RB100A
Abstract: RK36 MA711A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA719
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
120pF
RB100A
RK36
MA711A
RB110c
KS826S04
MA711
MA719
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PDF
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RK36
Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
RK36
RB100A
RB110c
KS826S04
MA711
MA711A
MA719
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PDF
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S3S4M
Abstract: NSQ03A02L S3S6M S1S6M RB100A RK14 RK36 RB031B-40 RB110c KS826S04
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
120pF
S3S4M
NSQ03A02L
S3S6M
S1S6M
RB100A
RK14
RK36
RB031B-40
RB110c
KS826S04
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PDF
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Untitled
Abstract: No abstract text available
Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm (φ0.8) 1.5±0.2 (1.05) 2SA1674+MA720 5 3 4 ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo em u ic t la on te /e st
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UN601
2SA1674
MA720
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UN601
Abstract: 2SA1674 MA720 of IC 4151
Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm M Di ain sc te on na tin nc ue e/ d For DC–DC converter ● 2SA1674+MA720 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 0.6±0.1
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UN601
2SA1674
MA720
UN601
MA720
of IC 4151
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PDF
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UN601
Abstract: No abstract text available
Text: Composite Transistors UN601 Silicon PNP epitaxial planer transistor Tr Silicon schottky barrier diode (Di) Unit: mm For DC–DC converter ● 6 2 5 3 4 0.25±0.1 • Basic Part Number of Element 1 2SA1674+MA720 0.6±0.1 ■ Absolute Maximum Ratings Transistor block
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UN601
2SA1674
MA720
500mA
100mA,
N-50BU
PG-10N
SAS-8130
100mA
UN601
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short
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MA3X720
MA720)
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PDF
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m2w marking
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 10° Unit 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current
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MA3X720
MA720)
m2w marking
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PDF
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a739
Abstract: 75150 MA758 A742 MA732 MA746 MA749 mono preamplifier circuit diagram
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C13 mA720 L-C14 MA732 DECOUPLING 19 kHz FILTER 13 ^ 38 kHz FILT E R 2 19 kHz FILTER 3 12 ^ MPX IN 4 ^ S T ER EO MONO dc 5 □ 6 7 GND Q L-C16 mA742 BIAS L-C17 MA746 3 +in | 4 MEMORY Q ncQ I ! ] STO RAG E ,11 □ - .C O E R
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OCR Scan
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L-C13
mA720
L-C14
MA732
L-C15
L-C16
L-C17
MA746
mA739
a739
75150
MA758
A742
MA732
MA746
MA749
mono preamplifier circuit diagram
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PDF
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S3S4M
Abstract: NSQ03A04 RK36 RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
120pF
S3S4M
NSQ03A04
RK36
RB100A
RB110c
KS826S04
MA711
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PDF
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diode m2w
Abstract: marking M2w m2w marking
Text: MA111 Schottky Barrier Diodes SBD MA720 Silicon epitaxial planer type Unit : mm +0.2 For high-frequency rectification 2.8 –0.3 +0.25 1.5 –0.05 0.65±0.15 0.65±0.15 1.45 0.95 3 +0.1 0.4 –0.05 Fast trr (reverse recovery time), optimum for high-frequency rectifica-
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MA111
MA720
500mA
diode m2w
marking M2w
m2w marking
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PDF
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A1391
Abstract: A788 A742 LC35 Fairchild linear consumer circuits A1394 MA732 MA746 MA749 TBA530
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS LINEAR L-C13 mA720 L-C14 MA732 D E C O U P L IN G 19 kH z FILTER 2 13 ^ 38 kH z FILTE R 3 12 ^ R IG H T O U T 4 11 ^ LEFT OUT 5 10 19 kH z FILTER M PX IN S T E R E O M O N O dc 6 STER EO LAM P 7 8 B IA S GND Q L-C15 L-C16
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OCR Scan
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L-C13
mA720
L-C14
MA732
L-C15
L-C16
L-C17
MA746
L-C35
TBA990
A1391
A788
A742
LC35
Fairchild linear consumer circuits
A1394
MA732
MA746
MA749
TBA530
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PDF
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MA8051
Abstract: MA8047 MA8036 MAB030 MA7130 MA7160 MA7180 MA7200 MA7220 MA7240
Text: - y m MA7130 MA7150 MA7160 MA7180 MA7200 MA7220 MA7240 MA7270 MA7300 MA7330 MA7360 MA7390 MA7430 MA7470 MA7510 MA7560 MA8024 MA8027 MA8030 MA8033 MA8036 MA8039 MA8043 MA8047 MA8051 MA8056 MA8062 MA8068 MA8075 MA8082 MA8091 MA8100 MA8110 MA8120 MA8130 MA8140-M
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OCR Scan
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MA7130
MA7160
MA7180
M81S-3
MA8300
MA8330
-43MAX-I
MA8051
MA8047
MA8036
MAB030
MA7130
MA7160
MA7200
MA7220
MA7240
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PDF
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RB100A
Abstract: RK36 MA701A MA711A RB110c HRW0503A KS826S04 MA701 MA711 MA719
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
120pF
RB100A
RK36
MA711A
RB110c
KS826S04
MA711
MA719
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720)
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Original
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2002/95/EC)
MA3X748
MA748)
MA3X720
MA720)
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PDF
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MA3X720
Abstract: MA720
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo
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Original
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2002/95/EC)
MA3X720
MA720)
MA3X720
MA720
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PDF
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MA3X720
Abstract: MA3X748 MA720 MA748
Text: Schottky Barrier Diodes SBD MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720) • Low forward voltage VF and good rectification efficiency
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Original
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MA3X748
MA748)
MA3X720
MA720)
MA3X720
MA3X748
MA720
MA748
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PDF
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MA3X720
Abstract: MA3X748 MA720 MA748
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720)
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Original
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2002/95/EC)
MA3X748
MA748)
MA3X720
MA720)
MA3X720
MA3X748
MA720
MA748
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PDF
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marking m2w
Abstract: m2w marking MA3X720 MA720
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is
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Original
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2002/95/EC)
MA3X720
MA720)
SKH00079EED
marking m2w
m2w marking
MA3X720
MA720
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PDF
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MA3X720
Abstract: MA720 m2w marking marking M2w
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud pl vi an m m es
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Original
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2002/95/EC)
MA3X720
MA720)
MA3X720
MA720
m2w marking
marking M2w
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PDF
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diode IR 100 2K
Abstract: diode marking 2k
Text: 2SK1606 Schottky Barrier Diodes SBD MA2Z748 Silicon epitaxial planer type Unit : mm For super high-speed switching circuit For small current rectification Anode ● Low VF type of MA720 ● Low VF (forward rise voltage) with high rectification efficiency
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Original
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2SK1606
MA2Z748
MA720
500mA
diode IR 100 2K
diode marking 2k
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PDF
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Sine Wave Generator
Abstract: t 06 marking 59 diodes ir MARKING 103 MA3X720 MA720
Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short
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Original
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MA3X720
MA720)
Sine Wave Generator
t 06 marking 59
diodes ir
MARKING 103
MA3X720
MA720
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PDF
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RK36
Abstract: RB100A RB110c HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
MA71A
RK36
RB100A
RB110c
KS826S04
MA711
MA711A
MA719
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PDF
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RB100A
Abstract: RB110c RK36 MA711A HRW0503A KS826S04 MA701 MA701A MA711 MA719
Text: - & & HRP100 HRW0302A HRW0503A KS826S04 MA701 MA701A MA711 MA711A MA719 MA720 MA735 MA736 MA737 MA738 MA739 MA779 MA789 NSQ03A02L NSH03A10 NSQ03A04 NSQ03A06 R B 0 3 1 B —4 0 RB100A RB110C RB160L-40 RB400D RB411D RK13 R K 14 R K 16 RK19 « Vr s m V 25 BÍL
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OCR Scan
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HBP100
HRH0302A
100pF
HRW0503A
KS826S04
MA701
210pF.
MA701A
MA711
120pF
RB100A
RB110c
RK36
MA711A
KS826S04
MA711
MA719
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PDF
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