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    Infineon Technologies AG TLS203B0EJV33XUMA1

    IC REG LIN 3.3V 300MA 8DSO E-PAD
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    DigiKey TLS203B0EJV33XUMA1 Digi-Reel 4,158 1
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    Mouser Electronics TLS203B0EJV33XUMA1 7,661
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    Infineon Technologies AG TLS203B0EJV50XUMA1

    IC REG LIN 5V 300MA 8DSO E-PAD
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    DigiKey TLS203B0EJV50XUMA1 Digi-Reel 4,128 1
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    Mouser Electronics TLS203B0EJV50XUMA1 11,367
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    Win Source Electronics TLS203B0EJV50XUMA1 17,125
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    Infineon Technologies AG TLS203B0EJVXUMA1

    IC REG LIN POS ADJ 300MA 8DSO
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    DigiKey TLS203B0EJVXUMA1 Cut Tape 2,200 1
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    Mouser Electronics TLS203B0EJVXUMA1 2,440
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    Rochester Electronics TLS203B0EJVXUMA1 1
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    TME TLS203B0EJVXUMA1 1
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    Taiwan Semiconductor DBLS203G

    BRIDGE RECT 1PHASE 200V 2A DBLS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey DBLS203G Cut Tape 1,468 1
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    Test Products Inc TLS2030

    TEST LEAD SET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TLS2030 Box 3 1
    • 1 $137.82
    • 10 $137.82
    • 100 $123.0566
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    LS203 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LS203N Lovoltech High Performance N-Ch Vertical Power JFET Transistor Original PDF

    LS203 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    lovoltech

    Abstract: jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980
    Text: www.Lovoltech.com PWRLITE-LS203N High Performance N-Ch Vertical Power JFET Transistor “No Body Diode” transistor replaces 2 MOSFETs devices with 1 JFET Low Rdson to improve efficiencies Low drop-out for longer time operations per charge Very low leakage in off conditions


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    PDF PWRLITE-LS203N lovoltech jfet transistor vertical JFET LS203N S203N TRANSISTOR a 1980

    808 nm 100 mw

    Abstract: PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm
    Text: INFRARED LASER DIODE DL-LS2032 Tentative Ver.1 Jan. 2003 Package Features Tolerance : ± 0.2 Unit : mm ø5.6 - 0.03 ø4.4 • Lasing wavelength : 808 nm (Typ.) • Single longitudinal mode • High output power : 100 mW at 50°C • Low threshold current : Ith = 40 mA (Typ.)


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    PDF DL-LS2032 100mW DL-LS2032A DL-LS2032B DL-LS2032C 808 nm 100 mw PD-LD SANYO DL DL-LS2032 DL-LS2032A DL-LS2032B DL-LS2032C CW laser diode 808 nm

    LS2074

    Abstract: iso 7816-2 7312 LS-207
    Text: 4 5 8 8 SECTION 12 A-A .3 0.61 0.07 1 2.4 0.05 0.8 0.1 6 0.9 0.05 7312P0035A13LF 7 9 7 LEAD FREE CATALOGUE NUMBER A 6 SECTION A-A SCALE 10:1 A R0 3 2 0.6 0.05 1 10 3.94 11 2-0.1 2x 1.2 13 0.14 44.45 4 4.3 (1.8 ) 5 15 3 B 0.01 +0.1 2 20.32 B 14 21 20 DESCRIPTION


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    PDF 7312P0035A13LF 1000MOhms I09-0239 7312P0035A13 VJW53663 LS2074 iso 7816-2 7312 LS-207

    T305

    Abstract: dissipator C795 C795CA C795CB C795CP C795LN C795LT SF1154
    Text: C795 100mm THYRIST OR PRESSP THYRISTOR PRESSPA AK 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy


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    PDF 100mm SF1154 DC550 G322L T305 dissipator C795 C795CA C795CB C795CP C795LN C795LT

    Legrand switch

    Abstract: Legrand VJW53665 ISO 1302 LS06-0206 LS2030 7312P iso 1101 02N05
    Text: 0.8 3.6 6 7 2-0.1 2x 8 SECTION A-A SCALE 10:1 A 4.3 (1.2 ) 20.32 0.14 (1.8 ) 3.94 B 12.8 20 A 13.9 DESCRIPTION Connector especially designed for SMT technology EMV compatible and in accordance with ISO 7816-2 STOP CARD MECHANICAL Contacts force : between 0.2N-0.5N


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    PDF 7312P0235A13LF 1000MOhms 100mOhms I09-0239 16cts 7312P0235A13 VJW53665 Legrand switch Legrand VJW53665 ISO 1302 LS06-0206 LS2030 7312P iso 1101 02N05

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    PDF LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565

    SF-1154

    Abstract: SF1154 dissipator presspak diode C795 C795CA C795CB C795CP C795LN C795LT
    Text: C795 100mm THYRISTOR PRESSPAK 3200V / 3800A SPCO Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy


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    PDF 100mm 125oC SF1154 DC550 G322L SF-1154 dissipator presspak diode C795 C795CA C795CB C795CP C795LN C795LT

    alcoa electrical joint compound

    Abstract: SF1154 dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD
    Text: A800 77mm RECTIFIER DIODE 2600V / 4400A SPCO The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF 185oC -40oC A800Lerford LS2037 SF1154 DC550 G322L alcoa electrical joint compound dissipator presspak diode A800 A800L A800LA A800LB G322L A800LD

    Untitled

    Abstract: No abstract text available
    Text: C795 100mm THYRIST AK OR PRESSP PRESSPA THYRISTOR 3200V / 3800A Type C795 thyristor is suitable for phase control applications such as high voltage valves used on static Var compensators and thyristor controlled series compensation. It is especially optimized to handle frequently applied heavy


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    PDF 100mm SF1154 DC550 G322L

    LS2038

    Abstract: VJW53664
    Text: 4 5 37 34 35 2-0.1 2x 4.3 0.14 44.45 26 B 20 A 38 36 1.2 39 20.32 32 30 (1.8 ) 10.2 0.1 6 .3 SECTION A-A SCALE 10:1 3.94 27 8 0.01 +0.1 0.8 0.1 7 33 0.9 0.05 0.61 0.07 28 A 31 0.6 0.05 29 6 R0 3 2 2.4 0.05 1 7312P002XA13LF 14.7 0.1 8 9 A B 40 Durability


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    PDF 7312P002XA13LF 1000MOhms 100mOhms I09-0239 7312P0025A13 VJW53664 LS2038 VJW53664

    Dow Corning 735

    Abstract: dow corning silicone compound alcoa electrical joint compound 2600 corning SF1154 dissipator Silicones dow corning 732 A801CA A801CB
    Text: A801 77mm RECTIFIER DIODE 3200V / 3900A SPCO The rectifier diode feature a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF LS2037 SF1154 DC550 G322L Dow Corning 735 dow corning silicone compound alcoa electrical joint compound 2600 corning dissipator Silicones dow corning 732 A801CA A801CB

    SF1154

    Abstract: DC550 alcoa electrical joint compound LS2037 dow corning 732 dissipator presspak C770 C770A Alcoa
    Text: INVERTER THYRISTOR C770 & C770A SPCO 77mm / 1800V / 60-80us Disc-type ceramic PRESSPAK package Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate


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    PDF C770A 60-80us C770A_ LS2037 SF1154 DC550 G322L alcoa electrical joint compound dow corning 732 dissipator presspak C770 C770A Alcoa

    SF1154

    Abstract: dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U
    Text: INVERTER THYRISTO R C770 & C770A 77mm / 1800V / 60-80us Type C770 reverse blocking thyristor is suitable for inverter applications.The silicon junction is manufactured by the proven multi-diffusion process and utilizes the exclusive involute gate structure.It is supplied in an industry accepted disc-type package , ready to mount using


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    PDF C770A 60-80us C770A_ LS2037 SF1154 DC550 G322L dow corning 732 dissipator C770 C770A Alcoa #2 Electrical Joint Compound alcoa electrical joint compound 60-80U

    SF1154

    Abstract: SF-1154
    Text: A800 77mm RECTIFIER DIODE 2600V / 4400A The A800 rectifier diode features a nominal 77mm silicon junction diameter design , manufactured by the proven multi-diffusion process. High reverse voltage blocking capability is optimized with moderate recovery current and low forward voltage.


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    PDF A800LM A800LE A800LD A800LC A800LB A800LA A800L A800PT A800PN LS2037 SF1154 SF-1154

    C601PN

    Abstract: scotchbrite C701PN diodes C441 C702 C440 C440E C440M C701PM C440S
    Text: PHASE CONTROL SCR's 2 7 6 .1 27 6 940 TO 1950 AMPERES GE TYPE ELECTRICAL SPECIFICATIONS VOLTAGE RANGE FORWARD CONDUCTION •t R M S . T (A V ) , T{ A V ) . TSM ,2. 11 y TM R Max. average on-state current @ 180° conduction (A) @ T q Max. average on*state current fo r 3^


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    7431E022580

    Abstract: 7431E0225S01LF VJW54076 VXX2760
    Text: 4 PART NUMBER LEAD FREE VERSION 7 4 3 1E0 2 2 5 S 0 7 4 3 1 E0 2 2 5 S0 1LE c y/ jL u ¥ c \ =• A 5 5 . 9 +r GENERAL : LO X . 6X0 is I O - J In s u I a t o n r e s i s t a n <: e D i e l e c t r i c w i t h s ta ndi n g vo Cur e nt ca r r y ng ► X L + 0.3


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    PDF 7431E022580 7431E0225S01LF r20307 VXX2760 VJW54076 7431E0225S01LF VJW54076 VXX2760

    C501

    Abstract: C501N C501P C501PA C501PB C501PC C501PD C501PE C501S C501T
    Text: SCR C501 550 A Avg. up to 1800 V AM PLIFYING GATE The C501 Series o f high power devices feature the proven, multi-diffused construction in a new, larger, pressure-mounted package. FEATURES: • • • • • • • Short Delay Time Pressure Contacts Glazed Ceramic Package w ith 1" Creepage Path


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    PDF SF1154 SF1154, G322L LS2037 G322L, C501 C501N C501P C501PA C501PB C501PC C501PD C501PE C501S C501T

    powec rm 1110

    Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
    Text: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor


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    PDF 111ii MZ5558 Z5555, Z5556, MZ5557 powec rm 1110 rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor

    FN 1016

    Abstract: SCR 800V 50A C613 C613L C613PE C613PM C613PN C613PS C613PT RS-397
    Text: INVERTER SCR's SELECTOR GUIDE 2000 1900 1000 1700, 1600 1500 1400 1300 i/i 5 1200 § J> Iioo 9 z 5 1000 (E g 900 g 800 < 700 600 500 tf IO 400 u V * 300 IO fO o <0 ro o * tO fO o 200 100 25 35 63 MO 225 275 300 4 0 0 500 R M S C U R R E N T -A M P E R E S


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    PDF SF1154 SF1154, G322L LS2037 G322L, FN 1016 SCR 800V 50A C613 C613L C613PE C613PM C613PN C613PS C613PT RS-397

    alcoa electrical joint compound

    Abstract: c180 scr C180PC C501 C180 C380 C380A C380B alcoa electrical joint compound #2 C380D
    Text: PHASE CONTROL SCR's 110 235 TO 850 AMPERES | GETYPE C180 C380 C390 C391 C 501 C502 1 500-1300 100-1300 500-1 TDM *,wv 1300-1800 700 1700 1500-2000 1 735 850 550 @ 6 5 JC 500 @ 65°C 850 550 @65°C 550 @ 57°C 850 135 @ 80°C 380 235 /• 80°C 180 @ 80°C


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    PDF SF1154 SF1154, G322L LS2037 G322L, alcoa electrical joint compound c180 scr C180PC C501 C180 C380 C380A C380B alcoa electrical joint compound #2 C380D

    C701

    Abstract: c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC
    Text: G E CO/ S T A T I C GE-SPCO PtilR CMPNT 3Ô7HS04 DGGQCH? T H 6 E S P 34E D High Power 53mm Silicon Controlled Rectifier I A / V Static Power Component Operation Mah>emJ,A USA 300 T - 2 5 - 2 - 1 2000 PG 6.050A 9/1/88 C701 AM PLIFY IN G G A TE The C70J Reverse Blocking Thyristor now has extended voltage blocking


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    PDF 7HS04 SF1154, G322L LS2037 SFU54 G322L, C701 c701 scr 7377 AGT Thyristor dissipator C701PM C701PN C701PA C701PB C701PC

    alcoa electrical joint compound

    Abstract: ge 142 GE-SPCO presspak C792 C792EE C792EM C792EN C792ES C792ET
    Text: SbE D- E CO-. STATIC PUR CUPNT G g - S P C • 3Ô74SÔ4 DQGOObS fl ■ ~r~25~2-l C792 lOOmm THYRISTOR PRESSPAK 6000V12100A Q The GE type C792 thyristor is suitable forphase control applications such as forHVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second


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    PDF 100mm SF1154 0C550 G322L alcoa electrical joint compound ge 142 GE-SPCO presspak C792 C792EE C792EM C792EN C792ES C792ET

    SF1154

    Abstract: ge 142 G322L 12116 C793CM C793 C793CE C793CN C793CS C793CT
    Text: E CO-. S T A T I C PUR GE-SPCO CMPNT 2bE D I 30745Ô4 QQOQQb'ì S WÊ C793 T-25-ZI lOOmm THYRISTOR PRESSPAK 4000V /3400A The GE type C793 thyristor is suitable for phase control applications such as for HVDC valves,static VAR compensators and synchronous motor drives.The silicon junction design utilizes a second


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    PDF SF1154 DC550 G322L ll/30/88 ge 142 G322L 12116 C793CM C793 C793CE C793CN C793CS C793CT

    BURROUGHS nixie

    Abstract: SK-111-V BURROUGHS Burroughs Corporation ls203 nixi B9012 ScansUX851 SK-111H
    Text: BULLETIN NO. 1034A September 1,1963 READOUT DEVICES NUMERICAL INDICATOR Type B -9012 P IX IE P o s itio n In d ic a to r T u b e The B-9012 is a gas-filled, cold cathode, indicator tube. It contains ten glow positions or cathodes located 36° apart which


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    PDF B-9012 SK-111H SK-111-V BURROUGHS nixie BURROUGHS Burroughs Corporation ls203 nixi B9012 ScansUX851