M5M4V16s30
Abstract: M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S30CTP-10, -12, -15 Jan. '97 16M (2-BANK x 1048576-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz
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M5M4V16S30CTP-10,
1048576-WORD
100MHz
83MHz
67MHz
/64ms
400-mil,
44-pin
44pin
M5M4V16s30
M5M4V16S30CTP-10
M5M4V16S30CTP10
M5M4V16S30CTP
M5M4V16S30CTP-12
M5M4V16S30CTP12
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KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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KM416S4030BT-G10
Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM416S4030BT-G10
KM48S2020CT-GL
81F641642B-103FN
d4564163g5
S9745-M06
M5M4V16S30DTP
gm72v661641ct7j
D4564163G5-A10-9JF
D4516821AG5
D4516821
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M5M4V16S20CTP
Abstract: M5M4V16s30 M5M4V16S30CTP M5M4V16S20
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S20CTP-10, -12, -15 Jan. '97 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz
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M5M4V16S20CTP-10,
2097152-WORD
100MHz
83MHz
67MHz
/64ms
400-mil,
44-pin
44pin
M5M4V16S20CTP
M5M4V16s30
M5M4V16S30CTP
M5M4V16S20
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KM48S2020CT-G10
Abstract: hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30
Text: R E L I A B I L I T Y A N D 6 C O M P A T I B I L I T Y Reliability and Compatibility Price is not an issue, make sure the one you are having with excellent reliability and compatibility. T o insure the product quality, the rigorous tested before product shipping is
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10BaseT
100BaseTx
XJ4336J
FMC-560
3C563C-TP
APA-1460A
PRD-250WN
KM48S2020CT-G10
hy57v168010a
HY57V168010ATC10
en210b
HY57V168010a-tc-10
KM416S4030AT-F10
KM416V4104AS-L6
D4516821
THA04D04
M5M4V16s30
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KM48S8030BT-GL
Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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Original
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PDF
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PC100
KM48S8030BT-GL
NT56V1680A0T
D4516821AG5
KM416S4030BT-GL
81f641642b103fn
KM48S2020CT-GL
D4516821AG5-A107JF
gm72v661641ct7j
TC59S6408BFT80
D4564163G5
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M5M4V16S30CTP
Abstract: M5M4V16s30
Text: <P T3 G*£) í} $} SSsy^âaüaara Wmsúm Preliminary Mitsubishi LSls M 5 M 4 V 1 6 S 3 0 C T P -8 3 , -7 5 , -6 7 , -6 0 16M 2097152 - word by 8-bit Synchrounous DRAM for PC) Some of the contents are subject to change without notice. DESCRIPTION The M5M4V16S30CTP for PC is a 2-bank x 1048576-word x 8-bit Synchronous DRAM,
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M5M4V16S30CTP-83,
2Q97152
M5M4V16S30CTP
1048576-word
83MHz
75MHz
67MHz
M5M4V16s30
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AAK2A
Abstract: M5M4V16s30 M5M4V16S30CTP
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 Jan. '97 M5M4V16S30CTP-10, -12, -15 16M (2-BANK x 1048576-WQRD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M4V16S30CTP is a 2-bank x 1048576-word x 8bit Synchronous DRAM, with LVTTL interface. A ll inputs
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M5M4V16S30CTP-10,
1048576-WQRD
M5M4V16S30CTP
1048576-word
100MHz,
100MHz
83MHz
67MHz
AAK2A
M5M4V16s30
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M5M4V16S30CTP
Abstract: M5M4V16S40CTP M5M4V16s30 M5M4V16S30CTP-10
Text: •SUPER HIGH SPEED DYNAMIC RAMs Memory Ciassfication capacity Memory Configuration 4Mx4 2Mx8 16M 4Mx4 2Mx8 Synchronous Dynamic RAM 1Mx16 16Mx4 64M BMxS 4Mxl6 Max. access time Typ. :■ T»!» Ifo. power dissipation . ns 5 6 B 5 6 8 8 8 9 8 8 9 8 8 9 6 7
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MSM4S16S21CTP-7
MSM4S16S
21CTP-8
M5M4SI6521CTP-I0
M5M4S16S31CTP-7
M5M4S16S31
M5M4S16S31CTP-10
M5M4V16S20CTP-10
M5M4V16S20CTP-12
M5M4V16S20CTP-1S
M5M4V16S30CTP
M5M4V16S40CTP
M5M4V16s30
M5M4V16S30CTP-10
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M5M4V16S30DTP
Abstract: M5M4V16S40 M5M4V16s30
Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)
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6S20DTP-7
097152-W
1048576-WORD
M5M4V16S20DTP
152-word
M5M4V16S30DTP
576-word
M5M4V16S40DTP
288-word
16-bit.
M5M4V16S40
M5M4V16s30
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MH2V645CZJJ-6
Abstract: MH2V64CZJJ-6 MH4V6445AXJJ-6 MH4V6445AXJJ6 M5M4V16s30
Text: • 168 pin 8 BYTE-BUFFERED DIMM Continued ' Memory capacity [Bit] 576M Bit Configuration {Word X Bit) Power supply voltage Load tC • Outward dimensions Contact W X H X D (m m ) natine M5M467800AJx9 1 3 3.35X 3!.75X 4.6 M5M465800AJx9 133.35X31.75X4.6 M5M467805AJX9
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35X31
35X25
M5M467800AJx9
M5M465800AJx9
8Mx72
M5M467805AJX9
M5M465805AJx9
M5M467400AJx18
1152M
MH2V645CZJJ-6
MH2V64CZJJ-6
MH4V6445AXJJ-6
MH4V6445AXJJ6
M5M4V16s30
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M52777SP
Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30
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2SA1115
2SA1235
2SA1235A
2SA1282
2SA1282A
2SA1283
2SA1284
2SA1285
2SA1285A
2SA1286
M52777SP
M54630P
M38881M2
m59320
57704L
M38173M6
SF15DXZ
M34236
m37204m8
54630p
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M5M4V16s30
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 1.0 J a n . '97 M5M4V16S20CTP-10, -12, -15 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION The M5M4V16S20CTP is a 2-bank x 2097152-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and
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OCR Scan
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M5M4V16S20CTP-10,
2097152-WORD
M5M4V16S20CTP
100MHz,
100MHz
83MHz
67MHz
M5M4V16s30
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M5M4V16s30
Abstract: M5M4V16S30CTP interleave M5M4S16S30CTP M5M4S16S30CTP-10
Text: 7 h :7S] S>îs Sg ©» SSsy ^ssiSwirs Mitsubishi LSIs yswsfei Prelim inary ¡P s rs S M5M4S16S30CTP-07, -08, -10 16M (2097152 - word by 8-bit ) Synchrounous DRAM S m M s ia j Some o f the contents are subject to change without notice. DESCRIPTION The M5M4S16S30CTP is a 2-bank x 1048576-word x 8-bit Synchronous DRAM.
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M5M4S16S30CTP-07,
M5M4S16S30CTP
1048576-word
150MHz
125MHz
/100MHz
M5M4V16s30
M5M4V16S30CTP
interleave
M5M4S16S30CTP-10
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