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    MA147 PACKAGE Search Results

    MA147 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    MA147 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking a7

    Abstract: A7 DIODE marking A7 diode DIODE A7 MA147 swithing
    Text: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current


    Original     		PDF MA147 OT-23 100mA 100uA MA147 marking a7 A7 DIODE marking A7 diode DIODE A7 swithing

    marking a7

    Abstract: MA147
    Text: MA147 SWITHING DIODE Package:SOT-23 High Switching Speed ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Reverse Voltage VR 80 Vdc Peak Repetitive Reverse Voltage VRM 80 V IF 100 Forward Current Single Series Forward Continuous Single Current


    Original     		PDF MA147 OT-23 100mA 100uA MA147 marking a7

    ma147 package

    Abstract: No abstract text available
    Text: MA142WK Switching Diodes MA147 Silicon epitaxial planer type Unit : mm For high-speed switching circuits 2.1±0.1 0.425 1.25±0.1 0.425 high-density mounting ● Series connection in package 0.3–0 Small S-Mini type package with two incorporated elements, enabling


    Original     		PDF MA142WK MA147 100mA ma147 package

    A35V

    Abstract: MA147 MA3J147
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J147 MA147) A35V MA147 MA3J147

    MA147

    Abstract: MA3J147
    Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For high-speed switching circuits 1.25 ± 0.1 0.425 2.0 ± 0.2 1.3 ± 0.1 0.65 0.65 • Features • Small S-mini type package contained two elements, allowing highdensity mounting


    Original     		PDF MA3J147 MA147) MA147 MA3J147

    MA147

    Abstract: MA3J147
    Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting • Two diodes are connected in series in the package


    Original     		PDF MA3J147 MA147) MA147 MA3J147

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Two isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J147 MA147)

    MA147

    Abstract: MA3J147
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting


    Original     		PDF 2002/95/EC) MA3J147 MA147) MA147 MA3J147

    sc-79

    Abstract: diodes ir Double high-speed switching diode MA147 MARKING 103 MA3J147
    Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 • Features 5˚ • Two isolated elements contained in one package, allowing highdensity mounting • Two diodes are connected in series in the package


    Original     		PDF MA3J147 MA147) sc-79 diodes ir Double high-speed switching diode MA147 MARKING 103 MA3J147

    MA147

    Abstract: MA3J147
    Text: Switching Diodes MA3J147 MA147 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit Reverse voltage (DC) VR 80 V Peak reverse voltage VRM 80 V IF 100 mA Single Peak forward


    Original     		PDF MA3J147 MA147) MA147 MA3J147

    MA3J147

    Abstract: MA147
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Switching Diodes MA3J147 (MA147) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For high-speed switching circuits 0.15+0.1 –0.05 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF 2002/95/EC) MA3J147 MA147) MA3J147 MA147

    2sc5929

    Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
    Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and


    Original     		PDF responsibiliXP08081 XP08546 XP0A554 XP0D873 XP0D874 XP0D875 XP0E554 2sc5929 MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


    Original     		PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    Untitled

    Abstract: No abstract text available
    Text: Diodes • Silicon Diodes Switching Vr Type No. (V ) If Ir * Ir (AV) max. (nA) (mA) CD max. *typ. (pF) trr max. (ns) Package Vr Type No. (V ) N o. If Ir * Ir (av) max. (nA) (mA) Co max. *typ. trr max. (ns) Package No. (P F ) MA111 « 80 100 100 1.2 3 S Mini (2 pins)


    OCR Scan     		PDF MA111 MA176WK AMA2S111 MA177/A MA112Ã MA180 MA113 pins0/178 DO-35/34 D31/27

    A4056

    Abstract: A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200
    Text: ) ì ) Switching Diodes Line-up S S Mini Type 3 Pin) S Mini Type (2 Pin) S Mini Type (3 Pin) S Mini Type (4 Pin) S Mini Type (6 Pin) Glass Hole-through type Surface Mount Type Mini Type (3 Pin) Mini Type (4 Pin) Mini Type (6 Pin) T Mini Type (3 Pin) M Type


    OCR Scan     		PDF DO-34 DO-35 MA199 MA158 MA174 MA188 MA115 MA114 MA193 MA132WA A4056 A4047 D83 ZENER MA2430 A4091 MA207 460 00 16 A4100 A4160 A3100W MA2Z200

    MA164

    Abstract: MA373 7400 fan-in MA154 T-42-11-05
    Text: RAYTHEON-. 7597360 SEMICONDUCTOR RAYTHEON/ bb Î Ë | ?ST?3t.O 0 D D S D S 7 SEMICONDUCTOR Preliminary Product Specifications Configurable G ate Arrays 66C T 05057 - 7-U - C G A 50L15/35L12 Raytheon CGA 50L15/35L12 Oxide Isolated ISL Bipolar Gate Arrays


    OCR Scan     		PDF 7----T-42-U-05 50L15/35L12 50L15/35L12 MA167 MA170 MA183 CA94039 MA164 MA373 7400 fan-in MA154 T-42-11-05

    AN3962FB

    Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
    Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030


    OCR Scan     		PDF MN101C01C MN101C01D MN101C025 MN1020003 MN1020004A MN1020004AFB MN1020012A MN1020 12AFA MN1020015 AN3962FB MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202