Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131Q72-WORD BY8-BIT CM0S STATIC RAM DESCRIPTION The M5M51T08AP, FP, VP, RV are a 1048576- bit CMOS static RAM organized as 131072 word by 8 - bit which are fabricated using high-performance quadruple-polysilicon
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M5M51T08AP
RV-55SL
1048576-BIT
131Q72-WORD
M5M51T08AP,
32-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P , V P , R p ftC IJ M I N A R Y No«e Th- V - 1 2 V S L . - 1 5 V S L 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM ; u S « ,“« ct'“n9e' DESCRIPTION The M 5M 51T08AFP,VP,RV are a 1048576-bit C M O S static RAM
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1048576-BIT
131072-WORD
51T08AFP
120ns
M5M51T08AFP0
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M5M51008AFP
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51008AFP,VP, RV-12VL,-15VL,-12VLL,-15VLL 1048576-BIT 131Q72-WORD BY 8-BIT CM0S STATIC RAM POWER DOWN CHARACTERISTICS (1) ELECTRICAL CHARACTERISTICS (Ta = 0 ~ 7 0 X I. unless otherwise noted) Parameter Symbol V cccpo) Power down supply voltage
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M5M51008AFP
RV-12VL
-15VL
-12VLL
-15VLL
1048576-BIT
131Q72-WORD
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1T 0 8 A P ,F P ,V P ,R V are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 131072 word by 8 -b it which are fabricated
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M5M51T08AP
RV-70SL
-85SL
-10SL
-12SL
1048576-BIT
131072-WORD
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x -12sl
Abstract: No abstract text available
Text: • bSMRf l es DD24S74 D3 1 ■ M IT I MITSUBISHILSls M5M51 T08AP,FP,VP,RV-70SL,-85SL,-10SL,-12SL 1048576-BIT 131072-WQRD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5M 51T08AP,FP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072 word by 8 - bit which are
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DD24S74
M5M51
T08AP
RV-70SL
-85SL
-10SL
-12SL
1048576-BIT
131072-WQRD
51T08AP
x -12sl
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M5M51T08ARV
Abstract: AFP10
Text: MITSUBISHI LSIs M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION Thd M5M51T08AP, FP, VP, RV are a 1046576 bit CMOS state RAM organized as 131072 word by 8 - bit which are fabrcated using high - performance quadruple polysilicon
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M5M51T08AP
RV-55SL
1048576-BIT
131072-WORD
M5M51T08AP,
32-pin
M5M51T08ARV
AFP10
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Untitled
Abstract: No abstract text available
Text: L.HHTfiES 0Q 242L i? RTl M ITSU BISHI LS Is • ■ M IT I M5M51T08AP,FP,VP,RV-55SL 1048576-BIT 131072-WORD BY 8-BIT CM0S STATIC RAM DESCRIPTION The M 5 M 5 1T 0 8A P , FP, VP, RV are a 1 0 4 8 5 7 6 - bit CMOS PIN CONFIGURATION (TOP VIEW) static RAM organized as 1 3 1072 w ord by 8 - b it w hich are
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M5M51T08AP
RV-55SL
1048576-BIT
131072-WORD
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M 5 M 5 1 T 0 8 A F P ,V P ,R V -1 2 V S L ,-1 5 V S L _1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM No«-0 ‘ ¿met'* r': DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using
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1048576-BIT
131072-WORD
M5M51
T08AFP
1048576-bit
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSlS M5M51T08AFP,VP,RV-85VSL,-10VSL p H U lS N A R V 1048576-BIT 131072-WQRD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M5M51 T08AFP,VP,RV are a 1048576-bit CMOS static RAM organized as 131072-word by 8-bit which are fabricated using high-performance quadruple-polysilicon CMOS technology. The
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M5M51T08AFP
RV-85VSL
-10VSL
1048576-BIT
131072-WQRD
M5M51
T08AFP
131072-word
M5M51T08AVP
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M51 T08AFP,VP,RV-85VSL,-1 OVSL p R tì-' 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM SO'" 1 1‘ DESCRIPTION The M 5M 51T08A FP,VP,RV are a 1048576-bit C M O S static RAM PIN CONFIGURATION (TOP VIEW) organized as 131072-w ord by 8 -bit which are fabricated using
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M5M51
T08AFP
RV-85VSL
1048576-BIT
131072-WORD
51T08A
1048576-bit
131072-w
32-pin
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