transistor m33
Abstract: NEC TRANSISTOR MARKING CODE M33 TRANSISTOR NE851M33 NE851M33-T3 date code marking NEC
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33) package
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NE851M33
NE851M33-T3
transistor m33
NEC TRANSISTOR MARKING CODE
M33 TRANSISTOR
NE851M33
NE851M33-T3
date code marking NEC
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maximum gain s2p
Abstract: NE851M33 NE851M33-T3 NE851M33-T3-A MARKING CODE m33 M33 TRANSISTOR NEC MARKING CODE M33 marking
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE851M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • Low phase distortion, low voltage operation • Ideal for OSC applications • 3-pin super lead-less minimold (M33, 0804 PKG) package
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NE851M33
NE851M33-A
NE851M33-T3
NE851M33-T3-A
maximum gain s2p
NE851M33
NE851M33-T3
NE851M33-T3-A
MARKING CODE m33
M33 TRANSISTOR
NEC MARKING CODE
M33 marking
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M33 TRANSISTOR
Abstract: NEC TRANSISTOR MARKING CODE NE687M33 NE687M33-T3
Text: DATA SHEET NPN SILICON RF TRANSISTOR NE687M33 NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN SUPER LEAD-LESS MINIMOLD M33 FEATURES • Low noise NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin super lead-less minimold (M33) package
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NE687M33
NE687M33-T3
M33 TRANSISTOR
NEC TRANSISTOR MARKING CODE
NE687M33
NE687M33-T3
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M33 TRANSISTOR
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
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NESG2107M33
NESG2107M33
NESG2107M33-T3
M33 TRANSISTOR
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NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A
Text: PRELIMINARY DATA SHEET NEC's NPN SILICON TRANSISTOR NESG2107M33 FEATURES • IDEAL FOR OSC., HIGH-GAIN AMPLIFICATION APPLICATIONS • HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
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NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
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NESG2107M33
Abstract: NESG2107M33-A NESG2107M33-T3-A A720A
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2107M33 NPN SiGe RF TRANSISTOR FOR HIGH FREQUENCY, LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for OSC, low noise, high-gain amplification
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NESG2107M33
NESG2107M33-T3
NESG2107M33-A
NESG2107M33-T3-A
NESG2107M33
NESG2107M33-A
NESG2107M33-T3-A
A720A
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NE851M33
Abstract: NE851M33-T3-A
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33-A 50 pcs (Non reel)
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NE851M33
NE851M33-A
NE851M33-T3-A
NE851M33
NE851M33-T3-A
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M33 TRANSISTOR
Abstract: marking E7 NE851M33 NE851M33-T3 360 U
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE851M33 FEATURES • LOW PHASE DISTORTION, LOW VOLTAGE OPERATION • IDEAL FOR OSC APPLICATIONS • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE851M33 50 pcs (Non reel)
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NE851M33
NE851M33-T3
M33 TRANSISTOR
marking E7
NE851M33
NE851M33-T3
360 U
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M33 nec
Abstract: M33 TRANSISTOR NESG2046M33 marking T7
Text: PRELIMINARY DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification
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NESG2046M33
NESG2046M33-T3
M33 nec
M33 TRANSISTOR
NESG2046M33
marking T7
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M33 TRANSISTOR
Abstract: transistor m33 MARKING W2 NE687M33 NE687M33-T3
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33 50 pcs (Non reel)
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NE687M33
NE687M33-T3
M33 TRANSISTOR
transistor m33
MARKING W2
NE687M33
NE687M33-T3
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NE687M33
Abstract: NE687M33-A NE687M33-T3-A MARKING CODE m33
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE687M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION PART NUMBER QUANTITY SUPPLYING FORM NE687M33-A 50 pcs (Non reel)
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NE687M33
NE687M33-A
NE687M33-T3-A
NE687M33
NE687M33-A
NE687M33-T3-A
MARKING CODE m33
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NE685M33
Abstract: NE685M33-T3
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
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NE685M33
NE685M33-T3
NE685M33
NE685M33-T3
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NE685M33-T3-A
Abstract: NE685M33 NE685M33-A
Text: DATA SHEET NEC's NPN SILICON TRANSISTOR NE685M33 FEATURES • LOW NOISE: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 3 mA, f = 2 GHz • INSERTION POWER GAIN: |S21e|2 = 11 dB TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • 3-PIN SUPER LEAD-LESS MINIMOLD M33 PACKAGE ORDERING INFORMATION
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NE685M33
NE685M33-A
NE685M33-T3-A
NE685M33-T3-A
NE685M33
NE685M33-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG2046M33 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 3-PIN SUPER LEAD-LESS MINIMOLD M33, 0804 PKG FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
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NESG2046M33
NESG2046M33
NESG2046M33-T3
NESG2046M33-A
NESG2046M33-T3-A
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Untitled
Abstract: No abstract text available
Text: VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc CASE 318–08, STYLE 6
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MMBTH10LT1
236AB)
1000MHz
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mmbth10
Abstract: MMBTH10LT1 M33 thermal marking M33 RB marking
Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors NPN Silicon 3 COLLECTOR MMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0
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MMBTH10LT1
236AB)
1000MHz
mmbth10
MMBTH10LT1
M33 thermal
marking M33
RB marking
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Philips MARKING CODE
Abstract: Datasheets for BB132 varicap marking code W1 BAT18 A2p sot143 marking code A5 Marking codes sot143 marking code A3 marking A5 sot363 marking W1 S13 SOT363
Text: DISCRETE SEMICONDUCTORS Marking codes Small-signal Field-effect Transistors and Diodes 1999 May 12 Philips Semiconductors Small-signal Field-effect Transistors and Diodes Marking codes Product types in SOT23, SOT143, SOT323, SOT343, SOT363, SOD110, SOD323 and SOD523 packages are marked
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OT143,
OT323,
OT343,
OT363,
OD110,
OD323
OD523
BF992
PMBF4416A
BF510
Philips MARKING CODE
Datasheets for BB132 varicap
marking code W1
BAT18 A2p
sot143 marking code A5
Marking codes
sot143 marking code A3
marking A5 sot363
marking W1
S13 SOT363
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M33 TRANSISTOR
Abstract: NESG2046M33-A NESG2046M33 NESG2046M33-T3-A transistor m33
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY
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NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
M33 TRANSISTOR
NESG2046M33-A
NESG2046M33
NESG2046M33-T3-A
transistor m33
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DTB743XE
Abstract: DTB743XM SC-75A
Text: DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743XE / DTB743XM zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTB743XE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than the conventional products.
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DTB743XE
DTB743XM
-200mA
DTB743XE
DTB743XM
SC-75A
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NESG2046M33
Abstract: NESG2046M33-A NESG2046M33-T3-A
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • HIGH BREAKDOWN VOLTAGE TECHNOLOGY
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NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
NESG2046M33
NESG2046M33-A
NESG2046M33-T3-A
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Untitled
Abstract: No abstract text available
Text: DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743XE / DTB743XM Applications Inverter, Interface, Driver Dimensions (Unit : mm) DTB743XE 0.7 1.6 0.55 0.3 Feature 1) VCE(sat) is lower than the conventional products.
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DTB743XE
DTB743XM
-200mA
DTB743XE
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M33 TRANSISTOR
Abstract: transistor m33 DTB743XE DTB743XM SC-75A
Text: DTB743XE / DTB743XM Transistors -200mA / -30V Low VCE sat Digital transistors (with built-in resistors) DTB743XE / DTB743XM zApplications Inverter, Interface, Driver zDimensions (Unit : mm) DTB743XE 0.7 1.6 0.55 0.3 zFeature 1) VCE(sat) is lower than the conventional products.
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DTB743XE
DTB743XM
-200mA
DTB743XE
M33 TRANSISTOR
transistor m33
DTB743XM
SC-75A
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Untitled
Abstract: No abstract text available
Text: DTB743X series PNP -200mA -30V Digital Transistors Datasheet Bias Resistor Built-in Transistors lOutline Parameter Value VCC -30V -200mA 4.7kW 10kW IC(MAX.) R1 R2 VMT3 EMT3 OUT OUT IN GND IN GND DTB743XM (SC-105AA) lFeatures DTB743XE SOT-416 (SC-75A) lInner circuit
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DTB743X
-200mA
-200mA
DTB743XM
SC-105AA)
DTB743XE
OT-416
SC-75A)
R1102A
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UKA720
Abstract: TV horizontal Deflection Systems zener diode 12c TDA9150B UKA716 pulse amplitude modulation using 555
Text: INTEGRATED CIRCUITS TDA9150B Programmable deflection controller Preliminary specification File under Integrated Circuits, IC02 July 1994 Philips Semiconductors PHILIPS PHILIPS 71 1 0 0 2 b 00 70 15 5 M33 Preliminary specification Philips Semiconductors Programmable deflection controller
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TDA9150B
711002b
16-bit
7110fl2b
UKA720
TV horizontal Deflection Systems
zener diode 12c
TDA9150B
UKA716
pulse amplitude modulation using 555
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