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    LS303 Search Results

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    G800LS303010HR Amphenol Communications Solutions Pin Header 2.54mm Pitch STR DIP , 1x5Pin , 30u\\ Gold , LCP , 6.0mm*2.5mm*3.8mm , Color-Black , Halogen Free Visit Amphenol Communications Solutions
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    LS303 Price and Stock

    Infineon Technologies AG IRLS3034TRL7PP

    MOSFET N-CH 40V 240A D2PAK
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    Infineon Technologies AG IRLS3036TRL7PP

    MOSFET N-CH 60V 240A D2PAK
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    Diodes Incorporated DLS3035FGBQ-7

    MOSFET BVDSS: 25V~30V V-DFN3030-
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    Diodes Incorporated DLS3035FGBQ-7A

    MOSFET BVDSS: 25V~30V V-DFN3030-
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    Infineon Technologies AG IRLS3034TRLPBF

    MOSFET N-CH 40V 195A D2PAK
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    LS303 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LS303 Linear Integrated Systems HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTOR Original PDF
    LS303-51N Unknown LIQUID LEVEL SENSOR Original PDF

    LS303 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS FEATURES VERY HIGH GAIN hFE 2000 @ 1.0µA TYP. LOW OUTPUT CAPACITANCE COBO 2.0pF TIGHT VBE MATCHING IVBE1-VBE2I=0.2mV TYP. HIGH fT 100 MHz ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25 °C unless otherwise stated


    Original     		LS301 LS302 LS303 250mW 500mW LS301 LS302: LS303: 25-year-old, PDF

    ic 4042

    Abstract: LS301 LS302 LS303
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS301 LS302 LS303 100MHz 250mW 500mW LS302: LS303: ic 4042 LS301 LS302 LS303 PDF

    LS303

    Abstract: superbeta
    Text: LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single TO-78 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS303 superbeta PDF

    Untitled

    Abstract: No abstract text available
    Text: LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOT-23 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS303 LS303 OT-23 OT-23 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS301 LS302 LS303 100MHz 250mW 500mW LS301ithic PDF

    Untitled

    Abstract: No abstract text available
    Text: LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single SOIC package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS303 LS303 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single P-DIP package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS303 LS303 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS303 MONOLITHIC DUAL NPN TRANSISTOR Linear Systems High Voltage Super-Beta Monolithic Dual NPN The LS303 is a monolithic pair of high voltage SuperBeta NPN transistors mounted in a single TO-71 package. The monolithic dual chip design reduces parasitics and gives better performance while ensuring


    Original     		LS303 LS303 PDF

    J201 Replacement

    Abstract: 2N5019 "direct replacement"
    Text: IT124 SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES Direct Replacement for Intersil IT124 Pin for Pin Compatible C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 TA= 25°C unless otherwise noted IC Collector-Current Maximum Power Dissipation


    Original     		IT124 IT124 250mW 500mW J201 Replacement 2N5019 "direct replacement" PDF

    J201 spice

    Abstract: dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310
    Text: LS3250 SERIES MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES 6 LEAD SOT-23 SURFACE MOUNT PACKAGE* TIGHT MATCHING1 EXCELLENT THERMAL TRACKING 2mV 1 SOT-23 TOP VIEW 3µV/°C ABSOLUTE MAXIMUM RATINGS2 B1 E2 B2 @ 25 °C unless otherwise stated


    Original     		LS3250 OT-23 J201 spice dual P-Channel JFET sot23 2n4416 transistor spice LS3250A a7 surface mount diode J202 TRANSISTOR fet j310 PDF

    Ultra High Input Impedance N-Channel JFET Amplifier

    Abstract: "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23
    Text: LS421, LS422, LS423, LS424, LS425, LS426 LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES HIGH INPUT IMPEDANCE IG=0.25pA MAX HIGH GAIN gfs=120µmho MIN LOW POWER OPERATION VGS off =2V MAX ABSOLUTE MAXIMUM RATINGS NOTE 1


    Original     		LS421, LS422, LS423, LS424, LS425, LS426 400mW Ultra High Input Impedance N-Channel JFET Amplifier "DUAL N-Channel JFET" 2n3955 transistor spice TRANSISTOR a4 2n4416 transistor Vgs 40V mosfet dual Channel JFET sot23 PDF

    "DUAL N-Channel JFET"

    Abstract: Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A
    Text: LSK389 ULTRA LOW NOISE MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES ULTRA LOW NOISE TIGHT MATCHING HIGH BREAKDOWN VOLTAGE HIGH GAIN LOW CAPACITANCE en = 0.9nV/√Hz typ |VGS1-2| = 20mV max BVGSS = 40V max Yfs = 20mS (typ) 25pF typ TO-71


    Original     		LSK389 400mW 2SK389 "DUAL N-Channel JFET" Dual N-Channel JFET 2n4117a equivalent 2SK389 equivalent U405 JFET u404 spice LSK389B 2N4119A equivalent 3N165 equivalent LSK389A PDF

    "DUAL N-Channel JFET"

    Abstract: ultra low igss pA J176 equivalent
    Text: U/SST440,441 MONOLITHIC DUAL N-CHANNEL JFET Linear Integrated Systems FEATURES Direct Replacement for SILICONIX U/SST440 & U/SST441 HIGH CMRR CMRR ≥ 85dB LOW GATE LEAKAGE IGSS ≤ 1pA 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C unless otherwise stated Maximum Temperatures


    Original     		U/SST440 U/SST440 U/SST441 500mW "DUAL N-Channel JFET" ultra low igss pA J176 equivalent PDF

    FET U310

    Abstract: U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET
    Text: U/J/SST308 SERIES SINGLE N-CHANNEL HIGH FREQUENCY JFET Linear Integrated Systems FEATURES Direct Replacement For SILICONIX U/J/SST308 SERIES OUTSTANDING HIGH FREQUENCY GAIN Gpg = 11.5dB LOW HIGH FREQUENCY NOISE J SERIES NF = 2.7dB TO-92 BOTTOM VIEW TO-18 BOTTOM VIEW


    Original     		U/J/SST308 350mW 500mW OT-23 FET U310 U310 fet mosfet 2n4351 low noise low frequency JFET j174 LS312 equivalent N-CHANNEL LOW NOISE AMPLIFIER j177 equivalent transistor 10mA JFET PDF

    ultra low igss pA mosfet

    Abstract: n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel
    Text: LS4117, 4118, 4119 ULTRA-HIGH INPUT IMPEDANCE N-CHANNEL JFET Linear Integrated Systems FEATURES LOW POWER IDSS<90 µA 2N4117 MINIMUM CIRCUIT LOADING IGSS<1 pA (2N4117A Series) ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Gate-Source or Gate-Drain Voltage (NOTE 1)


    Original     		LS4117, 2N4117) 2N4117A 300mW 2N4117/A 2N4118 FN4117/A 2N4118A ultra low igss pA mosfet n-channel JFET sot23-6 Ultra High Input Impedance N-Channel JFET Amplifier N channel jfet 3N191 SPICE P-Channel Depletion Mode FET 2n4117 jfet jfet transistor 2n4391 U422 ultra low igss pA mosfet n channel PDF

    P-Channel Depletion Mode FET

    Abstract: 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor
    Text: 3N165, 3N166 MONOLITHIC DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted) Drain-Source or Drain-Gate Voltage (NOTE 2)


    Original     		3N165, 3N166 3N165 3N166 P-Channel Depletion Mode FET 2n3955 transistor spice TRANSISTOR 2n3955 J201 N-channel JFET to 90 dual P-Channel JFET jfet n channel ultra low noise low noise dual P-Channel JFET Ultra High Input Impedance N-Channel JFET Amplifier monolithic dual jfet transistor u402 transistor PDF

    N CHANNEL jfet Low Noise Audio Amplifier

    Abstract: diode ZENER A8 P-Channel Depletion Mosfets SST214 N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener sd214de ultra FAST DMOS FET Switches sst210 sot-143
    Text: SD-SST210/214 N-CHANNEL LATERAL DMOS SWITCH Linear Integrated Systems Product Summary Part Number V BR DS Min(V) VGS(th) Max (V) rDS(on) Max(Ω) Crss Max (pF) tON Max (ns) SD210DE 30 1.5 45 @ VGS = 10V 0.5 2 SD214DE 20 1.5 45 @ VGS = 10V 0.5 2 SST210 30 1.5


    Original     		SD-SST210/214 SD210DE SD214DE SST210 SST214 N CHANNEL jfet Low Noise Audio Amplifier diode ZENER A8 P-Channel Depletion Mosfets N CHANNEL jfet ultra Low Noise Audio Amplifier 2N4351 bare die zener ultra FAST DMOS FET Switches sst210 sot-143 PDF

    Current Regulator Diode

    Abstract: J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor
    Text: LS350 LS351 LS352 MONOLITHIC DUAL PNP TRANSISTORS Linear Integrated Systems FEATURES HIGH GAIN hFE ≥ 200 @ 10µA - 1mA TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 275MHz TYP. @ 1mA C1 C2 E1 ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C unless otherwise noted


    Original     		LS350 LS351 LS352 275MHz 250mW 500mW LS352 Current Regulator Diode J110 spice J502 "Dual npn Transistor" "Dual PNP Transistor" VCR11N J201 spice Dual PNP Transistor U402 N CHANNEL FET jfet differential transistor PDF

    SN54HC640

    Abstract: SN74HC640
    Text: SN54HC640, SN74HC640 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS S C LS303 - JA N U A R Y 1996 Inverting Logic High-Current 3-State Outputs Can Drive up to 15 LSTTL Loads SN54HC640 . . . J OR W PACKAGE SN74HC640 . . . DW OR N PACKAGE TOP VIEW Package Options Include Plastic


    OCR Scan     		SN54HC640, SN74HC640 SCLS303 300-mil SN54HC640 PDF

    LS303

    Abstract: No abstract text available
    Text: SN54HC640, SN74HC640 OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS _ SC LS303- JANUARY 1996 * • Î • Inverting Logic High-Current 3-State Outputs Can Drive up to 15 LSTTL Loads Package Options Include Plastic Small-Outllne DW and Ceramic Flat


    OCR Scan     		SN54HC640, SN74HC640 LS303- 300-mll SN54HC640 SN74HC640 LS303 PDF

    Untitled

    Abstract: No abstract text available
    Text: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS LINEAR SYSTEMS Linear integrated Systems FEATURES VERY HIGH GAIN hFE 2000 @ 1.0pA TYP. LOW OUTPUT CAPACITANCE ^O B O TIGHT V B£ MATCHING 2.0pF IV B E r V BE2 l = 0 -2 m V T Y P ' HIGH fT


    OCR Scan     		LS301 LS302 LS303 100MHz 250mW 500mW ForLS301 LS302: LS303: PDF

    Untitled

    Abstract: No abstract text available
    Text: LINEAR SYSTEMS LS301 LS3Q2 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEA TU RES V ER Y HIGH GAIN hFE 2000 @ 1.0pA TYP. LOW OUTPUT CA PACITA N CE C obo 2-°PF TIGHT V BE MATCHING I V B E r V B E 2 l = 0 -2 m V T Y P -


    OCR Scan     		LS301 LS303 100MHz 250mW 500mW LS301 LS302: LS303: PDF

    Untitled

    Abstract: No abstract text available
    Text: LS301 LINEAR SYSTEMS LS302 LS303 SUPER-BETA MONOLITHIC BPÄLNFN TRANSISTORS Linear Integrated Systems FEATURES. VERY HIGH GAIN hpE > 2000 @ I.OnATYP. LOW OUTPUT CAPACITANCE


    OCR Scan     		LS301 LS302 LS303 100MHz LS302: LS303: PDF

    ba 5412

    Abstract: LT 5251 4012 4341-11 display L5431 la 3041 la 5622-11 LS5631-13 LT 5252
    Text: LED DISPLAY ' SINGLE DIGIT AND OVERFLOW DIGIT HEIGHT EMITTING COL.OR DEVICE NUMBER c O U o •• 0 .3 " n o O 0 .3" LA c 3021-16 GREEN 1.65 LA(c)3031-16 YELLO W 1.6 LA(c)3041*16 ORANGE 1.8 G aP R E D 0.7 a/L H I-E FF. R E D 1.8 0 .4 " LA 3 0 1 1 -1 2 (LC3011-11)


    OCR Scan     		PDF