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    b0330

    Abstract: No abstract text available
    Text: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0


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    PDF BD330 OT-32 BD329. Lti53T31 7Z62126 bbS3131 D0343S3 B0330 b0330

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    Abstract: No abstract text available
    Text: N AUER PHILIPS/DISCRETE hb53T31 0033Sb3 Q • SSE D BYV32F SERIES T -Q 3 -/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery


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    PDF hb53T31 0033Sb3 BYV32F OT-186 Lti53T31 0Q52S7Q 0D55S71