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    MA3S795 Price and Stock

    Panasonic Electronic Components MA3S79500L

    DIODE SCHOTT 30V 30MA SSMINI3-F2
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    DigiKey MA3S79500L Reel
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    Panasonic Electronic Components MA3S795E0L

    DIODE ARR SCHOT 30V 30MA SSMINI3
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    DigiKey MA3S795E0L Reel 3,000
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    Panduit Corp MA3S795E

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MA3S795E 57,000
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    Panasonic Electronic Components MA3S795E01ER

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MA3S795E01ER 18,000
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    MA3S795 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA3S795 Panasonic Diode Original PDF
    MA3S795 Panasonic Silicon epitaxial planar type Original PDF
    MA3S795 Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3S79500L Panasonic Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 0.03A SSMINI3 Original PDF
    MA3S795D Panasonic Schottky Barrier Diodes (SBD) Original PDF
    MA3S795D0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SSMINI3 Original PDF
    MA3S795E Panasonic Diode Original PDF
    MA3S795E Panasonic Silicon epitaxial planar type Original PDF
    MA3S795E Panasonic Silicon Epitaxial Planar Type Schottky Barrier Diode (SBD) Original PDF
    MA3S795E0L Panasonic Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SCHOTTKY 30V 30MA SSMINI3 Original PDF

    MA3S795 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA3S795E

    Abstract: MA795WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V


    Original     		2002/95/EC) MA3S795E MA795WK) MA3S795E MA795WK PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03 3° (0.15) 0 to 0.1


    Original     		MA3S795 MA795) MA3X704A MA704A) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 (0.80)


    Original     		2002/95/EC) MA3S795 MA795) MA3X704A MA704A) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features M Di ain sc te on na tin nc ue e/ d  Code SSMini3-F3  Pin Name


    Original     		2002/95/EC) MA3S795EG PDF

    MA3S795D

    Abstract: MA3S795E MA795WA MA795WK
    Text: Schottky Barrier Diodes SBD MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03


    Original     		MA3S795D MA795WA) MA3S795E MA795WK) MA3S795D MA3S795E MA795WA MA795WK PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching  Features • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V


    Original     		2002/95/EC) MA3S795E MA795WK) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name 1: Anode 2: N.C. 3: Cathode ■ Features


    Original     		2002/95/EC) MA3S7950G MA3X704A PDF

    104 M3D

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Series Double * Forward current (DC)


    Original     		MA3S795D, MA3S795E MA795WA, MA795WK) 104 M3D PDF

    MA3X704A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name


    Original     		2002/95/EC) MA3S7950G MA3X704A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode


    Original     		2002/95/EC) MA3S795EG PDF

    MA3X704A

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an


    Original     		2002/95/EC) MA3S7950G MA3X704A PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Cathode 1 2: Cathode 2 3: Anode


    Original     		2002/95/EC) MA3S795DG PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode


    Original     		2002/95/EC) MA3S795EG PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Cathode 1 2: Cathode 2 3: Anode


    Original     		2002/95/EC) MA3S795DG PDF

    MA3S795D

    Abstract: MA795WA
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795D (MA795WA) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V


    Original     		2002/95/EC) MA3S795D MA795WA) MA3S795D MA795WA PDF

    MA3S795

    Abstract: MA3X704A MA704A MA795 SC-89
    Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03 3° (0.15) 0 to 0.1


    Original     		MA3S795 MA795) MA3X704A MA704A) MA3S795 MA3X704A MA704A MA795 SC-89 PDF

    Untitled

    Abstract: No abstract text available
    Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 (0.80) 3 • High-density mounting is possible • Forward voltage VF , optimum for low voltage rectification


    Original     		MA3S795 MA795) MA3X704A MA704A) PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package  Features  Code SSMini3-F3  Pin Name 1: Anode 1 2: Anode 2 3: Cathode


    Original     		2002/95/EC) MA3S795EG PDF

    MA3S795E

    Abstract: MA795WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package  High-density mounting is possible  Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V


    Original     		2002/95/EC) MA3S795E MA795WK) MA3S795E MA795WK PDF

    MA3S795

    Abstract: MA3X704A
    Text: Schottky Barrier Diodes SBD MA3S795 0.28 ± 0.05 Silicon epitaxial planar type Unit : mm 1 + 0.05 • Features 1.60 ± 0.1 0.80 ± 0.05 0.28 ± 0.05 0.80 1.60 − 0.03 0.80 0.80 0.51 0.51 For switching circuits • Extra-small SS-mini type 3-pin package, allowing high-density


    Original     		MA3S795 MA3X704A) MA3S795 MA3X704A PDF

    MA3S795E

    Abstract: MA795WK
    Text: Schottky Barrier Diodes SBD MA3S795E (MA795WK) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 3 + 0.05 + 0.05 0.60 − 0.03 0.12 − 0.02 0.28 ± 0.05 2 • Absolute Maximum Ratings Ta = 25°C Symbol 1 + 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting


    Original     		MA3S795E MA795WK) MA3S795E MA795WK PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package  Features M Di ain sc te on na tin nc ue e/ d  Code SSMini3-F3  Pin Name


    Original     		2002/95/EC) MA3S795DG PDF

    104 M3D

    Abstract: MA3S795D MA3S795E MA795WA MA795WK SC-89 ARE M3D
    Text: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Double * Forward current (DC)


    Original     		MA3S795D, MA3S795E MA795WA, MA795WK) 104 M3D MA3S795D MA3S795E MA795WA MA795WK SC-89 ARE M3D PDF

    by 02 be

    Abstract: measure MA3S795D MA3S795E MA795WA MA795WK
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51)


    Original     		2002/95/EC) MA3S795D MA795WA) MA3S795E MA795WK) MA3S795D by 02 be measure MA3S795E MA795WA MA795WK PDF