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    Panasonic Electronic Components MA3X72000L

    DIODE SCHOTT 40V 500MA MINI3-G1
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    Bristol Electronics MA3X72000L 1,094 7
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    Quest Components MA3X72000L 875
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    MA3X720 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA3X720 Panasonic Silicon epitaxial planar type Original PDF
    MA3X72000L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 40V 0.5A MINI3 Original PDF

    MA3X720 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720)

    m2w marking

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 1.9±0.1 0.4±0.2 2.90+0.20 –0.05 10° Unit 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original     		PDF MA3X720 MA720) m2w marking

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720)


    Original     		PDF 2002/95/EC) MA3X748 MA748) MA3X720 MA720)

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z7480G Silicon epitaxial planar type For super high speed switching For small current rectification • Package ■ Features • Low VF type of MA3X720 • Low forward voltage VF and good rectification efficiency


    Original     		PDF 2002/95/EC) MA2Z7480G MA3X720

    MA3X720

    Abstract: MA720
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ Th an W is k y Th e a pro ou Fo an po du fo


    Original     		PDF 2002/95/EC) MA3X720 MA720) MA3X720 MA720

    MA3X720

    Abstract: MA3X748 MA720 MA748
    Text: Schottky Barrier Diodes SBD MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720) • Low forward voltage VF and good rectification efficiency


    Original     		PDF MA3X748 MA748) MA3X720 MA720) MA3X720 MA3X748 MA720 MA748

    MA3X720

    Abstract: MA3X748 MA720 MA748
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Low VF type of MA3X720 (MA720)


    Original     		PDF 2002/95/EC) MA3X748 MA748) MA3X720 MA720) MA3X720 MA3X748 MA720 MA748

    marking m2w

    Abstract: m2w marking MA3X720 MA720
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is


    Original     		PDF 2002/95/EC) MA3X720 MA720) SKH00079EED marking m2w m2w marking MA3X720 MA720

    MA3X720

    Abstract: MA720 m2w marking marking M2w
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 5˚ ue pl d in an c se ed lud pl vi an m m es


    Original     		PDF 2002/95/EC) MA3X720 MA720) MA3X720 MA720 m2w marking marking M2w

    Sine Wave Generator

    Abstract: t 06 marking 59 diodes ir MARKING 103 MA3X720 MA720
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) IF(AV) = 500 mA rectification is possible • Optimum for high frequency rectification because of its short


    Original     		PDF MA3X720 MA720) Sine Wave Generator t 06 marking 59 diodes ir MARKING 103 MA3X720 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Forward current (Average) I F(AV) = 500 mA rectification is


    Original     		PDF 2002/95/EC) MA3X720 MA720)

    MA3X720

    Abstract: MA720
    Text: Schottky Barrier Diodes SBD MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 10˚ Unit 40 V Repetitive peak reverse-voltage VRRM 40 V Average forward current


    Original     		PDF MA3X720 MA720) SC-59 MA3X720 MA720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X720 (MA720) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 5˚ 2 1 (0.95) (0.95) di p Pl


    Original     		PDF 2002/95/EC) MA3X720 MA720)

    MIP2F3

    Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
    Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety „ This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the


    Original     		PDF PAMP13-N1 MIP2F3 MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent

    ma3df25

    Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
    Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF respons39 O-220D-A1 MA26P02 MAZ3082J 2SC5779 MA26P07 MAZ3091 2SC5829 MA27E020G ma3df25 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    DIODE marking S4 59A

    Abstract: DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323
    Text: 2008.07 Renesas Diodes Status List Topic_Ultra-Small Zener Diodes " RKZ-KP Series " - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3


    Original     		PDF REJ16G0002-2200 DIODE marking S4 59A DIODE 1N4148 LL-34 Zener Diode SOD-323 marking code a2 marking v6 zener diode fairchild marking codes sot-23 RKZ18B2KG TWPEC 1w402 MTZJ SERIES ZENER DIODES 702 SOT-23 marking KJ marking 513 SOD-323

    MA7D52

    Abstract: No abstract text available
    Text: Part Number List • Part Number List M Part No. C Part No. Page M Part No. MA2C700 MA2C700A (MA700) 11 MA3D749A (MA700A) 11 MA3D750 MA2C719 (MA719) 13 MA3D750A MA2C723 (MA723) 15 MA3D752 (C Part No.) Page M Part No. (C Part No.) (MA7D49A) 93 MA3X717 (MA717)


    Original     		PDF MA2C700 MA2C700A MA2C719 MA2C723 MA2D749 MA2D749A MA2D750 MA2D755 MA2D760 MA2H735 MA7D52

    3dt1

    Abstract: No abstract text available
    Text: Voltage Regulators AN8018SA 1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC Unit: mm • Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components.


    Original     		PDF AN8018SA AN8018SA 16-pin 3dt1

    MA3X720

    Abstract: MA3X748 MA720 MA748
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X748 (MA748) Silicon epitaxial planar type Unit: mm For high frequency rectification 0.40+0.10 –0.05 M Di ain sc te on na tin nc ue e/ d 0.16+0.10 –0.06 5˚


    Original     		PDF 2002/95/EC) MA3X748 MA748) MA3X720 MA720) MA3X720 MA3X748 MA720 MA748

    AN8017SA

    Abstract: AN8018SA MA3X720
    Text: Voltage Regulators AN8018SA 1.8-volt 2-channel step-up, step-down, or inverting DC-DC converter control IC Unit: mm • Overview The AN8018SA is a two-channel PWM DC-DC converter control IC that features low-voltage operation. This IC can obtain the step-up, step-down and inverting voltages with a small number of external components.


    Original     		PDF AN8018SA AN8018SA 16-pin AN8017SA MA3X720

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type 1.25±0.1 For super high speed switching For small current rectification 0.7±0.1 Unit: mm 0.35±0.1 VR Repetitive peak reverse voltage


    Original     		PDF 2002/95/EC) MA2Z748 SC-76

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS