M05FET Search Results

Contextual Info: SFH9240 Advanced Power M05FET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = -200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA Max. @ VDS= -200V

Contextual Info: PRODUCT CÂTÂlûi Æ iition N-CHANNEL ENHANCEMENT MOS FET 400V, 2 5 A , 0.21Q SDF360 SDF360 SDF360 SDF360 RGS=1.0Mn (1 ) RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS LOW IR LOSSES LOW THERMAL RESISTANCE

SG2844D

Abstract: SG3844M M05FET
Contextual Info: UN Doc #; 1844 SG1844/SG1845 Series C urrent T he I n f i n i t e P o w e r I nnov at i o n of P M ode P W M D r o d u c t i o n DESCRIPTION p ro v id e s all the n e c e s sa ry features to d riv e the gate o f a p o w e r M O S F E T . c u rren t-m o d e sw itc h in g p o w e r su p p lie s

pj 72 diode

Abstract: pj 49 diode pj 44 diode ic 7pin dip PWM Converter pj 89 diode 9v 200 ohm relay P248L VP0808 vp1550 pj 85 lv
Contextual Info: Chapter S: Product Selector Guides Chapter Product Selector Guides 1. Hotswap Controller ICs/lnrush Current Limiters/Circuit Breaker IC s. 248 2. LED Driver IC s .

Contextual Info: JHltron PRODUCT DEVICES.INC. N-CHANNEL ENHANCEMENT MÜS FET 3301 E L E C T R O N I C S W A Y • W E S T P A L M BEACH, F L O R I D A 3 3 4 0 7 TEL: 407 8 4 8 - 4 3 1 1 • TLX: 5 1 - 3 4 3 5 « F A X : (407) 0 6 3 - 5 9 4 6 MAXIMUM SYMBOL PARAMETER D r □ in-source Volt.(l)

M05-fET

Abstract: LTA320 M05FET LTA-320
Contextual Info: LIN EAR S YSJiM S LS320 MONOLITHIC BI-FET AMPLIFIER FEATURES * DIRECT REPLACEMENT FOP. AKPEREX LTA-320 * HIGH INPUT RESISTANCE P.gs=100 Gohns tin * HIGH GAIN (Yfs=30,000 uchos tin) * LOK »OISE (Vn=25 uV cyp) * ADDITIONAL SCREENING AVAILABLE * AVAILABLE IN: DIE FOR«, TO-71, TO-92, SOIC

M05FET

Contextual Info: Æ lltron PRODUCT D E V IC E S .IN C . 500V, 40A, 0.14Û ABSOLUTE MAXIMUM RATINGS PARAMETER UNITS SYMBOL D r a i n - s o u r c e Vo I t . 1 Drain-Gate Voltage (Rgs = 1 . O M n ) ( 1 ) Gate-Source Voltage Con t inu o u s Drain Current Continuous (Tc = 2 5 ‘C)

Contextual Info: PRODUCT ÂTÂl©' Æ tltron N-CHANNEL ENHANCEMENT MOS FET 900V, 3.0A, SDF3N90 SDF3N90 4.6Q ABSOLUTE MAXIMUM RATINGS JAA JAB PARAMETER FEATURES • RUGGED PACKAGE • HI-REL CONSTRUCTION • CERAMIC EYELETS • LEAD BENDING OPTIONS • COPPER CORED 52 ALLOY PINS

M05-fET

Abstract: M05FET
Contextual Info: Supertex inc. HV826 Preliminary High-Voltage EL Lamp Driver Ordering Information_ Package Options Device MSOP-8 SO-8 Die HV826 HV826MG HV826LG HV826X Features General Description □ 1,8V to 3.5V operating supply voltage The Supertex HV826 is a high voltage driver designed for driving

SDF6N60

Contextual Info: PRODUCT ^ litro n CÂTÂl < N-CHANNEL ENHANCEMENT MOS FET 600V, 6.0A, 1 .20 ABSOLUTE MAXIMUM RATINGS SDF6N60 SDF6N60 PARAMETER JAA JAB FEATURES • • • • • • • • RUGGED PACKAGE HI-REL CONSTRUCTION CERAMIC EYELETS LEAD BENDING OPTIONS COPPER CORED 52 ALLOY PINS

M05-fET

Contextual Info: IRFW/I710A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ B BVDss “ 400 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 uA M ax. @ VDS = 400V

M05-fET

Abstract: power mosfet j 162 D943
Contextual Info: IRFP440A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA M ax. @ ■ B V dss ~ 500 V ^D S(on) =