M66212
Abstract: M66212P
Text: M IT S U B IS H I <DIGITAL A S S P M 66212P /F P M 66213P /F P 2 —► l - L I N E Ì X 5) DATA S E L E C T O R DESCRIPTION The M66212P/FP and M66213P/FP are sem iconductor in PIN CONFIGURATION TOP VIEW) tegrated circuits consisting of five 2-line to 1-line data
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66212P
66213P
M66212P/FP
M66213P/FP
256K-or
M66212
M66213
66213P/FP
M66212P/FP
M66213P/FP
M66212P
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256KO
Abstract: M66212P 20P2N-A 251C
Text: M ITS U B IS H I <DIGITAL ASSP> M66212P/FP M66213P/FP 2 — 1 -L IN E { X 5 D A T A S E L E C T O R DESCRIPTION The M66212P/FP and M66213P/FP are semiconductor in tegrated circuits consisting of five 2-line to 1-line data selectors/multiplexers. PIN CONFIGURATION TOP VIEW)
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M66212P/FP
M66213P/FP
M66213P/FP
50juW/package
256K-or
M66212/M66213.
256KO
M66212P
20P2N-A
251C
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Untitled
Abstract: No abstract text available
Text: M IT S U B IS H I CDIGITAL ASSP> M 6 6 2 1 2 P /F P M 6 6 2 1 3 P /F P 2 — 1 -L IN E DESCRIPTION T h e M 6 6 2 1 2 P /F P and M 6 6 2 1 3 P /F P a re sem iconductor in te g ra te d circuits consisting of five 2 -lin e to 1 -lin e X 5 DATA S E L E C T O R
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44256 ram
Abstract: 44256
Text: MITSUBISHI LSIs MH25616PNA-10,-12 4194304-BIT 262144-W 0RD BY 16-BIT PSEUDO-PSEUDO STATIC RAM MODULE DESCR IPTIO N PIN C O N F IG U R A T IO N (TOP VIEW ) The M H 25616P N A is 2 6 21 4 4 word x 16 bit P S EU D O P S E U D O static R A M and consist of four industry standard
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MH25616PNA-10
4194304-BIT
62144-W
16-BIT
25616P
/MH25616PNA
4194304-B
44256 ram
44256
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <DIGITAL ASSP> M 66212P/FP M 66213P/FP 2 —1-LIN E{X5 D ATA SELECTOR DESCRIPTION T h e M 6 6 2 1 2 P /F P and M 6 6 2 1 3 P /F P a re sem ico nductor in te g ra te d circuits consisting of fiv e 2 -lin e to 1 -lin e PIN CONFIGURATION TOP VIEW)
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66212P/FP
66213P/FP
256K-or
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI <DIGITAL ASSP> M 66200A P/ AFP DRAM C O N T R O LLE R DESCRIPTION The M66200AP/AFP is a semiconductor integrated circuit for 256K- and 1M-bit CMOS-process DRAM controllers. The device can control all necessary DRAM signals, includ ing MPU, RAS and CAS memory control signals of signals
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6200A
M66200AP/AFP
M66210,
M66211,
M66212
M66213.
16-bit
256KX1,
64KX1,
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44256 ram
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH25616PNA-10,-12 4 1 9 4 3 0 4 -B IT 2 6 2 1 4 4 -W 0 R D BY 16-BIT PSEUDO-PSEUDO STATIC RAM DESCRIPTIO N The PIN C O N F IG U R A T IO N (TOP V IE W ) M H25616PN A is 2 6 2 1 4 4 w o rd x 16 b it PSEUDO- P S E U D O s ta tic R A M a n d c o n s is t o f f o u r in d u s tr y s ta n d a rd
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MH25616PNA-10
16-BIT
H25616PN
MH25616PNA
44256 ram
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M66212P
Abstract: dram 64kx1 M66210P caso 256KX1 64KX1 64k*1 DRAM m66212
Text: M IT S U B IS H I <DIG ITAL A SSP> M66200AP/AFP DRA M C O N T R O L L E R DESCRIPTION The M 66200AP/AFP is a semiconductor Integrated circuit PIN CONFIGURATION TOP VIEW for 256K- and 1M -blt CM OS-process DRAM controllers. The device can control all necessary DRAM signals, includ
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M66200AP/AFP
24P4D
24P2N-B
M66200AP/AFP
M66210
5DH27
0D2042Ã
M66212P
dram 64kx1
M66210P
caso
256KX1
64KX1
64k*1 DRAM
m66212
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M66210
Abstract: No abstract text available
Text: M IT S U B IS H I <D IG ITA L A SSP> M66200AP/AFP DRAM CONTROLLER DESCRIPTION PIN CONFIGURATION TOP VIEW The M 662 0 0 A P /A F P is a se m ico n d u cto r in te g ra te d circ u it for 256K- and 1 M -b it C M O S -p ro ce ss DRAM co n tro lle rs. The d e v ic e can control all n e ce ssary DRAM signals, in c lu d
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M66200AP/AFP
M66200AP
M66200AFP
M66210,
M66211,
M66213.
M66210
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