Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
SRAM127
P4C1026
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
SRAM127
P4C1026
Oct-05
Aug-06
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
SRAM127
SRAM127
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P4C1026
Abstract: P4C1258
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
toler150
SRAM127
SRAM127
P4C1258
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Untitled
Abstract: No abstract text available
Text: P4C1026 ULTRA HIGH SPEED 256K x 4 STATIC CMOS RAM FEATURES Full CMOS, 6T Cell TTL/CMOS Compatible Outputs High Speed Equal Access and Cycle Times – 15/20/25/35 ns (Commercial/Industrial) – 20/25/35 ns (Military) Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C1026
28-Pin
32-Pin
P4C1026
SRAM127
SRAM127
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Untitled
Abstract: No abstract text available
Text: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM
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P4C116/P4C116L
24-Pin
28-Pin
32-Pin
40-Pin
384-bit
P4C116/P4C116L
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Untitled
Abstract: No abstract text available
Text: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM
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P4C116/P4C116L
24-Pin
28-Pin
32-Pin
40-Pin
P4C116/P4C116L
384-bit
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Data Retention with 2.0V Supply, 10 µA Typical Current P4C164L Military Full CMOS, 6T Cell High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial)
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P4C164
P4C164L
28-Pin
100ns)
32-Pin
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25L40
Abstract: No abstract text available
Text: FT6116/FT6116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with CMOS Technology
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FT6116/FT6116L
24-Pin
28-Pin
32-Pin
40-Pin
FT6116/FT6116L
384-bit
25L40
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25L40
Abstract: P4C116 P4C116L
Text: P4C116/P4C116L ULTRA HIGH SPEED 2K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible Inputs and Outputs High Speed Equal Access and Cycle Times – 10/12/15/20/25/35 ns (Commercial) – 15/20/25/35 ns (Military) Produced with PACE II TechnologyTM
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P4C116/P4C116L
24-Pin
28-Pin
32-Pin
40-Pin
P4C116/P4C116L
384-bit
CMOS430
25L40
P4C116
P4C116L
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SMD code l32
Abstract: smd transistor l32 smd code WZ SMD L32 SMD l32 Transistor P4C1256
Text: P4C1256 P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Three-State Outputs Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP and SOJ —28-Pin 600 mil Ceramic DIP —28-Pin LCC 350 mil x 550 mil
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P4C1256
--28-Pin
--32-Pin
P4C1256
144-bit
32Kx8.
-70CMB
SMD code l32
smd transistor l32
smd code WZ
SMD L32
SMD l32 Transistor
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin LCC 350 mil x 550 mil
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P4C1256
--28-Pin
--32-Pin
144-bit
32Kx8.
P4C1256
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100DM
Abstract: 1519B P4C164 P4C164L
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
28-Pin
100ns)
32-Pin
100DM
1519B
P4C164
P4C164L
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Untitled
Abstract: No abstract text available
Text: P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed Equal Access and Cycle Times – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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P4C164
P4C164L
28-Pin
100ns)
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK —28-Pin SOP —28-Pin LCC 350 mil x 550 mil
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P4C1256
--28-Pin
--32-Pin
144-bit
32Kx8.
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
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P4C1256
--28-Pin
--32-Pin
144-bit
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
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P4C1256
--28-Pin
--32-Pin
144-bit
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Memory
Abstract: FT6264(L)
Text: FT6264 L ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Common Data I/O High Speed (Equal Access and Cycle Times) – 8/10/12/15/20/25/35/70/100 ns (Commercial) – 10/12/15/20/25/35/70/100 ns(Industrial) – 12/15/20/25/35/45/70/100 ns (Military)
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FT6264
28-Pin
100ns)
32-Pin
Memory
FT6264(L)
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2532 eprom
Abstract: 25l32 eprom 2532 MA 25L32 tms 2532 jl 2532 2532 eprom texas TMS2532 2532 rom TMS4732
Text: MOS LSI TMS 2532-30 JL, TMS 2532-35 JL, TMS 2532-45 JL. TMS 25L32-45 JL 32,768-BIT ERASABLE PROGRAMMABLE READ-ONLY MEMORIES • Organization . . . 4 0 9 6 X 8 • Single + 5 V Power Supply • Pin Compatible with Existing R O M s and E P R O M s 8K, 16K, 32K, and 64K
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768-BIT
25L32-45
1979-REVISED
25L32
2532 eprom
25l32
eprom 2532
MA 25L32
tms 2532 jl
2532
2532 eprom texas
TMS2532
2532 rom
TMS4732
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM A - FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial) — 20/25/35/45/55/70 ns (Military)
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P4C1256
28-Pin
-55L32M
-70L32M
-20CM
-25CM
-35CM
-45CM
-55CM
-70CM
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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OCR Scan
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM * FEATURES • ■ ■ ■ ■ ■ Three-State Outputs ■ Fully TTL Compatible Inputs and Outputs ■ Advanced CMOS Technology High Speed Equal Access and Cycle Times — 12/15/20/25/35 ns (Commercial) — 15/20/25/35/45 ns (Industrial)
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P4C1256
--28-Pin
144-bit
32Kx8.
requir-35C
-35L28M
-35L32M
-45PI
-425JI
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