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    IR6000

    Abstract: IR-6000
    Text: Preliminary Data Sheet 6.025 INTERNATIONAL RECTIFIER IO R IR6000 INTELLIGENT HIGH-SIDE □MOS POWER SWITCH Avalanche Rated 60 Volts/1 OOmft Product Summary General Description The IR6000 is a monolithic, fully self protected high side DMOS switch. Designed primarily for solenoid and


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    IR6000 IR6000 goes31, D-6380 005136b IR-6000 PDF

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while


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    IRGMC30U IRGMC30UD IRGMC30UU O-254 4flS5455 001flb73 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4BSS4S2 DD1S13D 131 • INR PD-9.738 International i»R Rectifier _IRFI634G HEXFET Pow er M O S F E T INTERNATIONAL RECTIFIER • • • • • Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating


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    DD1S13D IRFI634G O-220 M65S452 001513S PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 125181 IB International Rectifier sn 73s s e r ie s INVERTER GRADE THYRISTORS Stud Version Features 175A • All diffused design ■ C enter am plifying gate ■ G uaranteed high dv/dt ■ G uaranteed high di/dt ■ High surge current ca p a bility


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    ST173S 13-Frequency D-458 ST173S 002723b D-459 PDF

    E78996

    Abstract: E78996 rectifier module B40HF R40H
    Text: International ^R ectifier • INTERNATIONAL RECTIFIER s e r ie s DIODES bSE ]> B40HF/B40HH Power Modules in B-package 40A Features ■ ■ ■ ■ ■ ■ ■ 4A55M52 QQlhSMh Q1T ■ Electrically isolated base plate 3500V RMS Available up to 1200 V RRM, V QRM


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    lfl55M52 E78996 B40HF. /B40HH. E78996 rectifier module B40HF R40H PDF

    Untitled

    Abstract: No abstract text available
    Text: Provisional Data Sheet No. PD-9.1312 International !Rectifier [TOR IRHF9230 HEXFET TRANSISTOR -200 Volt, 0.8Û , RAD HARD HEXFET International Rectifier's P-Channel RAD HARD technol­ ogy HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total radiation


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    IRHF9230 PDF