1N4148
Abstract: 5102ALPRP lpt port 1N4148 SPACE POWER ELECTRONICS INC
Text: SPACE ELECTRONICS INC. 16-BIT, 20 KHZ A/D CONVERTER SPACE PRODUCTS +VDIG 1 5102ALPRP 44 +VANLOG DGND AGND -VDIG -VANLOG -VDIG SLEEP RST SLEEP HOLD BP/UP CODE TRK1 SSH/SDL CRS/FIN TRK2 SDATA SCKMOD CLKIN LPTSTATUS XOUT +VANLOG STBY AIN2 CLKIN DGND -VANLOG XOUT
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16-BIT,
5102ALPRP
16-Bit
00Rev2
1N4148
5102ALPRP
lpt port
1N4148 SPACE POWER ELECTRONICS INC
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PDF
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rsj-300
Abstract: rsj-300n10
Text: Data Sheet 4V Drive Nch MOSFET RSJ300N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application
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RSJ300N10
RSJ300N10
Pw10s,
R1120A
rsj-300
rsj-300n10
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
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R5019ANJ
R5019ANJ
R1120A
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rcj450
Abstract: rcj450N20
Text: RCJ450N20 Data Sheet 10V Drive Nch MOSFET RCJ450N20 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
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RCJ450N20
RCJ450N20
Pw10st
R1120A
rcj450
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PDF
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rcj330
Abstract: RL76 RCJ330N25
Text: RCJ330N25 Data Sheet 10V Drive Nch MOSFET RCJ330N25 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 13.1 9.0 1.3 1.24 2.54 0.78 2.7 5.08 (1) (2) 0.4 1.2 3.0 1.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage
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RCJ330N25
R1120A
rcj330
RL76
RCJ330N25
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PDF
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Untitled
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET R6012ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 9.0 7.25 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R6012ANJ
R0039A
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PDF
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Untitled
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET R5016ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) Base (Gate) (1) (2) 1.2 3.0 1.0 1.24 2.54 (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions
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R5016ANJ
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PDF
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Untitled
Abstract: No abstract text available
Text: R5021ANJ Nch 500V 21A Power MOSFET Datasheet lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5021ANJ
SC-83)
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: R6008FNJ Datasheet Nch 600V 8A Power MOSFET lOutline VDSS 600V RDS on (Max.) 0.95W ID 8A PD 50W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R6008FNJ
SC-83)
R1120A
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PDF
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R5021ANJ
Abstract: No abstract text available
Text: R5021ANJ R5021ANJ Datasheet Nch 500V 21A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.22W ID 21A PD 100W (2) LPTS (SC-83) (1) lFeatures (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5021ANJ
SC-83)
R1120A
R5021ANJ
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch MOSFET RSJ10HN06 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) High power Package 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2
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RSJ10HN06
R1120A
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PDF
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LPT 26 pin to 39
Abstract: 9240LP adc lpt
Text: 9240LP 14-Bit, 10 MSPS Monolithic A/D Converter with LPT ASIC BIT 2 BIT 1 OTC NC NC AVDD AVSS NC SENSE Vref REFCOM BIT 3 NC BIAS CAPB CAPT NC CML LPTref 9240LP BIT 10 BIT 11 BIT 12 BIT 13 NC BIT 14 LPTSTATUS LPTBIT DRVDD CLK Memory AVDD NC . DVSS AVSS DVDD
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9240LP
14-Bit,
Signal-to-noise02
10MSPS
LPT 26 pin to 39
9240LP
adc lpt
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PDF
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Untitled
Abstract: No abstract text available
Text: R5016ANJ Transistors 10V Drive Nch MOSFET R5016ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 1.3 13.1 9.0 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS)
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R5016ANJ
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lpts
Abstract: No abstract text available
Text: RSJ151P10 Datasheet Pch 100V 15A Power MOSFET lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures LPTS (SC-83) (1) (2) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.
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RSJ151P10
-100V
120mW
SC-83)
R1102A
lpts
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PDF
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C458C
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET R5011ANJ zDimensions Unit : mm zStructure Silicon N-channel MOSFET LPTS 10.1 4.5 1.24 2.54 0.4 0.78 2.7 5.08 (1) Gate (2) Drain (3) Source 1.2 3.0 1.0 13.1 zFeatures 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be ±30V.
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R5011ANJ
R0039A
C458C
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PDF
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Untitled
Abstract: No abstract text available
Text: 10V Drive Nch MOSFET R5009ANJ Dimensions Unit : mm Structure Silicon N-channel MOSFET LPTS 10.1 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 2.54 (1) Base (Gate) (3) (2) Collector (Drain) (3) Emitter (Source) Applications Switching Each lead has same dimensions
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R5009ANJ
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RSJ151P10
Abstract: No abstract text available
Text: RSJ151P10 Pch 100V 15A Power MOSFET Datasheet lOutline VDSS -100V RDS on (Max.) 120mW ID -15A PD 50W lFeatures (2) LPTS (SC-83) (1) (3) lInner circuit (3) 1) Low on-resistance. *1 (1) Gate (2) Source (3) Drain 2) Fast switching speed. 3) Drive circuits can be simple.
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RSJ151P10
-100V
120mW
SC-83)
R1120A
RSJ151P10
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET RSJ450N04 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High current 3) High power Package 4.5 3.0 1.0 1.24 0.4 0.78 2.7 5.08 (1) (2) 1.2 2.54 (3)
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RSJ450N04
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: R5019ANJ Data Sheet 10V Drive Nch MOSFET R5019ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
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R5019ANJ
R5019ANJ
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: R5013ANJ Datasheet Nch 500V 13A Power MOSFET lOutline VDSS 500V RDS on (Max.) 0.38W ID 13A PD 100W LPTS (SC-83) (2) (1) (3) lFeatures lInner circuit 1) Low on-resistance. 2) Fast switching speed. (1) Gate (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V.
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R5013ANJ
SC-83)
R1120A
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PDF
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RSJ250P
Abstract: RSJ250P10 rsj250
Text: Data Sheet 4V Drive Pch MOSFET RSJ250P10 Structure Silicon P-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3) Application
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Original
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RSJ250P10
RSJ250P10
PW10s,
R1120A
RSJ250P
rsj250
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R5021ANJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) Fast switching speed. 3) Gate-source voltage (VGSS) garanteed to be ±30V . 4.5 3.0 1.0 1.24
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R5021ANJ
R5021ANJ
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 10V Drive Nch MOSFET R5005CNJ Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High-speed switching. 3) Wide range of SOA. 4) Drive circuits can be simple. 5) Parallel use is easy.
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R5005CNJ
R5005CNJ
R1120A
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PDF
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Untitled
Abstract: No abstract text available
Text: Data Sheet 4V Drive Nch MOSFET RSJ550N10 Structure Silicon N-channel MOSFET Dimensions Unit : mm LPTS 10.1 1.3 13.1 9.0 Features 1) Low on-resistance. 2) High Power Package. 3) 4V drive. 4.5 2.54 0.4 0.78 2.7 5.08 (1) (2) 1.2 3.0 1.0 1.24 (3)
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RSJ550N10
R1120A
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