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    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 300us, 2007-Ver3 OT-23 PDF

    LT2301A

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 2007-Ver3 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT2301A -G P-Channel Enhancement Mode Mosfet GENERAL DESCRIPTION FEATURES The LT2301A is the P-Channel logic enhancement mode power field ● RDS(ON) ≦75mΩ@VGS=-4.5V effect transistors are produced using high cell density , DMOS trench ● RDS(ON) ≦95mΩ@VGS=-2.5V


    Original     		LT2301A 300us, OT-23 PDF