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    LT 2107 Search Results

    LT 2107 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R5F52107CDFK#30 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52107CDLJ#U0 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52107CDFF#V0 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52107CDFM#30 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
    R5F52107BGFB#10 Renesas Electronics Corporation High Performance, Low Power 32-bit Microcontrollers Supporting Large Capacity Memory Visit Renesas Electronics Corporation
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    LT 2107 Price and Stock

    Analog Devices Inc LTC2107IUK#PBF

    Analog to Digital Converters - ADC 16-B, 210Msps Hi Performance ADC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LTC2107IUK#PBF 104
    • 1 $216.02
    • 10 $182.89
    • 100 $182.89
    • 1000 $182.89
    • 10000 $182.89
    Buy Now

    Analog Devices Inc LTC2107CUK#PBF

    Analog to Digital Converters - ADC m6-B, 210Msps Hi Performance ADC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LTC2107CUK#PBF 46
    • 1 $186.85
    • 10 $160.38
    • 100 $159.05
    • 1000 $159.05
    • 10000 $159.05
    Buy Now

    Samtec Inc HTSW-121-07-L-T

    Headers & Wire Housings High Temperature PCB Header Strips, 0.100" pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics HTSW-121-07-L-T
    • 1 $4.23
    • 10 $4.23
    • 100 $3.61
    • 1000 $2.74
    • 10000 $2.5
    Get Quote

    Samtec Inc TSW-121-07-L-T

    Headers & Wire Housings Classic PCB Header Strips, 0.100" pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TSW-121-07-L-T
    • 1 $4.23
    • 10 $4.23
    • 100 $3.61
    • 1000 $2.74
    • 10000 $2.5
    Get Quote

    Samtec Inc TW-21-07-L-T-510-120

    Board to Board & Mezzanine Connectors Flexible Surface Mount Board Stacking Header, 2.00 mm Pitch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TW-21-07-L-T-510-120
    • 1 $9.14
    • 10 $8.74
    • 100 $6.54
    • 1000 $3.83
    • 10000 $2.94
    Get Quote

    LT 2107 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    PIC16F72 inverter ups

    Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
    Text: the solutions are out there you just haven’t registered yet. RoadTest the newest products in the market! View the latest news, design support and hot new technologies for a range of applications Join the RoadTest group and be in with a chance to trial exclusive new products for free. Plus, read


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    element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186 PDF

    LTC2314-14

    Abstract: 7803 3V 1A positive voltage regulator 1407A1 l 7803 3V Positive Voltage Regulator LTC5551 LTC6947 LTM2987 LT6236 LTC5577
    Text: May 2014 New Products Catalog High Performance Analog ICs LTC6947 Ultralow Noise and Spurious 0.35GHz to 6GHz Fractional-N Synthesizer LTM2987 16-Channel µModule PMBus Power System Manager LTC3128 3A Monolithic Buck-Boost Supercapacitor Charger and Balancer with Accurate Input Current Limit


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    LTC6947 35GHz LTM2987 16-Channel LTC3128 LT8301 42VIN LT8471 LT8620 LT6020/LT6020-1 LTC2314-14 7803 3V 1A positive voltage regulator 1407A1 l 7803 3V Positive Voltage Regulator LTC5551 LT6236 LTC5577 PDF

    STR G 8654

    Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
    Text: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: rev. page 1 of 10 date 08/2007 DESCRIPTION: point of load converter PART NUMBER: VPOL5A-5-SIP features * high efficiency topology, typically 94% at 3.3 Vdc * industry standard footprint * wide ambient temperature range, -40C to +85C * cost efficient open frame design


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    UL/IEC/EN60950-1 E222736) SIP/SMT05 SIP05 112th PDF

    sim 900A

    Abstract: LT 2105
    Text: /T lin C A B T E C H N O LO G Y _ LT1189 Low Pow er V id e o D ifference Am plifier DCSCRIPTIOH F € f lT U R € S • Differential or Single-Ended Gain Block Adjustable The LT1189 is a difference am plifier optimized for opera­


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    LT1189 LT1189 20V/ns, 35MHz, 600ns. sim 900A LT 2105 PDF

    Motorola 2N6083

    Abstract: 2N6083
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6083 The RF Line 30 W - 175 MHz RF POWER TRANSISTOR N P N S IL IC O N IMPN SILIC O N RF POWER T R A N SIS T O R S . . . designed for 12.5 V o lt V H F large-signal amplifier applications required in commercial and industrial equipment operating to


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    2N6083 Motorola 2N6083 2N6083 PDF

    Motorola 2N6083

    Abstract: sem 2106 2N6083
    Text: MOTOROLA SC XSTRS/R F 4bE D b3tj?2S4 00^4120 MOTOROLA Ô MOTb T -3 5 ~ u • SEM ICONDUCTOR i TECHNICAL DATA 2N6083 The R F Line 30 W - 175 MHz 2 RF POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTORS . . . designed for 1 2.5 V o lt V H F large-signal am plifier applications


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    2N6083 Motorola 2N6083 sem 2106 2N6083 PDF

    Untitled

    Abstract: No abstract text available
    Text: C J uim LT1166 TECHNOLOGY Power Output Stage Autom atic Bias System FCATUR6S D € S C R IC T IO n • S et Class A B Bias Currents The LT 116 6 is a bias generating system for controlling ■ Elim in ate s Adjustm ents class A B output current in high powered amplifiers. W hen


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    LT1166 LT1206 250mA/60MHz 00V/ps 700Wns LT136 OG14bflfc. PDF

    130001 power transistor

    Abstract: transistor 130001 K1746 pepi c MRF426A MRF426 VK20Q PEPI -CH 2204B 725M
    Text: lt.3t.7HS4 007&clû3 1 89D 7 8 9 8 3 6 3 6 7 2 5 4 MOTOROLA SC <X STR S/R F D 3 7 - A * MOTOROLA SEMICONDUCTOR MRF426 MRF426A TECHNICAL DATA T h e R F L in e 25 W P E P )- 3 0 M H z R F POWER TRANSISTOR NPN S IL IC O N NPN SILICON RF POWER TRANSISTOR . . . designed for high gain driver and output linear am plifier stages


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    MRF426 MRF426A MRF426, 130001 power transistor transistor 130001 K1746 pepi c MRF426A VK20Q PEPI -CH 2204B 725M PDF

    Untitled

    Abstract: No abstract text available
    Text: /¿ A 1 0 5 FAIRCHILD • /¿ A 3 0 5 M A 3 0 5 A • m A 3 7 6 A S c h lu m b e rg e r C o m p a n y V o lt a g e R e g u la t o r s Linear Products Connection Diagram 8-Pin Metal Package Description The 1 0 5 /3 0 5 /3 0 5 A /3 7 6 are M onolithic Positive


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    nA305 /xA305A uA376 PDF

    NJL5801k

    Abstract: NJLS801K
    Text: NJL5801K um, m • ÿt-3F$El CS ¿i'4W - KJL5801KIÌ, i í í Ü ± l 7 ) ^ R E D t 7 í h y-f t f - tz'l'mrv? )l>tíit>y * HIIS «ri ?L-y7°'ibL/'cgi5lc * ì 1 b U 7 U ÿ ? T'T „ ■ it f i • « ; 7 !■FU *"¡I]SÍH*J/¡ás • I'M^ - * a HI Siile J: è 7 ■>'? A i t i t i X - T T L iz it it ë n lt ë


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    NJL5801K KJL5B01KCi, NJLS801K 2-108-SfrBftM- 01/as NJL5801k NJLS801K PDF

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V fT E L iC V53C 104N H IG H PER FO RM A N CE, 3 .3 VO LT 2 5 6 K X 4 B IT F A S T P A G E M O D E C M O S D Y N A M IC R A M H IG H P E R F O R M A N C E V 5 3 C 1 0 4 N Max. RAS Access Time, ' RAC Max. Column Address Access Tim e, tCAA 6 0 /6 0 L


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    V53C104N-80 V53C104N PDF

    HA-4950

    Abstract: SH 2104
    Text: HA-4950 HARRIS ¡n S E M IC O N D U C T O R PRO DU CT S DIVISION \M 3 Precision High Speed Comparator A DIVISION OF HA RRIS CORPORATION Preliminary FEATURES DESCRIPTION H A -4 9 5 0 • F A S T R E S P O N S E T IM E 40ns • T O T A L U N C E R T A IN T Y B A N D


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    HA-4950 HA-4950 SH 2104 PDF

    lt1021

    Abstract: LT1021DCS8-10 lt1021 APPLICATION LT1021-10 LT1021-5 LT1021-7 LT1021DCS8 LT1021DCS8-5 LT1021DCS8-7
    Text: / T L inTECHNOLOGY tA R _ LT1021DCS8 Precision Reference FCRTURCS DCSCRIPTIOD • ■ ■ ■ ■ ■ ■ ■ The LT1021 is a precision reference with ultra low drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The reference output


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    LT1021DCS8 20ppm/Â 100dB 10ppm/Â LT1021 LT1021DCS8-10 lt1021 APPLICATION LT1021-10 LT1021-5 LT1021-7 LT1021DCS8 LT1021DCS8-5 LT1021DCS8-7 PDF

    Amplifier type t thermocouple op07

    Abstract: LT1012A OP07S allen bradley potentiometer type j Mosfet U1012 "Op Amp" lm 741 U1012 diode LT1012 LT1012D LT1012S8
    Text: LT1012A/LT1012 r r i m m TECHNOLOGY Picoamp Input Current, Microvolt Offset, Low Noise Op Amp F€ATUR€S DCSCRIPTIOn • OP-07 Type Performance at 1/8th of OP-07’s Supply Current at 1/20th of OP-07’s Bias and Offset Currents ■ Guaranteed Offset Voltage


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    LT1012A/LT1012 OP-07 1/20th QP-07 1Hzto10Hz 25/iV 100pAMax 500/iA 114dB Amplifier type t thermocouple op07 LT1012A OP07S allen bradley potentiometer type j Mosfet U1012 "Op Amp" lm 741 U1012 diode LT1012 LT1012D LT1012S8 PDF

    Untitled

    Abstract: No abstract text available
    Text: urm LINEAR TECHNOLOGY CORP 53E D • 5Sia4bfl 000b3G3 b37 « L T C 7 - 7 9 - c 7-«2o LT1126/LT1127 TECHNOLOGY D ual/Q uad D ecom pensated Low Noise, High Speed Precision O p Amps D€SCMPTIOn F€ATUR€S ■ 100% Tested Low Voltage Noise ■ Slew Rate ■ Galn-Bandwidth Product


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    000b3G3 LT1126/LT1127 LT1126 LT1127 LT1124 LT1125 LT1124/LT1125. LT1126/LT1127 LT112 PDF

    PAC PIN DIAGRAM

    Abstract: No abstract text available
    Text: A OBJECTIVE / ¿ A CALIFORNIA MICRO DEVICES PAC 21S07A ►► ► ► ► P/ACTIVE ACTIVE SCSI 2/3 TERM INATION NETWORK Features • • • • • • Pin Assignments Fully backward com patible to the industry standard 2107 and 21 S07A SCSI term inators


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    21S07A 21S07AS/T PAC21 S07AS/R PAC21S07AS PAC PIN DIAGRAM PDF

    2N6792

    Abstract: 2N6791
    Text: POWER MOSFET TRANSISTORS 400 Volt, 1.8 Ohm N-Channel FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rouom and a high transconductance. Fast Switching


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    2N6791 2N6792 2N6792 2N6791 PDF

    LT 2105

    Abstract: LT1021D-7 LT 2107
    Text: / Ÿ L i n t A B _ LT1021DCS8 TBDHNOLOGY Precision Reference FCATUMS DCSCRIPTIOD • ■ ■ ■ ■ ■ ■ ■ The LT1021 is a precision reference with ultra low drift and noise, extremely good long term stability, and almost total immunity to input voltage variations. The reference output


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    LT1021DCS8 LT1021 LT 2105 LT1021D-7 LT 2107 PDF

    rrMH 2-107

    Abstract: relay 1215 RRMH ASEA RRMH rK-11 ASEA RRM17 RRME 1102 annunciator relay asea, electromagnetic 110 v dc relay circuit diagram of door alarm system
    Text: Catalogue RK 13-2 E Annunciator system type D w ith flashing lights RRSD RTOD RRSDD RRSU2 ~ 1 • r iT ir d t iî r ir n > RRM17 Decembe* 1966 Edition 1 I The ASEA fault-annunuiatoi system type D has the follow ing f-’atur«?s: • faults are indicated before ack­


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    RRM171 rrMH 2-107 relay 1215 RRMH ASEA RRMH rK-11 ASEA RRM17 RRME 1102 annunciator relay asea, electromagnetic 110 v dc relay circuit diagram of door alarm system PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1126/111127 CHNOLOGY Dual/Quad Decompensated Low Noise, High Speed Precision Op Amps D C S C ftlP TIO fl FCATUAC S • 100% Tested Low Voltage Noise ■ Slew Rate ■ Gain-Bandwidth Product ■ Offset Voltage, Prime Grade Low Grade ■ High Voltage Gain


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    LT1126/111127 65MHz 10OpV 112dB 116dB LT1126/LT1127 500kHz LT1126/LT1127 LT1126 PDF

    2107B

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs M 5L 2107BP, S 4 0 9 6 -B IT 4 0 96 -W 0R D BY 1-B IT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) These devices are 40 96-w o rd by 1-bit dynam ic RAM s, fab­ ricated w ith the N-channel silicon-gate M O S process. These RAMs are designed fo r large-capacity m em ory systems


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    2107BP, 200ns 300pF. 54601P 2107B PDF

    s07a

    Abstract: 21s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL
    Text: a OBJECTIVE » k CALIFORNIA MICRO DEVICES PAC ►► ► ► ► 2 1 S07A P/ACTIVE ACTIVE SCSI 2/3 TERM INATIO N NETW ORK Pin Assignments Features • • • • • • Fully backward com patible to th e industry standard 2107 and 2 1 S07A SCSI term inators


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    21S07A 21S07A 21S07AS 16-Pin lfl31bMQ s07a 21s07 PAC21S07AS S50K 4.7 microfarad capacitor 22jL PDF

    1N5160

    Abstract: MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt
    Text: DEVICE INDEX Devices characterized in Volume II show the page reference only. Devices characterized in Volume I are referenced by volume and page number. DEVICE 1N5000 1N5001 1N5002 1N5003 1 N 5 1 3 9 .A 1 N 5 1 4 0 .A 1 N 5 1 4 1 .A 1 N 5 1 4 2 .A 1 N 5 1 4 3 .A


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    1N5000 1N5001 1N5002 1N5003 1N5149 1N5150 1N5153 1N5155 1N5158 1N5159 1N5160 MAX 6438 GEO SEMICONDUCTORS 2N6058 transistor bf 175 2N3902 2N5696 1N5788 Germanium itt PDF