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    M5M4V16s30

    Abstract: M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12
    Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S30CTP-10, -12, -15 Jan. '97 16M (2-BANK x 1048576-WORD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz


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    PDF M5M4V16S30CTP-10, 1048576-WORD 100MHz 83MHz 67MHz /64ms 400-mil, 44-pin 44pin M5M4V16s30 M5M4V16S30CTP-10 M5M4V16S30CTP10 M5M4V16S30CTP M5M4V16S30CTP-12 M5M4V16S30CTP12

    KM48S8030BT-GL

    Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


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    PDF PC100 KM48S8030BT-GL nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832

    KM416S4030BT-G10

    Abstract: KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


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    PDF PC100 KM416S4030BT-G10 KM48S2020CT-GL 81F641642B-103FN d4564163g5 S9745-M06 M5M4V16S30DTP gm72v661641ct7j D4564163G5-A10-9JF D4516821AG5 D4516821

    M5M4V16S20CTP

    Abstract: M5M4V16s30 M5M4V16S30CTP M5M4V16S20
    Text: MITSUBISHI LSIs SDRAM Rev. 1.0 M5M4V16S20CTP-10, -12, -15 Jan. '97 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply - Clock frequency 100MHz / 83MHz / 67MHz


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    PDF M5M4V16S20CTP-10, 2097152-WORD 100MHz 83MHz 67MHz /64ms 400-mil, 44-pin 44pin M5M4V16S20CTP M5M4V16s30 M5M4V16S30CTP M5M4V16S20

    KM48S2020CT-G10

    Abstract: hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30
    Text: R E L I A B I L I T Y A N D 6 C O M P A T I B I L I T Y Reliability and Compatibility Price is not an issue, make sure the one you are having with excellent reliability and compatibility. T o insure the product quality, the rigorous tested before product shipping is


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    PDF 10BaseT 100BaseTx XJ4336J FMC-560 3C563C-TP APA-1460A PRD-250WN KM48S2020CT-G10 hy57v168010a HY57V168010ATC10 en210b HY57V168010a-tc-10 KM416S4030AT-F10 KM416V4104AS-L6 D4516821 THA04D04 M5M4V16s30

    KM48S8030BT-GL

    Abstract: NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5
    Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.


    Original
    PDF PC100 KM48S8030BT-GL NT56V1680A0T D4516821AG5 KM416S4030BT-GL 81f641642b103fn KM48S2020CT-GL D4516821AG5-A107JF gm72v661641ct7j TC59S6408BFT80 D4564163G5

    M5M4V16S30CTP

    Abstract: M5M4V16s30
    Text: <P T3 G*£) í} $} SSsy^âaüaara Wmsúm Preliminary Mitsubishi LSls M 5 M 4 V 1 6 S 3 0 C T P -8 3 , -7 5 , -6 7 , -6 0 16M 2097152 - word by 8-bit Synchrounous DRAM for PC) Some of the contents are subject to change without notice. DESCRIPTION The M5M4V16S30CTP for PC is a 2-bank x 1048576-word x 8-bit Synchronous DRAM,


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    PDF M5M4V16S30CTP-83, 2Q97152 M5M4V16S30CTP 1048576-word 83MHz 75MHz 67MHz M5M4V16s30

    AAK2A

    Abstract: M5M4V16s30 M5M4V16S30CTP
    Text: MITSUBISHI LSIs SDRAM Rev. 1.0 Jan. '97 M5M4V16S30CTP-10, -12, -15 16M (2-BANK x 1048576-WQRD x 8-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M5M4V16S30CTP is a 2-bank x 1048576-word x 8bit Synchronous DRAM, with LVTTL interface. A ll inputs


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    PDF M5M4V16S30CTP-10, 1048576-WQRD M5M4V16S30CTP 1048576-word 100MHz, 100MHz 83MHz 67MHz AAK2A M5M4V16s30

    M5M4V16S30CTP

    Abstract: M5M4V16S40CTP M5M4V16s30 M5M4V16S30CTP-10
    Text: •SUPER HIGH SPEED DYNAMIC RAMs Memory Ciassfication capacity Memory Configuration 4Mx4 2Mx8 16M 4Mx4 2Mx8 Synchronous Dynamic RAM 1Mx16 16Mx4 64M BMxS 4Mxl6 Max. access time Typ. :■ T»!» Ifo. power dissipation . ns 5 6 B 5 6 8 8 8 9 8 8 9 8 8 9 6 7


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    PDF MSM4S16S21CTP-7 MSM4S16S 21CTP-8 M5M4SI6521CTP-I0 M5M4S16S31CTP-7 M5M4S16S31 M5M4S16S31CTP-10 M5M4V16S20CTP-10 M5M4V16S20CTP-12 M5M4V16S20CTP-1S M5M4V16S30CTP M5M4V16S40CTP M5M4V16s30 M5M4V16S30CTP-10

    M5M4V16S30DTP

    Abstract: M5M4V16S40 M5M4V16s30
    Text: SDRAM Rev. 1.03E . «* „ 16M Synchronous DRAM „„ M5M4V1 6S20DTP-7,-8A,-8,-1 0 (2-BANK x 2097152-W ORD x 4-BIT) P relim inary M 5 M 4 V 1 6 S 3 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2-BANK x 1048576-WORD x 8-BIT) M IT S U B IS H I L S Is M 5 M 4 V 1 6 S 4 0 D T P - 7 , - 8 A , - 8 , - 1 0 (2 - b a n k x 5 2 4 2 8 8 - w o r d x 16 -b it)


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    PDF 6S20DTP-7 097152-W 1048576-WORD M5M4V16S20DTP 152-word M5M4V16S30DTP 576-word M5M4V16S40DTP 288-word 16-bit. M5M4V16S40 M5M4V16s30

    MH2V645CZJJ-6

    Abstract: MH2V64CZJJ-6 MH4V6445AXJJ-6 MH4V6445AXJJ6 M5M4V16s30
    Text: • 168 pin 8 BYTE-BUFFERED DIMM Continued ' Memory capacity [Bit] 576M Bit Configuration {Word X Bit) Power supply voltage Load tC • Outward dimensions Contact W X H X D (m m ) natine M5M467800AJx9 1 3 3.35X 3!.75X 4.6 M5M465800AJx9 133.35X31.75X4.6 M5M467805AJX9


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    PDF 35X31 35X25 M5M467800AJx9 M5M465800AJx9 8Mx72 M5M467805AJX9 M5M465805AJx9 M5M467400AJx18 1152M MH2V645CZJJ-6 MH2V64CZJJ-6 MH4V6445AXJJ-6 MH4V6445AXJJ6 M5M4V16s30

    M52777SP

    Abstract: M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p
    Text: REFERENCE LIST T ype Page 2 S A 1 115 2SA1235 2 SA1235A 149 2 SC2237 *★ 2SA1282 2SA1282A 103 2 S C 5 1 25 149 2 S C 5 1 68 150 2 SC2320 150 2 SC 2320L 149 2 SC2538 2SA1283 2SA1284 2SA1285 149 2S C 2 6 03 149 2S C 2 6 27 2SA1285A 149 2 SC2628 2SA1286 153 AS 30


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    PDF 2SA1115 2SA1235 2SA1235A 2SA1282 2SA1282A 2SA1283 2SA1284 2SA1285 2SA1285A 2SA1286 M52777SP M54630P M38881M2 m59320 57704L M38173M6 SF15DXZ M34236 m37204m8 54630p

    M5M4V16s30

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs SDRAM Rev. 1.0 J a n . '97 M5M4V16S20CTP-10, -12, -15 16M (2-BANK x 2097152-WORD x 4-BIT) Synchronous DRAM Some of contents are subject to change without notice. DESCRIPTION The M5M4V16S20CTP is a 2-bank x 2097152-word x 4-bit Synchronous DRAM, with LVTTL interface. All inputs and


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    PDF M5M4V16S20CTP-10, 2097152-WORD M5M4V16S20CTP 100MHz, 100MHz 83MHz 67MHz M5M4V16s30

    M5M4V16s30

    Abstract: M5M4V16S30CTP interleave M5M4S16S30CTP M5M4S16S30CTP-10
    Text: 7 h :7S] S>îs Sg ©» SSsy ^ssiSwirs Mitsubishi LSIs yswsfei Prelim inary ¡P s rs S M5M4S16S30CTP-07, -08, -10 16M (2097152 - word by 8-bit ) Synchrounous DRAM S m M s ia j Some o f the contents are subject to change without notice. DESCRIPTION The M5M4S16S30CTP is a 2-bank x 1048576-word x 8-bit Synchronous DRAM.


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    PDF M5M4S16S30CTP-07, M5M4S16S30CTP 1048576-word 150MHz 125MHz /100MHz M5M4V16s30 M5M4V16S30CTP interleave M5M4S16S30CTP-10