42EF-P2MPB-F4

Abstract: 42GRU-9202-QD 42EF-P2MPB-A2 42EF-D1MNAK-a2 42EF-D1MPAK-F4 42EF-E1EZB-F4 42GRu-9203-QD 42GRU-9002-QD 42GRU-9001 42GRP-9002-QD
Contextual Info: PHOTOSWITCHR Photoelectric Sensors and Programmable Controller Interface Manual 1771 PLCR I/O Part I Preferred Compatibility Ç 2 PLCR 1771 Inputs Important User Information The examples and diagrams in this manual are included solely for illustrative purposes. Because of the many variables and requirements associated with

IN4148

Abstract: ELAN EM78M612 EM78M612 EPVP6200 gr17 DIP SWITCH 10 PIN IN4-148 1V111 GPIO90 GPIO61
Contextual Info: ELAN Microelectronics Corp. Confidential ePVP VFD Controller SOLUTION ePVP Series Target Board User Manual V2.1 1. Apply to the development board of series IC number ALL ePVP Series IC ex. ePVP6300, ePVP6200 ,ePV6316, ePVP6810 USB I/F VFD Panel socket RS-232C

moeller DIL 3M

Abstract: DILM150-XMV dilm80 PKZM4-63 PKZM04 Moeller dil 2m DILM15-10 moeller dil m17 PKZM0-25 PKZM0-32
Contextual Info: : Efficient solutions for motor control The complete range of contactors, efficient motor-starters and variable speed drives for the motor circuit. New simple to install solutions based on clever communication. DIL contactors Product information DIL M motor contactors

ISO11359-2

Abstract: PPS GF40 ISO527-1 ASTM d792 7340a 1140A6 pa 66 gf Polyphenylene sulfide OF-1008 PPS ISO179 IEC 60093
Contextual Info: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming

DILM15-01

Abstract: DIL M50 moeller dil m17 moeller dil Moeller dil 2m moeller DIL 3M PKZM 1-10 PKZM4-50 MOELLER PKZM PKZM0-25
Contextual Info: : Efficient solutions for motor control The complete range of contactors, efficient motor-starters and variable speed drives for the motor circuit. New simple to install solutions based on clever communication. DIL contactors Product information DIL M motor contactors

ISO11359-2

Abstract: 1140A1 ASTM d792 Polyphenylene sulfide OF-1008 PPS 1130a1 modulus Fortron 1140L4 1140A64 1140A6 1140L4
Contextual Info: SENSORS & CONTROLS PRODUCTS June, 2006 Bourns Manufacturers Representatives Corporate Distributor Product Managers Americas Sales Team Asia Sales Team Europe Sales Team Model EN Optical Encoder Series Material Change Sensors and Controls Division will be changing the plastic material used in molding the LED trimming

Contextual Info: DW8.N0. CONFIGURATION .560- 2932-6021 ELECTRICAL: 50 Nominal Impedance Ohm« . DC TO 18.0 Frequency Range (Ghz) _ 335 Voltage Rating (Max.VRMS). 1.05*.005 X FGHz VSWR (Max.) .04 Insertion Loes (db Max.)_ 60 DB-FGHz RF Leakage (Min. dB down). RF High Potential (max.VRMS)._ 670 AT 5 MHa

Contextual Info: ENG. FILE COPY CONF IGURAT ION DWG.NO. t o l e r a n c e «-/-.q o s u n l e s s o t h e r w i s e .s p e c i f i e d SF2903-6097 ELECTRICAL: 50 NOMINAL IMPEDANCE (OHMS) _ DC TO 18.0* FREQUENCY RANGE (GHZ)_ 335 * VOLTAGE RATING (MAX.VRMS) 1.07*.015 X FGHz

NEC 2501

Abstract: TC-2178 resistor UJ marking
Contextual Info: DATAEvaluation SHEET AdLib OCR IVEC ELECTRON DEVICE SILICON TRANSISTOR- GN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE 2.1+0 .1 Maximum Voltages and Cur ents T, 25 OC

H100I

Abstract: marking IAY
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE FN1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR MINI MOLD FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE o—W V 2.8 ± 0.2 Rl = 22 k£2 R1 0.65: g;|5 1.5 • Complementary to FA1 F4Z

M65 IC

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N1F4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • in millimeters Resistor Built-in TYPE Ri = 2 2 k S l O — VW R1 • Complementary to G A 1F4Z ABSOLUTE M A X IM U M R ATIN G S

M65 IC

Contextual Info: DATA SHEET NEC / BKTRON DEVICE / SILICON TRANSISTOR / _ _ . _ _ G N 1F4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FE A TU R E S • 9C Resistor Built-in T Y P E O —A A / V " R i - 22 k i i «I Ô E • Complementary to G A 1 F 4 Z

Contextual Info: SILICO N TRANSISTOR FN 1F4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FE A TU R E S PACKAGE DIMENSIONS • in Resistor B u ilt-in TYPE B O—V v V Ri = 22 kSÌ «1 • C om plem entary to F A 1 F 4 Z A B S O LU T E M A X IM U M R A T IN G S

0030F

Abstract: W25Q32B AXH marking marking CODE S13 m6501 25q3 25q32
Contextual Info: W25Q32BW 32M-BIT 1.8V SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI -1- Publication Release Date: August 24, 2008 Preliminary - Revision A W25Q32BW Table of Contents 1. GENERAL DESCRIPTION . 5

BUK437-600B

Abstract: BUK437-600A BUK437 TNT sot
Contextual Info: BUK437-600A BUK437-600B Philips Components PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode liekJ-eftect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

BB453

Abstract: BF5458 D103D BF545A BF545B BF545C MSB003 UBB467 SFs SOT23 dk transistor
Contextual Info: • P h i l i p bb53T31 002355^ 113 ■ APX p Product specification N-channel silicon junction field-effect transistor FEATURES N AriER b «>■£/« BF545Aî BF545Bî BF545C QUICK REFERENCE DATA • Low leakage level typ. 500 fA • High gain ±vDS • Low cut-off voltage (max. 2.2 V

MBB464

Abstract: MBB081 BF545B TRANSISTOR BR BF545A BF545C MSB003 m67 transistor transistor 313 sot23 B3E MARKING SOT23-6
Contextual Info: Philips Semiconductors bbS3T24 G072blG M57 N-channel silicon junction field-effect transistor • S I C 3 ^_^£oductspecif|catlon BF545A; BF545B; BF545C napc/philips s e m c o n j FE A T U R E S b3E T> Q UICK R E F E R E N C E DATA • Low leakage level typ. 500 fA

Contextual Info: WAY 1 0 JSJ3 VME 1210/1220 June 1990 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter • VME 1220 provides two device chip set for non-slot 1

TC-6252

Abstract: TC6252 WJ M64
Contextual Info: - r S • — h * SEC i ï r / V C om po un d Transistor Î 7 GN1F4Z ^ 4f J i ^ I U O y< yf 7 l*3 Ü X Î É tf l £ R i = 2 2 L X ^ Î 1 ( - P - Ì Ì ! m m k Q ) B O O o G A 1F 4 Z 3 t > - 7° U / 9 > 'J T l È f f l T ' ë ì e t ( T a — 25 °C) m

Contextual Info: VME 1210/1220 A 3 L May 1989 Slot 1 and Non-Slot 1 VMEbus Master Controllers Distinctive Features_ • VME 1210 provides two device chip set for slot 1 master bus controller and single level arbiter Applications_

imt 901 Q

Abstract: imt 901
Contextual Info: SYSTEM CLOCK CHIP IMISC417 INTL M I C R O C I R C U I T S INC HfiE » • May 1992 Preliminary Hösoma ooG GSia om « im t CMOS LSI PLL FREQUENCY SYNTHESIZER T PRODUCT FEA TURES - S O - 2 3 PRODUCT DESCRIPTION ■ Generates all Essential Clock Signals for the

irf 3905

Abstract: pj 0266 TC-6059 IRF 5350 TC-605 IRF 544 T108 transistor sms 2t lj11 irf 346
Contextual Info: NEC i ï r i \ ^ — 5 f ♦ h Compound Transistor f x FN 1F4Z $ f t O ' M 7 x £i £ | * J / E L T v ^ î ë 1 - c 2 . 8 ± 0 .2 R i= 2 2 1.5 kQ 0 . 65 io.i 5 O F A 1 F 4 Z t =? > 7 ° ' ) S > - 9 ') T fê ( T a Il = 2 5 °C ) g 3 u ? j W& Æ ^ t& # \tL

Contextual Info: VME 2000 VMEbus / z x _ ^ T • C Slave Module Interface Device December 1990 Distinctive Features_ Applications_ • • Provides logic, high current drive and buffers for slave module to VMEbus interface in 300 mil 24 pin DIP or 28

1N5628

Abstract: 12115X marking AB SOD123 1N5828
Contextual Info: 1N5826 1N5827 1N5828 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1N582S and 1N5828 are Motorola Preferred Devices Designer’s Data Sheet Power Rectifiers SCHOTTKY BARRIER RECTIFIERS . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode.