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    intel organisational structure

    Abstract: intel 8274 PLC using ARM based PROJECTS 20-F ARM10 FRS11 ARM9 cash register mic epe plessey application note an 112 bipolar ROM
    Text: 55078COVER 9/3/99 3:56 pm Page 1 ARM Holdings plc ANNUAL REPORT AND ACCOUNTS 1998 ARM Holdings plc 90 Fulbourn Road, Cambridge CB1 4JN 55078PRE1 Design 11/3/99 11:02 pm Page iii ARM designs and licenses high performance, low cost, power efficient RISC microprocessors, related technology


    Original     		PDF 55078COVER 55078PRE1 intel organisational structure intel 8274 PLC using ARM based PROJECTS 20-F ARM10 FRS11 ARM9 cash register mic epe plessey application note an 112 bipolar ROM

    Untitled

    Abstract: No abstract text available
    Text: EDI8L3265C ZE D Ì, S4Kx32 SRAM EtECWONC DOWNS NC. 64Kx32CMOSHigh Speed StaticRAM Features 64Kx32 bit CMOS Static The EDI8L3265C is a high speed, high performance, four megabit density Static RAM organized as a 64Kx32 bit array. Four Byte Selects, two Chip Enables, Write Control, and


    OCR Scan     		PDF EDI8L3265C S4Kx32 64Kx32 JEDEC-M0-47AE) 64Kx32CMOSHigh EDI8L3265C MA01581USA* E08L3265C

    29f016

    Abstract: No abstract text available
    Text: o \ EDI7F332MC ELECTRONIC DESIGNS, INC. 2Megx32 W 2Megx32 Flash Module Block Diagrams The EDI7F332MC and EDI7F2332MC are orga­ nized as one and two banks of 2 meg x 32 respec­ EDI7F332MCSNC 2Megx3280pinSlMM tively. fine modules are based on A M D s AM 29F016


    OCR Scan     		PDF EDI7F332MC 2Megx32 2Megx32 EDI7F332MC EDI7F2332MC 29F016 EDI7F332MCSNC 2Megx3280pinSlMM DQ8-DQ15 DQ16-DQ23

    CC650

    Abstract: H1-200-5
    Text: EDI68512C ZEDi 4 Megabit 512Kx8 UV Erasable CMOS EPROM aECTOONC Dessus. NC. Advanced 4 Megabit(512Kx8) UVErasable CMOS EEPROM Features Fast Read Access Time - 70ns The EDI68512C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read


    OCR Scan     		PDF 200mA 100ns/byte EDI68512C 512Kx8) EDI68512C 304-bit 512Kx8 EDI68612rature EDI68512C70LI CC650 H1-200-5

    3DQ10

    Abstract: ICC1 EDI8L32512C20AI
    Text: m EDI8L32512C u 512KX32 SRAM Module aECTROMC DE9GN1 MC 512Kx32CMOSHigh Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a high speed, 5V, 16 megabit SRAM. • Motorola DSP96002 The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory


    OCR Scan     		PDF EDI8L32512C 512KX32 512Kx32CMOSHigh EDI8L32512C DSP96002 TMS320C3X, TMS320C4x MO-47AE 3DQ03 3DQ10 ICC1 EDI8L32512C20AI

    Untitled

    Abstract: No abstract text available
    Text: m o EDI8G322048C i 2043Kx32 SRAMModtÉe ElfC TB O N C D O C N SN C . 2048Kx32Static RAM CMOS> High SpeedModule Features The EDI8G322048C is a high speed 64 megabit Static 2048Kx32 bit CMOS Static RAM module organized as 2048K words by 32 bits. This Random Access Memory


    OCR Scan     		PDF EDI8G322048C 2043Kx32 2048Kx32Static EDI8G322048C 2048Kx32 2048K 1024Kx4 EDI8G322M8C EDI8G322048C20MMC EDI8G322048C25MMC

    a7w 3 PIN

    Abstract: a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34
    Text: EDI816256VA-RP m 256Kx16SRAM x ^ ELECTRONIC DESIGNS, INC. • RuggBdized Plastic ADVANCED 256Kx1B Static RAM CMOS, Monolithic Features The EDI816256VA is a 3.3 volt ruggedized plastic 256Kx16 bit CMOS Static 256Kx16 SRAM that allows the user to capitalize on the


    OCR Scan     		PDF EDI816256VA-RP 256Kx16SRAM 256Kx1B 256Kx16 EDI816256VA EDI816256VA17M44M EDI816256VA20M44M ECH816256VA-RP a7w 3 PIN a7w 16 A7W 98 A7W 14 A7W 29 A7W 85 A7W 42 a7w 37 A7W 36 A7W 34

    Untitled

    Abstract: No abstract text available
    Text: m EDI8F32259V a 256KX32 SRAM Module ELECTRONIC DESIGNS. INC. ADVANCED Features 256Kx32 Static RAM CMOS, High Speed Module 256Kx32 bit CMOS Static Random Access Memory • Access Times CMOS: 12,15 and 20ns • Individual Byte Selects • Fully Static, No Clocks


    OCR Scan     		PDF 256KX32 EDI8F32259V EDI8F32259V 256Kx4

    10592

    Abstract: No abstract text available
    Text: ^ E D I EDI8G321024V 1024KX32 SRAM Module ELECTRONIC DESIGNS, IN C 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12,15,17, and 20ns • Individual Byte Selects • Fully Static, No Clocks


    OCR Scan     		PDF 1024Kx32 EDI8G321024V EDI8G321024V 1024K 1024Kx4 EDI8F321024CXXMNC" EDI8G321024V15MZC EDI8G321024V17MZC 10592

    EC09

    Abstract: 663G
    Text: ^ E D EDI7F4334MC I 4x4Megx32 ELECTRONIC DESIGNS. IN C 4x4Megx32 Flash Module Block Diagrams The EDI7 F4334M C is organized a s a 4 x 4 M e g x 32 module which is based on A M D s A M 2 9F 0 1 6 - 2 M e g EDI7F4334MCSNC 4X4Megx3280pin SIMM x 8 Flash device in T S O P packages which are


    OCR Scan     		PDF EDI7F4334MC 4x4Megx32 4x4Megx32 F4334M EDI7F4334MCSNC 4X4Megx3280pin EDI7F4334MC EC09 663G

    Untitled

    Abstract: No abstract text available
    Text: EDÍ681MC m D t UV RECTROMC DESH5N& N C Features 8 Megabit 1UxS Erasable CMOS EPROM 8 Megabit (1Mx$ UV Erasable CMOS EEPROM Fast Read Access Time - 90ns The EDI681C chip is a low-power, high performance, 4,194,304-bit ultraviolet erasable programmable read


    OCR Scan     		PDF 681MC 200mA EDI681C 304-bit 512Kx8 EDK81MC EDI68512C70LI EDI68512C90LI EDI68512C120U