m23c1001
Abstract: No abstract text available
Text: rZ Z ^ 7# S G S -T H O M S O N M [i3©@[L!ICT[Ri©M gS M23C1001 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CMOS" CONSUMPTION : _ Operating current 40 mA Max. _ Standby current 20 ^A Max.
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M23C1001
1024K
PDIP-32
M23C1001
PDIP32
32-PIN
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON M23C1001 ^ 7 # IM ^ Q iŒ (*(Q )[*S CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|xA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION
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M23C1001
100ns
M23C1001
PDIP32
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AAZZ
Abstract: m23c100
Text: / = T SGS-THOMSON * J Æ > RfflD g^(Q iLi(gU^ iD(gi M23C1000 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION
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M23C1000
100ns
M23C1000
100ns
VA00665
PDIP28
AAZZ
m23c100
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Untitled
Abstract: No abstract text available
Text: ¿ = 7 SG S -ltfO M SO N M23C1000 CMOS 1 Megabit 128K x 8 ROM • FAST ACCESS TIME: 100ns ■ LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20|iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION ■ CHIP ENABLE ACTIVE LEVEL MASK PRO
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M23C1000
100ns
M23C1000
PDIP28
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23c1000
Abstract: No abstract text available
Text: f Z 7 SGS-THOMSON ^7# M [R!©IIL[I STr[KS©[MDËS M 23C 1000 1024K (128K x 8 CMOS ROM • VERY FAST ACCESS TIME : 100 ns (Chip select or address access time) ■ LOW POWER "CM O S” CONSUMPTION : _ Operating current 40 mA Max. _ Stand by current 20 |iA Max.
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1024K
PDIP-28
23C1000
M23C1000B1
PDIP28
28-PIN
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EPROM
Abstract: M87C512 m27c256 UV EPROM ET2716
Text: GENERAL INDEX EPROM DEVICES NMOSEPROM M/ET2716 2K x 8 M2732A (4K x 8) M2764A (8K x 8) M27128A (16K x 8) M27256 (32K x 8) M27512 (64K x 8) UV EPROM . UV EPROM .
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M/ET2716
M2732A
M2764A
M27128A
M27256
M27512
TS27C64A
M27HC641
M27C256B
M87C257
EPROM
M87C512
m27c256
UV EPROM
ET2716
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256x16 eprom
Abstract: GS-2I5-D12 GS-D250M PHDIP28 GS-2I12-9 512X8 from 128x8 ram L293D shield gs-2i5 PHDIP24 ESM1602B
Text: SELECTION GUIDE For detailed information on products referred to in the selection guide but not included as datasheet in this book, please refer to the databook indicated in column "DB" SGS-THOMSON DATABOOKS ORDER CODE DB a 4 B IT MCU FAMILY ET9400 DBET9400ST/1
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ET9400
EF6801/04/05
ISB12000
ISB18000
MKI48Z18
PHDIP28
MK48Z30,
256x16 eprom
GS-2I5-D12
GS-D250M
GS-2I12-9
512X8 from 128x8 ram
L293D shield
gs-2i5
PHDIP24
ESM1602B
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mask rom
Abstract: No abstract text available
Text: M23C1000/1010 G/J CMOS MASK ROM (128Kx8) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • 131,072x 8 bit organization • Fast access tim e: 120ns(max). • Supply voltaga: singie+5V •Current consumption Operating: 30 mA(max.) Standby: 50/<A(max.) • Fully static operation
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KM23C1000/1010
128Kx8)
120ns
28-pin,
32-pin,
600mil,
525mil,
mask rom
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sgs thomson
Abstract: FDIP24 M87C512 eprom rom 512k x 16 bits M27C512 SGS-THOMSON capacity of EPROM
Text: ORGANIZATION ACCESS TIME PART NUMBER PACKAGE POWER SUPPLY CONSUMPTION A C T / STANDBY 16K Bits 2K x 8 350 ns M2716 FDIP 24 24K Bits 4K x 8 200 ns 4,75 to 5,25V 1 0 0 /2 5 mA 4,5 to 5,5V 450 ns M2732A FDIP 24 4,75 to 5,25V 1 2 5 /3 5 mA 4,5 to 5,5V 250 ns 300 ns
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M27512
M27256
M27128A
M2764A
M2732A
M2716
64x16
128x8
128x16
sgs thomson
FDIP24
M87C512
eprom rom 512k x 16 bits
M27C512 SGS-THOMSON
capacity of EPROM
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IP3210
Abstract: M23C1001 AAZZ m23c100
Text: S C S -T H O M S O N 0 g ( Q [i[L iW ( Q ) i0 i M 2 3 C 1001 CMOS 1 Megabit (128K x 8) ROM • FAST ACCESS TIME: 100ns • LOW POWER "CMOS" CONSUMPTION: - Active Current 40mA Max - Standby Current 20^iA Max ■ SINGLE 5V ± 10% SUPPLY VOLTAGE ■ STATIC OPERATION
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100ns
M23C1001
100ns
IP3210
AAZZ
m23c100
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