M 32 AB TRANSISTOR Search Results

M 32 AB TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

M 32 AB TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CM100TX-24S Abstract: ak 957 K3029 Text: CM100TX-24S Six IGBTMOD NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 100 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM100TX-24S Amperes/1200 CM100TX-24S ak 957 K3029	PDF
transistor MJ 122 Abstract: CM150TX-24S K3029 Text: CM150TX-24S Six IGBTMOD NX-Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM150TX-24S Amperes/1200 transistor MJ 122 CM150TX-24S K3029	PDF
Untitled Abstract: No abstract text available Text: CM150TX-24S Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Six IGBT NX-Series Module 150 Amperes/1200 Volts A E F K Q K J M AE AF AD K G K K K M K AA AB C K M AC DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM150TX-24S Amperes/1200	PDF
CM100TX-24S Abstract: ak 957 K3029 Text: CM100TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 100 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM100TX-24S Amperes/1200 CM100TX-24S ak 957 K3029	PDF
CM150TX-24S Abstract: K3029 Text: CM150TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM150TX-24S Amperes/1200 CM150TX-24S K3029	PDF
CM75TX-24S Abstract: K3029 Text: CM75TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 75 Amperes/1200 Volts AE AF AD A E K AC F K Q K J M G K K M K AA AB C K K M DETAIL "A" Z AJ 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM75TX-24S Amperes/1200 CM75TX-24S K3029	PDF
transistor 1548 b Abstract: CM150TX-24S Text: CM150TX-24S Six IGBTMOD NX-S Series Module Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 150 Amperes/1200 Volts AJ AK AG A D K E AH F G J H L K M K M K K AA AB C K L K K K DETAIL "A" Z 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31	Original	CM150TX-24S Amperes/1200 transistor 1548 b CM150TX-24S	PDF
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10	PDF
MMM6029 Abstract: NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications Text: ZigBee Transceivers RF Cellular Subsystems Low Power RF Components RF Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers CATV Distribution Amplifier Modules Quarter 4, 2005 SG1009Q42005 Rev 0 What’s New! Market Product GSM/GPRS Cellular	Original	SG1009Q42005 MMM6025, MMM6035 MC13820 MRF6P3300HR3, MRF6P3300HR5 MRF6S9045NR1, MRF6S9045NBR1, MRF6S9060NR1, MRF6S9060NBR1, MMM6029 NONLINEAR MODEL LDMOS MMM6007 baseband DigRF semiconductor cross index MRF5S9080NB MW6S010 MMM6000 MMH3101NT1 MRF648 applications	PDF
transistor dk Abstract: dk transistor Text: SKM 111AR MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions P, Q DK R%+ 8 * 55 /.&)3L45) 5;),4=4)0 Values Units ABB DBB @AKBC IBB X DB 9 ZB GGG [ AKB @ADKC S 1 1 S R% DKBB S <¥ Q 9 <6 DBB 1 <¥V Q 9 <6V IBB 1 SM6 <M <MV SW6 P2Y+ @P5.:C S45/* P5 Q DK @UBC R%	Original	111AR transistor dk dk transistor	PDF
BLF369-NXP Abstract: transistor r8 BLF369 EZ90-25-TP VHF transmitter circuit Text: BLF369 Multi-use VHF power LDMOS transistor Rev. 04 — 19 February 2009 Product data sheet 1. Product profile 1.1 General description A general purpose 500 W LDMOS RF power transistor for pulsed and continuous wave applications in the HF/VHF band up to 500 MHz.	Original	BLF369 BLF369 BLF369-NXP transistor r8 EZ90-25-TP VHF transmitter circuit	PDF
Wavetek 395 Abstract: J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf Text: MC13156 Wideband FM IF System The MC13156 is a wideband FM IF subsystem targeted at high performance data and analog applications. Excellent high frequency performance is achieved at low cost using Motorola’s MOSAIC 1.5 bipolar process. The MC13156 has an onboard grounded collector VCO transistor	Original	MC13156 Wavetek 395 J280 MC13156F 143-18J12 hp3780A Wavetek 164 MPS901 toko transformer IF 455 khz colpitts oscillator vhf	PDF
Untitled Abstract: No abstract text available Text: S G * S 'I H O M S O N SD1476 jï RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS • 55 - 88 MHz . 32 VOLTS . COMMON EMITTER i GOLD METALLIZATION . INTERNAL INPUT MATCHING . CLASS AB PUSH PULL . HIGH SATURATED POWER CAPABILITY - DIFFUSED EMITTER BALLAST	OCR Scan	SD1476 SD1476 7TETE37 G7GS10	PDF
Untitled Abstract: No abstract text available Text: an A M P com pany Wireless Bipolar Power Transistor, 75W 850 - 960 MHz PH0810-75 V2.00 Features • • • • • D esigned for L inear A m plifier A pplications Class AB: -32 clBc Typ 3rd 1MD at 75 W atts PEP C om m on H m itter C onfig u ratio n In tern al In p u t a n d O u tp u t Im p ed a n ce M atching	OCR Scan	PH0810-75	PDF

A1306 TRANSISTOR Abstract: t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor Text: IEMENS AKTIENGESELLSCHAF 03E J> • -fZ 3 ? - û l ÔB3SbQS DOlSfciBR û BISIEG Leistungstransistoren Power Transistors N-Kanal Anreicherungstypen im Kunststoffgehäuse T0-220 AB N channel enhancement types in plastic package T0-220 AB Typ Type ^DS max fc(max)	OCR Scan	O-220 T0-220 C67078- A1300-A2 A1329-A2 A1301-A2 BUZ11 A1301-A3 A1330-A3 A1331-A2 A1306 TRANSISTOR t a1306 A1306A A3206A A1316-A3 A1318 A1309 a1328 A1013 A1300 transistor	PDF
TIPI27 Abstract: No abstract text available Text: TOSHIBA {DISCRETE/OPTO! ' ÌQ d \| ^7250 0GlbLH3 5 \| ~ T- z ? - 2 5 K2E3S3S Sm all Signal Transistor Type No, Vceo SOT-23MOD TO-92 V (mA) HFE V ce(V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 100-300 1.0 10 2N3905 YTS3905 -4 0	OCR Scan	OT-23MOD 2N3903 YTS3903 2N3904 YTS3904 2N3905 YTS3905 2N3906 YTS3906 2N4123 TIPI27	PDF
BCX70J Abstract: No abstract text available Text: BEE D • ÔS3h3B0 0Q3.bb?ä ? ISIP. NPN Silicon AF Transistors SIEMENS/ SPCLi SEMICONDS BCW 60 BCX 70 T-3^-17 • • • • • For AF input stages and driver applications High current gain Low coilector-em itter saturation voltage Low noise between 30 Hz and 15 kHz	OCR Scan	A23b32G BCW60 BCX70 102kHz BCX70J	PDF
transistor D40e7 Abstract: D40E5 D40E7 tab ic D40E D40E1 D41E TO 5 pin configuration Text: Silicon Power Tab I— >J I &f= Transistors > I r— I D40E “ Color Molded” T he G eneral E lectric D 40E is a brow n, silicone plastic encapsulated, pow er transistor designed for various specific an d gen eral purpose applications, such as: o u tp u t and	OCR Scan		PDF
D40E5 Abstract: D40D14 tab ic D40D5 D4102 D40D1 D40D2 D40D3 D40D4 D40D7 Text: SILICON POWER TRANSISTORS COMPLEMENTARY - 1 AMPERE Pt •c T c = 25°C v CEO Cont. Min. <A V) (W) GE Type NPN PNP @ 2V , h FE 100mA hFE @ 2V , 1A Min. Max. Min. 10 D40D1 - 6.25 30 1.0 50 150 - D41D1 6.25 -3 0 1.0 50 150 D40D2 - 6.25 30 1.0 120 360 20 - D41D2	OCR Scan	100mA D40D1 D41D1 D40D2 D41D2 D40D3 D40D4 D41D4 D40D5 D40E5 D40D14 tab ic D40D5 D4102 D40D7	PDF
Untitled Abstract: No abstract text available Text: S C S -T H O M S O N S D 1456 T C C 3100 5 7 . RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS 170 - 230 MHz 28 VOLTS CLASS AB PUSH PULL DESIGNED FOR HIGH POWER LINEAR OPERATION HIGH SATURATED POWER CAPABILITY GOLD METALLIZATION DIFFUSED EMITTER BALLAST	OCR Scan	SD1456	PDF
NEM085068-28 Abstract: NEM081 Text: CLASS AB/C, 860 MHz, 28 VOLT MATCHED TRANSISTOR NEM081568-28 NEM085068-28 NEM085068-28 OUTPUT POWER vs. FREQUENCY FEATURES • HIGH PO W ER A N D HIG H G A IN :f = 860 MHz, Class AB • NEM 081568-28: Po>41 dBm, G p>8 dB • NEM 085068-28: Po>46.2 dBm, G p>6.2 dB	OCR Scan	NEM081568-28 NEM085068-28 NEM085068-28 b427525 NEM081	PDF
Untitled Abstract: No abstract text available Text: * M * DISCRETE SEMICONDUCTORS LLE16350X NPN silicon planar epitaxial microwave power transistor Preliminary specification File under Discrete Semiconductors, SC15 October 1992 Philips Semiconductors PHILIPS bbS3T31 003301b ^ P h ilip s S em iconductors P relim inary sp e cifica tio n	OCR Scan	LLE16350X bbS3T31 003301b 33Q2M	PDF
2SC3660A Abstract: 2SC3660 Text: CLASS AB/C, UHF, 28 VOLT PUSH-PULL TRANSISTOR NEM060C69-28 NEM080C69-28 NEM080C69-28 OUTPUT POWER AND COLLECTOR EFFICIENCY vs. FREQUENCY FEATURES HIGH POWER AND HIGH GAIN: Vcc = 28 V.CIass AB NEM080C69-28: PO = 49.6 dBm, GP = 5.6 dB TYP NEM060C69-28: PO = 50.2 dBm, GP = 8.2 dB (TYP)	OCR Scan	NEM080C69-28: NEM060C69-28: NEM060C69-28 NEM080C69-28 NEM080C69-28 L4E75E5 0Qt57fib NEM060C69-28, 2SC3660A 2SC3660	PDF
m 32 ab transistor Abstract: 2SC3286 2SC3286-M "2-30 mhz" 2SC3286M wideband 28 Text: DATA SHEET SILICON POWER TRANSISTOR 2SC3286-M NPN SILICON EPITAXIAL TRANSISTOR FOR 230-MHz WIDEBAND POWER AMPLIFIER INDUSTRIAL USE FEATURES PACKAGE DIMENSIONS in millimeters • High gain and high power output at 230 MHz Pout = 140 W @ V cc = 28 V, 2 ± 0.2	OCR Scan	2SC3286-M 230-MHz m 32 ab transistor 2SC3286 2SC3286-M "2-30 mhz" 2SC3286M wideband 28	PDF

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M 32 AB TRANSISTOR Search Results

M 32 AB TRANSISTOR Result Highlights (5)

M 32 AB TRANSISTOR Datasheets Context Search

CM100TX-24S

transistor MJ 122

Untitled

CM100TX-24S

CM150TX-24S

CM75TX-24S

transistor 1548 b

transistor 5cw

MMM6029

transistor dk

BLF369-NXP

Wavetek 395

Untitled

Untitled

A1306 TRANSISTOR

TIPI27

BCX70J

transistor D40e7

D40E5

Untitled

NEM085068-28

Untitled

2SC3660A

m 32 ab transistor