Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5187BP, J-15, -20, -25 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CM0S STATIC RAM DESCRIPTION P IN This is family of 65536-word by 1-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These
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M5M5187BP,
65536-word
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSI* M5M5187BP,J-15,-20,-25 6 5 5 3 6 - B IT 6 5 5 3 6 - WORD BY l-B IT C M O S STATIC RAM DESCRIPTION This is fa m ily o f 65536-word by 1-bit static RAMs, fa b ri cated w ith the high-performance CMOS silicon-gate MOS process and designed fo r high-speed application. These
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M5M5187BP
65536-word
M5M5187BP,
500mV
5187BP,
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M5187BP, J-15, -20, -25 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is fam ily of 65536-word by 1-bit static RAMs, fabri cated w ith the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These
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M5M5187BP,
65536-word
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509Y
Abstract: 65536
Text: VTSUB'SH' './',1s M5M5187BP, J-15,-20 ,-25 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION Fh s is family of 65536-word by 1-bit static RAMs, fabricated «i1h the high-performance CMOS silicon-gate MOS process ir t d designed for high-speed application. These devices
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M5M5187BP,
65536-BIT
65536-WORD
W5M5187BP,
300mW
509Y
65536
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MB81C71-55
Abstract: LH5161-25 MCM6287-35 mcm6287 KHB165L-35 KM6165-45 KM6165L-25 KME165-35 M5M5187AP-25 MB81C71
Text: - 66 - 4 K X m £ ît * CC TAAC max ns) TCAC (ns) TOE max (ns) CMOS y A f- > TOH rain (ns) TOD max (ns) S t a t i c ;/ TWP min (ns) RAM ( 6 5 5 3 6 x 1 ) tt n < TDS min (ns) TDH (ns) TWD nin (ns) TWF max (ns) V D D or V C C (V) 22PIN 1DD max <mA) 6287 À
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65536x1)
IMS1601P/S/H-55L
IMS1601P/S/W-
KM6165
KME165-35
MT5C6401-35
P4C187-10
P4C187-12
P4C187-15
P4C187-20
MB81C71-55
LH5161-25
MCM6287-35
mcm6287
KHB165L-35
KM6165-45
KM6165L-25
M5M5187AP-25
MB81C71
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 5 1 8 7 B P , J - 1 5 ,-2 0 ,- 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices
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65536-BIT
65536-WORD
--A14
M5M5187BP,
20ead
500mV
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Untitled
Abstract: No abstract text available
Text: b 2 4 ti a E S 0024302 f l 2b « 1 1 1 1 1 M M 5 MITSUBISHILSIs 5 1 8 B 7 P , J - 1 5 , - 2 , - 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is fam ily o f 6 5 5 3 6 -w o rd by 1-bit static R AM s, fabricated PIN CONFIGURATION (TOP VIEW)
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65536-BIT
65536-WORD
500mV
M5M5187BP,
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M5M5187
Abstract: VCC10A
Text: MITSUBISHI LSIs M 5 M 5 1 8 7 B P , J -1 5 , - 2 0 , - 2 5 6 5 5 3 6 - B I T 6 5 5 3 6 -W O R D BY l-B IT C M O S STATIC RAM DESCRIPTION This is fa m ily o f 65536-word by 1-bit static RAMs, fa b ri cated w ith the high-performance CMOS silicon-gate MOS
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M5M5187BP,
65536-BIT
65536-WORD
500mV
M5M5187
VCC10A
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c5v2
Abstract: No abstract text available
Text: MITSUBISHI LS Is M 5 M 5 1 8 7 B P , J - 1 5 , - 2 0 , - 2 5 65536-BIT 65536-WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabricated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These devices
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65536-BIT
65536-WORD
M5M5187BP,
300mW
500mV
25T47
c5v2
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 8 7 B P , J - 1 5 , - 2 0 , - 2 5 6 5 5 3 6 -B IT 6 5 5 3 6 - WORD BY 1-BIT CMOS STATIC RAM DESCRIPTION This is family of 65536-word by 1-bit static RAMs, fabri cated with the high-performance CMOS silicon-gate MOS process and designed for high-speed application. These
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65536-word
M5M5187BP,
M5M5187BP
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mcm2018a
Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
mcm2018a
sun hold RAS 0610
cqq 765 RT
IC HX 710B
U256D
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MB81C71-55
Abstract: MCM6287-25 KM6165-45 KM6165L-25 KME165-35 MB8171 MB8171-70 MB81C71A-25 MB81C71A-35 6287 64k x 1
Text: - 62 - 6 4 K X SL % tì £ OC TAAC •ax ns) TCAC max (ns) MB81C71A-25 FUJITSU 0—70 25 25 MB81C71A-35 FUJITSU 0—70 35 35 MB8171-55 FUJITSU 0—70 55 55 MB8171-70 FUJITSU 0—70 70 70 TOE max (ns) 4 n/CM OS •/ f- > TOH ■in (ns) 5 / TOD ■ax (ns)
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65536x1)
22PIN8171
MB81C71A-25
MB81C71A-35
MB8171
MB8171-70
MT5C6401-35
P4C187-10
P4C187-12
P4C187-15
MB81C71-55
MCM6287-25
KM6165-45
KM6165L-25
KME165-35
6287 64k x 1
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sun hold RAS 0610
Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Text: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information
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A16685-7
EMTR1147
sun hold RAS 0610
oki Logic
Motorola transistor 7144
MSC2304
M5M41000
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