LOW NOISE TRANSISTORS FOR MICROWAVE Search Results

LOW NOISE TRANSISTORS FOR MICROWAVE Result Highlights (5)

Part	Manufacturer	Description
NFMJMPC156R0G3D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFM31PC276D0E3L	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
NFMJMPL226R0G5D	Murata Manufacturing Co Ltd	Large Current 3 Terminals Low ESL Chip Multilayer Ceramic Capacitors (EMI Filter) for General Purpose
GCM188D70E226ME36D	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for Automotive
GRM022C71A472KE19L	Murata Manufacturing Co Ltd	Chip Multilayer Ceramic Capacitors for General Purpose

LOW NOISE TRANSISTORS FOR MICROWAVE Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MMBR911LT1 RF & MICROWAVE TRANSISTORS DESCRIPTION KEY FEATURES ! High FTau-6.0 GHz EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, visit: http://www.advancedpower.com	Original	MMBR911LT1 MMBR911LT1 OT-23 MMBR911MLT1	PDF
Untitled Abstract: No abstract text available Text: BFR92ALT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-3.0dB@500MHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	BFR92ALT1 BFR92ALT1 500MHz	PDF
Untitled Abstract: No abstract text available Text: MMBR911LT1 RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MMBR911LT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. ! Low noise-2.9dB@1GHz ! Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	MMBR911LT1 MMBR911LT1 MMBR911MLT1	PDF
Untitled Abstract: No abstract text available Text: BFR92ALT1 RF & MICROWAVE TRANSISTORS RF PRODUCTS DIVISION DESCRIPTION KEY FEATURES E PR The BFR92ALT1 is a low noise, high gain, discrete silicon bipolar transistors housed in low cost plastic packages. Low noise-3.0dB@500MHz Low cost SOT23 package IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	BFR92ALT1 BFR92ALT1 500MHz	PDF
26-13 transistor sot-23 Abstract: micro X Silicon Bipolar Transistor Micro-X Ceramic Text: Low Operating Voltage, High fT Bipolar Microwave Transistors MA4T6365XX Series Features MA4T636535 • Designed for Battery Operation Micro -X • fT to 10 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic and Surface Mount Packages	OCR Scan	MA4T6365XX MA4T636535 MA4T636539 OT-143 26-13 transistor sot-23 micro X Silicon Bipolar Transistor Micro-X Ceramic	PDF
MA4T636533 Abstract: transistor sot-23 2613 MA4T6365 Text: Low Operating Voltage, High FT Bipolar Microwave Transistors MA4T6365 V2.00 Case Styles Features ● ● ● ● ● ● Designed for Battery Operation fT to 10 GHz Low Voltage Oscillator and Amplifier Low Phase Noise and Noise Figure Hermetic and Surface Mount Packages and	Original	MA4T6365 MA4T6365 OT-143 MA4T636539 MA4T636533 transistor sot-23 2613	PDF
power 22E Abstract: micro-x micro-x mhz ghz microwave MPSIG001 S21E S22E Text: M-Pulse Microwave Low OperatingVoltage, High fT SiGe Microwave Transistors Features • Designed for Battery Operation • fT to 14 GHz • Low Voltage Oscillator and Amplifier • Low Phase Noise and Noise Figure • Hermetic Packaging and Die Available • Can be Screened to JANTX, JANTXV Equivalent Levels	Original	MPSIG001 MPSIG001 MPSIG001-535) MPSIG001-535 power 22E micro-x micro-x mhz ghz microwave S21E S22E	PDF
MP4T6365 Abstract: Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23 Text: Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable	Original	MP4T6365 MP4T6365 OT-143 MP4T636539 Bipolar Transistor MP4T636535 MP4T636539 S21E S22E MA4T636533 MP4T636500 MP4T636533 26-13 transistor sot-23	PDF
NTE2402 Abstract: No abstract text available Text: NTE2402 NPN & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices also have excellent wideband properties and low noise up to high frequencies.	Original	NTE2402 NTE2403 500MHz, 25MHz NTE2402	PDF
PNP 2GHz LNA Abstract: mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz MC1333 ms1649 MCE545 transistor 5ghz pnp MRF630 Text: MC1333 WAFFLE PACK DIE RF PRODUCTS RF & MICROWAVE TRANSISTORS DIVISION DESCRIPTION KEY FEATURES EL PR The MC1333 is a low noise, high gain, discrete silicon bipolar transistor, shipped in waffle pack. ! Low noise-2.5dB@500MHz ! Gold Back Metal IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com	Original	MC1333 500MHz SD1127/MRF237 MS1649/MRF630 MRF837/MRF8372 MRF559 400mA 200mA PNP 2GHz LNA mce544 bfr96 equivalent TRANSISTOR NPN 5GHz TRANSISTOR PNP 5GHz ms1649 MCE545 transistor 5ghz pnp MRF630	PDF
Untitled Abstract: No abstract text available Text: I^E.U <^£.m.i.-L,onaucboi l/-\oauc£i, Line. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 Line MRF571 MRF572 MRFC572 NPN SILICON HIGH FREQUENCY TRANSISTORS . designed for low-noise, wide dynamic range front end amplifiers, low-noise VCO's, and microwave power multipliers.	Original	MRF571 MRF572 MRFC572 MRF572	PDF
MP4T3243 Abstract: Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303 Text: Bipolar High fT Low Voltage NPN Silicon Transistors MP4T3243 Series V4.00 Case Style Features • Designed for 3-5 Volt Operation • Useable to 6 GHz in Oscillators • Useable for Low Noise, Low Voltage Driver Amplifiers Through 3 GHz • Useful for Class C Amplifiers	Original	MP4T3243 OT-23 MP4T324335 Bipolar Transistor NPN bipolar junction transistors max hfe 2000 MP4T324300 mag710 MP4T324333 MP4T324335 S21E S22E sot23 1303	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BFR93ALT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon HighĆFrequency Transistors BFR93ALT1 . . . designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface	Original	BFR93ALT1/D BFR93ALT1	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by BFR92ALT1/D SEMICONDUCTOR TECHNICAL DATA T h e RF Line NPN Silicon High-Frequency Transistors BFR92ALT1 Designed primarily for use in high-gain, low-noise, small-signal UHF and microwave amplifiers constructed with thick and thin-film circuits using surface	OCR Scan	BFR92ALT1/D BFR92ALT1	PDF

CDQ0303-QS Abstract: CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS October 2007 - Rev 22-Oct-07 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain:	Original	CDQ0303-QS 22-Oct-07 CDQ0303-QS CDQ0303-QS-0G00 CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0	PDF
NE46134-T1 Abstract: No abstract text available Text: NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION The NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high	Original	NE46100 NE46134 NE46134 NE461 NE46100, OT-89) NE46134-T1	PDF
celeritek LNA Abstract: microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS CDQ0303-QS-0G00 Coil Craft 104 Text: 500-6000 MHz Dual, Ultra Low Noise, High IP3 Amplifier CDQ0303-QS May 2006 - Rev 24-May-06 Features Matched Pair of Transistors for Optimum Balanced Amplifier Design AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor pHEMT High Gain: 25 dB @ 900 MHz	Original	CDQ0303-QS 24-May-06 CDQ0303-QS celeritek LNA microwave transducer Tower Mounted Amplifiers Dual Band CDQ0303-QS-0G0T MCH185A101JK PB-CDQ0303-QS-00A0 PB-CDQ0303-QS-00B0 CDQ0303-QS-0G00 Coil Craft 104	PDF
4202 BD TRANSISTOR Abstract: lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853 Text: CDQ0303-QS 500 MHz to 6000 MHz Dual, Ultra Low-Noise, High IP3 Amplifier Advanced Product Information May 2005 V1.0 1 of 18 Features ❏ Matched Pair of Transistors for Optimum Ballanced Amplifier Design ❏ AlGaAs/InGaAs/AlGaAs pseudomorphic High Electron Mobility Transistor (pHEMT)	Original	CDQ0303-QS 4202 BD TRANSISTOR lg 8993 f 4556 TRANSISTOR BD 137-10 C 5478 transistor 329 9148 f 9582 dc bd 8050 TRANSISTOR QFN 5853	PDF
MA4TF50 Abstract: MA4TF5005 RS 434 071 x-band transistor transistor mesfet Text: General Purpose 0.5 µm N-Type GaAs MESFET Transistors MA4TF50 Series V3.00 Case Styles Features ● ● ● ● ● Low Noise Figure High Associated Gain High Maximum Available Gain Designed for Battery Operation Useful to Ku-Band Description The MA4TF50 is an n-type GaAs depletion mode Metal	Original	MA4TF50 MA4TF5005, MA4TF5000, MA4TF5005 MA4TF5005 RS 434 071 x-band transistor transistor mesfet	PDF
MA4T64500 Abstract: 4558 MA4T64535 557 sot143 micro X Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low Noise Microwave Transistors M A 4T64500 Series Features • fT to 9 GHz MA4T64535 Micro-X Low Noise Figure I •High Associated Gain ■Hermetic and Surface Mount Packages Available + ■Can be Screened to JANTX, JANTXV	OCR Scan	4T64500 MA4T64533 MA4T64535 OT-23 MA4T64539 OT-143 MA4T645XX OT-143) MA4T64500 4558 MA4T64535 557 sot143 micro X	PDF
MP42001 Abstract: low noise transistors for microwave S22E MP4200100 MP4200135 MP42001-509 S21E low noise transistors microwave Text: Silicon Bipolar Low Noise Microwave Transistors MP42001 Case Styles Features • Low Noise Figure .8dB Typical @ 60 MHz • Large Dynamic Range (+25dBm @ 1Db Compression Point) • Gold Metalization • Hermetic and Surface Mount Packages Available • Can be Screened to JANTX, JANTXV Equivalent Levels	Original	MP42001 25dBm MP42001 low noise transistors for microwave S22E MP4200100 MP4200135 MP42001-509 S21E low noise transistors microwave	PDF
MP4T645 Abstract: Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E Text: Silicon Bipolar High fT Low Noise Microwave Transistors MP4T645 Case Styles Features •fT to 9 GHz •Low Noise Figure •High Associated Gain •Hermetic and Surface Mount Packages Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els •Industry Standard	Original	MP4T645 MP4T645 MP4T64535) MP4T64539 OT-143 Bipolar Transistor NPN/transistor C 331 MP4T64533 4558 same match other ic MP4T64500 MP4T64535 MP4T64539 S21E S22E	PDF
MA4T64400 Abstract: low noise transistors MA4T645 MA4T644 Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t	OCR Scan	A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644	PDF
m-pulse tunnel diode Abstract: Mp2407 MP4033 MP2923 M-PULSE Text: Microwave Table of Contents DIODES Mircowave Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Zero bias Schottky Diodes . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original		PDF

LOW NOISE TRANSISTORS FOR MICROWAVE Search Results

LOW NOISE TRANSISTORS FOR MICROWAVE Result Highlights (5)

LOW NOISE TRANSISTORS FOR MICROWAVE Datasheets Context Search

Untitled

Untitled

Untitled

Untitled

26-13 transistor sot-23

MA4T636533

power 22E

MP4T6365

NTE2402

PNP 2GHz LNA

Untitled

MP4T3243

Untitled

Untitled

CDQ0303-QS

NE46134-T1

celeritek LNA

4202 BD TRANSISTOR

MA4TF50

MA4T64500

MP42001

MP4T645

MA4T64400

m-pulse tunnel diode