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    LOW CAPACITANCE BJT Search Results

    LOW CAPACITANCE BJT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3RM28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 300 mA, DFN4C Visit Toshiba Electronic Devices & Storage Corporation

    LOW CAPACITANCE BJT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MYXB21200-20GAB

    Abstract: silicon carbide
    Text: SiC Power BJT Double 1200 Volt 20 Amp Hermetic MYXB21200-20GAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • Two devices in one hermetic package. • High blocking voltage with low R on • High voltage 1200V isolation in a small package


    Original     		PDF MYXB21200-20GAB 210OC Double1200 MYXB21200-20GAB silicon carbide

    transistor on 4409

    Abstract: NEC k 3654 PIN CONNECTIONS OF IC 4047 NE687 S21E UPA861TD UPA861TD-T3 Transistor NEC K 3654
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS


    Original     		PDF UPA861TD NE894 NE687 transistor on 4409 NEC k 3654 PIN CONNECTIONS OF IC 4047 S21E UPA861TD-T3 Transistor NEC K 3654

    NE687

    Abstract: S21E UPA861TD UPA861TD-T3 vaf meter transistor on 4409
    Text: NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 1.0±0.05 0.8 +0.07 -0.05 6 B1 5 Q1 5 2 3 E2 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1


    Original     		PDF UPA861TD NE894 NE687 S21E UPA861TD-T3 vaf meter transistor on 4409

    NF024

    Abstract: transistor on 4409 Transistor NEC K 3654 NE687 S21E UPA861TD UPA861TD-T3-A 024BF
    Text: NEC's NPN SILICON RF TWIN TRANSISTOR FEATURES OUTLINE DIMENSIONS • LOW VOLTAGE, LOW CURRENT OPERATION • LOW CAPACITANCE FOR WIDE TUNING RANGE • SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm 0.8 +0.07 -0.05 C2 Q1 6 B1 5 2 E2 3 Q2 4 B2 PIN CONNECTIONS 1. Collector Q1


    Original     		PDF UPA861TD NE894 NE687 NF024 transistor on 4409 Transistor NEC K 3654 S21E UPA861TD-T3-A 024BF

    NX3008NBKMB

    Abstract: IP4303CX4 PCMF2DFN1
    Text: Safeguard sensitive ICs - Increase battery life - Save space With NXP key products as recommended in this brochure Interface / Function Description Product type Package NFC antenna protection 18 / 24 V Birectional low capacitance ESD protection diode PESD18VF1BL


    Original     		PDF PESD18VF1BL PESD24VF1BL PESD18VF1BSF PESD24VF1BSF DFN1006 DSN0603 DFN2520 DFN4020 NX3008NBKMB IP4303CX4 PCMF2DFN1

    supercapacitor

    Abstract: ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100
    Text: CAP-XX APPLICATION NOTE No. 1004 Driving High-Power White LED Flash in Camera Phones Outline Supercapacitors with low ESR Equivalent Series Resistance and high capacitance are ideal components for use in pulsed-power applications, such as Flash LEDs and GPRS transmitters,


    Original     		PDF AN1004 31-May-2005 supercapacitor ZXT13N50DE6 supercap CAPACITOR 394J GS206 ZXM64NO2X balancing circuit for supercapacitor supercapacitor alternative to battery flash led circuit diagram ZXSC100

    "CHAPTER 1 Introduction to Power Semiconductors"

    Abstract: CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt
    Text: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is off and a high collector voltage is applied, the electric field between base and collector causes depletion of this N- region and turns it into an insulator. The voltage


    Original     		PDF AN-2337 DS-1423) AN-2497) AN-2337-0904 07-Apr-2009 "CHAPTER 1 Introduction to Power Semiconductors" CHAPTER 1 Introduction to Power Semiconductors APPCHP1 common emitter bjt application and circuit "Power Semiconductor Applications" Philips BJT with V-I characteristics BJT characteristics common emitter bjt Bipolar Junction Transistor Low Capacitance bjt

    DMOSFET

    Abstract: ZCP0545A
    Text: P-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCP0545A ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . MAX. This IGBT combines the high input impedance of the DMOSFET with the high current density of the BJT. PARAMETER SYMBOL MIN. UNIT CONDITIONS.


    Original     		PDF ZCP0545A DMOSFET ZCP0545A

    SIT Static Induction Transistor

    Abstract: create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier
    Text: Order this document by AN1529/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1529 RF Power Circuit Concepts Using FETs and BJTs Prepared by: H. O. Granberg Principal Staff Engineer Motorola Semiconductor Products Sector Phoenix, Arizona Similarities and differences in RF power circuits using silicon Field Effect Transistors and Bipolar Junction Transistors are discussed along with their characteristics and performance. The discussion is limited to amplifiers and multipliers. Oscillators are usually designed for low signal levels, which are then amplified. Although power oscillators are


    Original     		PDF AN1529/D AN1529 AN1529/D* SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages all mosfet vhf power amplifier narrow band rf POWER BJTs mrf154 amplifier bjt ce amplifier

    IGBT/MOSFET Gate Drive

    Abstract: IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging
    Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note IGBT/MOSFET Gate Drive Optocoupler INTRODUCTION TO IGBT The Insulated Gate Bipolar transistor IGBT is a cross between a MOSFET (metal oxide semiconductor field effect transistor) and a BJT (bipolar junction transistor) since it


    Original     		PDF 20-May-09 IGBT/MOSFET Gate Drive IGBT PNP power BJT anti saturation diode Gate Drive Optocoupler optocoupler drive relay IGBT gate drive for a boost converter IGBT gate driver ic high side MOSFET driver optocoupler IGBT cross igbt dc to dc converter capacitor charging

    Drive Base BJT

    Abstract: Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576
    Text: Testing Key Parameters of High Voltage BJTs for RDFC Applications Application Note AN-2576 INTRODUCTION Certain primary switch BJT parameters are particularly important for correct operation and longterm reliability of RDFC designs. : • Current gain hFE


    Original     		PDF AN-2576 AN-2337 AN-2576-0809A 25-Sep-2008 Drive Base BJT Low Capacitance bjt Transistor BJT High Current bjt specifications bjt high voltage Cambridge capacitor capacitors power BJT TRANSISTORS BJT list AN-2337 AN2576

    Logic Level Gate Drive mosfet

    Abstract: BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-000 Logic Level Gate Drive mosfet BJT IC Vce BJT pnp 45V mosfet 400 V 10A bjt 50a BJT IC Vce 5v

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-001

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-002

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and 8 board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001

    Untitled

    Abstract: No abstract text available
    Text: SUM201MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM201MN KSD-T6T002-000

    Untitled

    Abstract: No abstract text available
    Text: SUM202MN P-Channel MOSFET + PNP BJT Integrated Power MOSFET with PNP Low VCE sat Switching Transistor DFN-8 8 This integrated device represents a new level of safety and board−space reduction by combining the 20V P−Channel FET with a 1 PNP Silicon Low VCE(sat) switching transistor. This newly integrated


    Original     		PDF SUM202MN KSD-T6T001-001

    bjt specifications

    Abstract: TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor
    Text: Power BJT Specification for RDFC Applications Application Note AN-2276 RDFC Circuit Description ABSTRACT This application note provides key parametric requirements of power BJTs suitable for Resonant Discontinuous Forward Converter RDFC applications. As the main power switch, the BJT


    Original     		PDF AN-2276 AN-2276-0904 07-Apr-2009 bjt specifications TRANSISTORS BJT list DG-2128 DG2128 POWER BJTs common base bjt DS-1639 CAMSEMI common emitter bjt TRANSISTOR REPLACEMENT table for transistor

    NUS5531MT

    Abstract: No abstract text available
    Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and


    Original     		PDF NUS5531MT NUS5531MT/D NUS5531MT

    Transistor BJT 547 b

    Abstract: 120E2 BJT 12 NUS5531MTR2G NUS5531MT
    Text: NUS5531MT Main Switch Power MOSFET and Single Charging BJT −12 V, −6.2 A, Single P−Channel FET with Single PNP low Vce sat Transistor, 3x3 mm WDFN Package This device integrates one high performance power MOSFET and one low Vce(sat) transistor, greatly reducing the layout space and


    Original     		PDF NUS5531MT NUS5531MT/D Transistor BJT 547 b 120E2 BJT 12 NUS5531MTR2G NUS5531MT

    NUS3116MT

    Abstract: No abstract text available
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D NUS3116MT

    AYWW marking code IC

    Abstract: NUS3116MT NUS3116MTR2G OF BJT 547
    Text: NUS3116MT Main Switch Power MOSFET and Dual Charging BJT -12 V, -6.2 A, mCoolE Single P-Channel with Dual PNP low Vce sat Transistors, 3x3Ămm WDFN Package This device integrates one high performance power MOSFET and two low Vce(sat) transistors, greatly reducing the layout space and


    Original     		PDF NUS3116MT NUS3116MT/D AYWW marking code IC NUS3116MT NUS3116MTR2G OF BJT 547

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL IGBT ZCN0545A ISSUE 2 - MAY 94 This IG BT com b in e s th e high in p u t im p e d a n c e of th e D M O S F E T w ith th e high c u rre n t d en sity o f th e BJT. FEATURES * Extrem ely low on state voltage * No need to derate for higher tem peratures


    OCR Scan     		PDF ZCN0545A 300ns.

    Untitled

    Abstract: No abstract text available
    Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees


    OCR Scan     		PDF HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi