MA3S795E
Abstract: MA795WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package High-density mounting is possible Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V
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2002/95/EC)
MA3S795E
MA795WK)
MA3S795E
MA795WK
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03 3° (0.15) 0 to 0.1
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MA3S795
MA795)
MA3X704A
MA704A)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 (0.80)
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Original
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2002/95/EC)
MA3S795
MA795)
MA3X704A
MA704A)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package Features M Di ain sc te on na tin nc ue e/ d Code SSMini3-F3 Pin Name
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2002/95/EC)
MA3S795EG
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MA3S795D
Abstract: MA3S795E MA795WA MA795WK
Text: Schottky Barrier Diodes SBD MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03
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MA3S795D
MA795WA)
MA3S795E
MA795WK)
MA3S795D
MA3S795E
MA795WA
MA795WK
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching Features • Package High-density mounting is possible Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V
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Original
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2002/95/EC)
MA3S795E
MA795WK)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name 1: Anode 2: N.C. 3: Cathode ■ Features
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Original
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2002/95/EC)
MA3S7950G
MA3X704A
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104 M3D
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Series Double * Forward current (DC)
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MA3S795D,
MA3S795E
MA795WA,
MA795WK)
104 M3D
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PDF
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MA3X704A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name
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Original
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2002/95/EC)
MA3S7950G
MA3X704A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Anode 1 2: Anode 2 3: Cathode
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Original
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2002/95/EC)
MA3S795EG
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PDF
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MA3X704A
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S7950G Silicon epitaxial planar type For high speed switching For wave detection • Package • Code SSMini3-F3 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an
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Original
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2002/95/EC)
MA3S7950G
MA3X704A
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Cathode 1 2: Cathode 2 3: Anode
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Original
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2002/95/EC)
MA3S795DG
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Anode 1 2: Anode 2 3: Cathode
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Original
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2002/95/EC)
MA3S795EG
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Cathode 1 2: Cathode 2 3: Anode
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2002/95/EC)
MA3S795DG
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MA3S795D
Abstract: MA795WA
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795D (MA795WA) Silicon epitaxial planar type For switching • Package High-density mounting is possible Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V
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Original
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2002/95/EC)
MA3S795D
MA795WA)
MA3S795D
MA795WA
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PDF
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MA3S795
Abstract: MA3X704A MA704A MA795 SC-89
Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3° 0.28±0.05 (0.51) (0.51) (0.80) (0.80) 0.60+0.05 –0.03 1.60+0.05 –0.03 3° (0.15) 0 to 0.1
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MA3S795
MA795)
MA3X704A
MA704A)
MA3S795
MA3X704A
MA704A
MA795
SC-89
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3S795 (MA795) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) • Features 0.12+0.05 –0.02 0.88+0.05 –0.03 3˚ (0.44) 1 2 1.60±0.05 (0.80) 3 • High-density mounting is possible • Forward voltage VF , optimum for low voltage rectification
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Original
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MA3S795
MA795)
MA3X704A
MA704A)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795EG Silicon epitaxial planar type For switching For wave detection • Package Features Code SSMini3-F3 Pin Name 1: Anode 1 2: Anode 2 3: Cathode
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Original
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2002/95/EC)
MA3S795EG
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PDF
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MA3S795E
Abstract: MA795WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795E (MA795WK) Silicon epitaxial planar type For switching • Package High-density mounting is possible Forward voltage VF , optimum for low voltage rectification:VF < 0.3 V
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Original
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2002/95/EC)
MA3S795E
MA795WK)
MA3S795E
MA795WK
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PDF
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MA3S795
Abstract: MA3X704A
Text: Schottky Barrier Diodes SBD MA3S795 0.28 ± 0.05 Silicon epitaxial planar type Unit : mm 1 + 0.05 • Features 1.60 ± 0.1 0.80 ± 0.05 0.28 ± 0.05 0.80 1.60 − 0.03 0.80 0.80 0.51 0.51 For switching circuits • Extra-small SS-mini type 3-pin package, allowing high-density
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Original
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MA3S795
MA3X704A)
MA3S795
MA3X704A
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PDF
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MA3S795E
Abstract: MA795WK
Text: Schottky Barrier Diodes SBD MA3S795E (MA795WK) Silicon epitaxial planar type Unit : mm 0.28 ± 0.05 For switching circuits 3 + 0.05 + 0.05 0.60 − 0.03 0.12 − 0.02 0.28 ± 0.05 2 • Absolute Maximum Ratings Ta = 25°C Symbol 1 + 0.05 • Extra-small (SS-mini type) package, allowing high-density mounting
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Original
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MA3S795E
MA795WK)
MA3S795E
MA795WK
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795DG Silicon epitaxial planar type For switching For wave detection • Package Features M Di ain sc te on na tin nc ue e/ d Code SSMini3-F3 Pin Name
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Original
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2002/95/EC)
MA3S795DG
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PDF
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104 M3D
Abstract: MA3S795D MA3S795E MA795WA MA795WK SC-89 ARE M3D
Text: Schottky Barrier Diodes SBD MA3S795D, MA3S795E (MA795WA, MA795WK) Silicon epitaxial planar type Unit: mm 0.28±0.05 0.80±0.05 (0.44) 0.12+0.05 –0.02 Rating Unit Reverse voltage (DC) VR 30 V Peak reverse voltage VRM 30 V IFM 150 mA Double * Forward current (DC)
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Original
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MA3S795D,
MA3S795E
MA795WA,
MA795WK)
104 M3D
MA3S795D
MA3S795E
MA795WA
MA795WK
SC-89
ARE M3D
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PDF
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by 02 be
Abstract: measure MA3S795D MA3S795E MA795WA MA795WK
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3S795D (MA795WA), MA3S795E (MA795WK) Silicon epitaxial planar type Unit: mm 0.80±0.05 0.28±0.05 (0.44) 0.12+0.05 –0.02 1 2 0.88+0.05 –0.03 3˚ 0.28±0.05 (0.51)
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Original
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2002/95/EC)
MA3S795D
MA795WA)
MA3S795E
MA795WK)
MA3S795D
by 02 be
measure
MA3S795E
MA795WA
MA795WK
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PDF
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