KMZ50
Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50
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M3D315
KMZ50
SCA57
115106/00/02/pp8
KMZ50
MS-012AA
BP317
SC17
Wheatstone Bridge amplifier
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HZG469
Abstract: PHN203
Text: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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PHN203
M3D315
OT96-1
HZG469
PHN203
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GP 821
Abstract: BLT61 MS-012AA
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain
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M3D315
BLT61
OT96-1
MBK187
SCA57
125108/00/02/pp8
GP 821
BLT61
MS-012AA
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transistor bd139
Abstract: philips power transistor bd139 BD139 smd transistor zi
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency
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M3D315
BLT71/8
OT96-1
SCA55
127067/00/02/pp12
transistor bd139
philips power transistor bd139
BD139
smd transistor zi
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SI4884
Abstract: MS-012AA
Text: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .
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SI4884
M3D315
SI4884
OT96-1
OT96-1,
MS-012AA
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UZZ7000T
Abstract: MV3008
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7000T Trigger amplifier with two wire current interface Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with two wire current interface FEATURES UZZ7000T
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M3D315
UZZ7000T
613520/01/pp8
UZZ7000T
MV3008
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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Si4800
M3D315
Si4800
OT96-1
OT96-1,
03af85
MS-012AA
Si4800 philips
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PDF
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BP317
Abstract: MS-012AA PHP222 SC13
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary specification Dual P-channel enhancement
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M3D315
PHP222
OT96-1
SCA59
135108/00/03/pp8
BP317
MS-012AA
PHP222
SC13
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KMZ41
Abstract: M3D315 MS-012AA SC17
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Product specification Supersedes data of 1996 Dec 11 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Magnetic field sensor KMZ41 DESCRIPTION
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M3D315
KMZ41
KMZ41
SCA52
115106/00/03/pp8
M3D315
MS-012AA
SC17
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PHK12NQ03LT
Abstract: No abstract text available
Text: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance
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PHK12NQ03LT
M3D315
OT96-1
MBB076
PHK12NQ03LT
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VK-2003
Abstract: VK2003 IEC 1094-4 KMZ41
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ43T Magnetic field sensor Preliminary specification Supersedes data of 2000 Aug 24 2003 Mar 26 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ43T DESCRIPTION PINNING The KMZ43T is a sensitive magnetic field sensor,
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M3D315
KMZ43T
KMZ41
01-Jun-98)
VK-2003
VK2003
IEC 1094-4
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PDF
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UZZ7001T
Abstract: MLD402
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7001T Trigger amplifier with open collector output Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with open collector output FEATURES UZZ7001T PINNING • Differential input trigger amplifier
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M3D315
UZZ7001T
613520/01/pp8
UZZ7001T
MLD402
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MBL215
Abstract: KMZ43 KMZ43T Wheatstone Bridge KMZ41 IEC 1094-4
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ43T Magnetic field sensor Preliminary specification Supersedes data of 2000 Aug 24 2003 Mar 26 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ43T DESCRIPTION PINNING The KMZ43T is a sensitive magnetic field sensor,
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M3D315
KMZ43T
KMZ43T
SCA75
613520/02/pp8
MBL215
KMZ43
Wheatstone Bridge
KMZ41
IEC 1094-4
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PDF
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PHK5NQ15T
Abstract: No abstract text available
Text: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .
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PHK5NQ15T
M3D315
PHK5NQ15T
OT96-1
OT96-1,
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PHK12NQ10T
Abstract: No abstract text available
Text: PHK12NQ10T TrenchMOS standard level FET Rev. 01 — 15 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounting package
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PHK12NQ10T
M3D315
OT96-1
PHK12NQ10T
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PHK24NQ04LT
Abstract: No abstract text available
Text: PHK24NQ04LT TrenchMOS logic level FET Rev. 01 — 12 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK24NQ04LT in SOT96-1 SO8 .
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PHK24NQ04LT
M3D315
PHK24NQ04LT
OT96-1
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MS-012AA
Abstract: PHP206
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP206 Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 05 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor
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M3D315
PHP206
SC13b
OT96-1
SCA55
137107/00/01/pp8
MS-012AA
PHP206
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PHK13N03LT
Abstract: 11611
Text: PHK13N03LT TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK13N03LT in SOT96-1 SO8 .
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PHK13N03LT
M3D315
PHK13N03LT
OT96-1
11611
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HZG469
Abstract: Si9410DY
Text: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching
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Si9410DY
M3D315
OT96-1
MBK187
MBB076
HZG469
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KMZ41
Abstract: sensor o2 -a2 Wheatstone Bridge BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Preliminary specification Supersedes data of 1998 Mar 26 2000 Apr 18 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DESCRIPTION The KMZ41 is a sensitive magnetic field sensor,
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M3D315
KMZ41
KMZ41
603512/500/04/pp12
sensor o2 -a2
Wheatstone Bridge
BP317
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PDF
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MS-012AA
Abstract: PHK12NQ03LT
Text: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .
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PHK12NQ03LT
M3D315
PHK12NQ03LT
OT96-1
OT96-1,
MS-012AA
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Si9925DY
Abstract: No abstract text available
Text: Si9925DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9925DY in SOT96-1 SO8 .
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Si9925DY
M3D315
OT96-1
OT96-1,
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MS-012AA
Abstract: Si9956DY
Text: Si9956DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9956DY in SOT96-1 SO8 .
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Si9956DY
M3D315
OT96-1
OT96-1,
MS-012AA
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Si9410DY
Abstract: No abstract text available
Text: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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Si9410DY
M3D315
OT96-1
OT96-1,
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