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    Untitled

    Abstract: No abstract text available
    Text: M60UFG M80UFG M100UFG HIGH VOLTAGE RECTIFIERS 100nS RECOVERY AXIAL LEADED HERMETICALLY SEALED V rw m RR in. mm .300(7.62) Max. = 6 0 0 0 -10000V 25mA = 100nS 1.00(25.4) Min. .130(3.30) Max. •020±.003 (,50±.08) ELECTRICAL CHARACTERISTICS AND MAXIMUM RA1"INGS


    OCR Scan     		PDF 100nS M60UFG M80UFG M100UFG -10000V 100nS

    1N6528

    Abstract: M25UFG RA641 58A2 1N6535 RA644 11n65 RM109 M50FG RM117
    Text: T " 0 3 - 0 9 T ' O S - f t I INCH-PQUND I MI L -S-19500/577 5 Ap r i l 1989 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER, FAST RECOVERY, HIGH VOLTAGE TYPES 1N6528 THROUGH 1N6535 JANTX, JANTXV, AND JANS This specification is approved for use by all Depart­


    OCR Scan     		PDF MIL-S-19500/577 1N6528 1N6535 MIL-S-19500. RA642 RA645 RM121 RM131 M60FG M60UFG M25UFG RA641 58A2 RA644 11n65 RM109 M50FG RM117