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LT4446 Abstract: TA7042 60V 2A MOSFET N-channel RA0812 Text: LT4446AC N-Channel 60-V MOSFET GENERAL DESCRIPTION FEATURES The LT4446AC is the N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V trench technology. This high density process is especially tailored to	Original	LT4446AC LT4446AC LT4446 TA7042 60V 2A MOSFET N-channel RA0812	PDF

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Abstract: TA7042 60V 2A MOSFET N-channel RA0812
Text: LT4446AC N-Channel 60-V MOSFET GENERAL DESCRIPTION FEATURES The LT4446AC is the N-Channel logic enhancement mode power ● RDS ON ≦41mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON)≦52mΩ@VGS=4.5V trench technology. This high density process is especially tailored to

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LT4446AC LT4446AC LT4446 TA7042 60V 2A MOSFET N-channel RA0812

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