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    STMicroelectronics M29W400T-120M1

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    M29W400T Datasheets (119)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M29W400T STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY Original PDF
    M29W400T STMicroelectronics NOT FOR NEW DESIGN - 4 MBIT (512KB X8 OR 256KB X1 Original PDF
    M29W400T-100M1R STMicroelectronics 4 Mbit (256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100M1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100M5R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100M5TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100M6R STMicroelectronics 4 Mbit (512Kb x8, Boot Block) Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100M6TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N1R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N1R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N1TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N1TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N5R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N5R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N5TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N5TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N6R STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N6R STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N6TR STMicroelectronics 4 MBit (512 kBit x 8 or 256 kBit x 16, Boot Block) low Voltage Single Supply Flash Memory Original PDF
    M29W400T-100N6TR STMicroelectronics 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory Original PDF

    M29W400T Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    M29W400B

    Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS


    Original     		M29W400T M29W400B 512Kb 256Kb M29W400T M29W400B M29W400BT M29W400BB FBGA48 M29W400 M29W400BB PDF

    M29W400B

    Abstract: FBGA48 M29W400 M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		M29W400T M29W400B 512Kb 256Kb M29W400B FBGA48 M29W400 M29W400T PDF

    RD 24 105 RP

    Abstract: M29W400B M29W400 M29W400T
    Text: M29W400T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		M29W400T M29W400B x8/x16, 100ns RD 24 105 RP M29W400B M29W400 M29W400T PDF

    M29W400

    Abstract: M29W400B M29W400T
    Text: M29W400T M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.)


    Original     		M29W400T M29W400B x8/x16, 100ns M29W400T, 120ns 150ns M29W400 M29W400B M29W400T PDF

    FBGA48

    Abstract: M29W400 M29W400B M29W400T AI02065
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory DATA BRIEFING 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 90ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical


    Original     		M29W400T M29W400B 512Kb 256Kb M29W400T, 150ns 100ns 120ns FBGA48 M29W400 M29W400B M29W400T AI02065 PDF

    M29W400B

    Abstract: FBGA48 M29W400 M29W400BB M29W400BT M29W400T
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory NOT FOR NEW DESIGN M29W400T and M29W400B are replaced respectively by the M29W400BT and M29W400BB 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS


    Original     		M29W400T M29W400B 512Kb 256Kb M29W400T M29W400B M29W400BT M29W400BB FBGA48 M29W400 M29W400BB PDF

    TSOP40 Flash

    Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
    Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS


    Original     		M2716 M2732A M2764A M27128A M27256 M27512 450ns, TSOP40 Flash m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A PDF

    FDIP24W

    Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
    Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS


    Original     		M2716 450ns, FDIP24W M2732A M2764A FDIP28W M27C64A FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040 PDF

    Device-List

    Abstract: cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2
    Text: Device List Adapter List Converter List for ALL-11 JUL. 2000 Introduction T he Device List lets you know exactly which devices the Universal Programmer currently supports. The Device List also lets you know which devices are supported directly by the standard DIP socket and which


    Original     		ALL-11 Z86E73 Z86E83 Z89371 ADP-Z89371/-PL Z8E000 ADP-Z8E001 Z8E001 Device-List cf745 04 p 24LC211 lattice im4a3-32 CF775 MICROCHIP 29F008 im4a3-64 ks24c01 ep320ipc ALL-11P2 PDF

    AM29F100B

    Abstract: AM29F100T AN944 M29F100 M29F100B M29F100T MC68330 ST10R163 AN-944
    Text: AN944 APPLICATION NOTE Software Drivers for M29F100 Flash Memory CONTENTS Introduction The M29F100 Programming Model Modifying code from Am29F100 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System Limitations of the code


    Original     		AN944 M29F100 M29F100 Am29F100 M29F100A M29F100B AM29F100B AM29F100T AN944 M29F100T MC68330 ST10R163 AN-944 PDF

    AM29F100B

    Abstract: AM29F100T AN944 M29F100 M29F100B M29F100T MC68330 ST10R163 AN-944
    Text: AN944 APPLICATION NOTE Software Drivers for M29F100 Flash Memory CONTENTS Introduction The M29F100 Programming Model Modifying code from Am29F100 Generating STMicroelectronics Code C Library Functions Adapting the Software for the Target System Limitations of the code


    Original     		AN944 M29F100 M29F100 Am29F100 M29F100A M29F100B AM29F100B AM29F100T AN944 M29F100T MC68330 ST10R163 AN-944 PDF

    AM29F100B

    Abstract: AM29F100T AN944 M29F100 M29F100B M29F100T MC68330 ST10R163
    Text: AN944 APPLICATION NOTE SOFTWARE DRIVERS for M29F100 FLASH MEMORY CONTENTS Introduction The M29F100 Programming Model Modifying code from Am29F100 Generating SGS-THOMSON Code C Library Functions Adapting the Software for the Target System Limitations of the code


    Original     		AN944 M29F100 M29F100 Am29F100 M29F100A M29F100B AM29F100B AM29F100T AN944 M29F100T MC68330 ST10R163 PDF

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ


    Original     		AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257 PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B SGS-THOMSON IIIIMJì ILIì M W IIÈ Ì 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns 10jas CONS48 TSOP48 M29W400T, PDF

    Untitled

    Abstract: No abstract text available
    Text: SGS-THOMSON raD»HlLl Ê'inM l)i!lD(ei M29W400T M29W400B 4 Mb (x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS > FAST ACCESS TIME: 100ns > FAST PROGRAMMING TIME ■ 10|is by Byte / 1 6|is by Word typical


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T, PDF

    D-DQ11

    Abstract: 37 zd
    Text: ^7 7. S G S - T H O M S O M29W400T M29W400B N m 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 2.7 V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS • FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME ■ 10|iS by Byte / 16|js by Word typical


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns M29W400T, M29W400T 100ns 120ns 150ns D-DQ11 37 zd PDF

    M29W400

    Abstract: M29W400B M29W400T
    Text: M29W400T k7# . OMGMiDlglLECTMMSl _ M29W400B W. SGS-THOMSON 4 Mb x8/x16, Block Erase) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T, M29W400 M29W400B M29W400T PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 90ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


    OCR Scan     		M29W400T M29W400B 512Kb 256Kb 10jas PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit 512Kb x8 or 256Kb x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


    OCR Scan     		M29W400T M29W400B 512Kb 256Kb 100ns 10jas M29W400T, PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical ■ PROGRAM/ERASE CONTROLLER (P/E.C.)


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns 10jas M29W400T, PDF

    M29W400

    Abstract: M29W400B M29W400T
    Text: W . SGS-THOMSON M29W400T k7# . OMGMiDlglLECTMMSl _ M29W400B 4 Mb x8/x16, Block Erase) LOW VOLTAGE SING LE SUPPLY FLASH M EM O RY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns TSOP48 M29W400T, M29W400 M29W400B M29W400T PDF

    Untitled

    Abstract: No abstract text available
    Text: M29W400T M29W400B SGS-THOMSON 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY PR ELIM IN A R Y DATA 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 100ns FAST PROGRAMMING TIME 10p,s by Byte / 1 6p.s by Word typical


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns PDF

    M29W400

    Abstract: M29W400B M29W400T
    Text: M 29W 400T M 29W 400B 4 Mbit x8/x16, Block Erase Low Voltage Single Supply Flash Memory • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10|iS by Byte / 1 6|as by Word typical


    OCR Scan     		M29W400T M29W400B x8/x16, 100ns M29W400T, M29W400 M29W400B PDF

    Untitled

    Abstract: No abstract text available
    Text: 7/ SGS-THOMSON M^mooT IMlMIIlLIOTiMDtgS M29W400B 4 Mb x8/x16, Block Erase LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY • 2.7V to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 100ns ■ FAST PROGRAMMING TIME - 10jas by Byte / 1 6|us by Word typical


    OCR Scan     		M29W400B x8/x16, 100ns 10jas M29W400T, PDF