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    MA4E2502 Search Results

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    MA4E2502 Price and Stock

    MACOM MA4E2502H-1246

    RF DIODE SCHOTTKY 5V 50MW DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MA4E2502H-1246 Bulk 900 100
    • 1 -
    • 10 -
    • 100 $3.6257
    • 1000 $2.94734
    • 10000 $2.8125
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    Mouser Electronics MA4E2502H-1246
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.02
    • 10000 $2.93
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    Richardson RFPD MA4E2502H-1246 700
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.72
    • 10000 $2.72
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    MACOM MA4E2502L-1246

    RF DIODE SCHOTTKY 5V 50MW DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MA4E2502L-1246 Bulk 900 100
    • 1 -
    • 10 -
    • 100 $3.5981
    • 1000 $2.92362
    • 10000 $2.7875
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    Mouser Electronics MA4E2502L-1246 4,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.78
    • 10000 $2.78
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    Verical MA4E2502L-1246 200 16
    • 1 -
    • 10 -
    • 100 $3.4
    • 1000 $3.4
    • 10000 $3.4
    Buy Now
    Richardson RFPD MA4E2502L-1246 200 700
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.71
    • 10000 $2.71
    Buy Now
    MA4E2502L-1246 700
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.71
    • 10000 $2.71
    Buy Now

    MACOM MA4E2502M-1246

    RF SCHOTTKY DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD MA4E2502M-1246 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.3
    • 10000 $2.3
    Buy Now

    MACOM MA4E2502L-1246W

    RF SCHOTTKY DIODE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Richardson RFPD MA4E2502L-1246W 1
    • 1 -
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    MA4E2502 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA4E2502 Tyco Electronics SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Original PDF
    MA4E2502H Tyco Electronics SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Original PDF
    MA4E2502H-1246 Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A G4 Original PDF
    MA4E2502H-1246T Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A DO-201AD T/R Original PDF
    MA4E2502H-1246W Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A TO Original PDF
    MA4E2502L Tyco Electronics DIODE SCHOTTKY DIODE 3V 2DO-41 Original PDF
    MA4E2502L-1246 M/A-COM RF Diodes, Discrete Semiconductor Products, DIODE,SCHOTTKY,SGL_JCT, Original PDF
    MA4E2502L-1246 Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A TO Original PDF
    MA4E2502L-1246T Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A TO T/R Original PDF
    MA4E2502L-1246W Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A DO-41 Original PDF
    MA4E2502M Tyco Electronics SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes Original PDF
    MA4E2502M-1246 Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A P600 Original PDF
    MA4E2502M-1246T Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A TO T/R Original PDF
    MA4E2502M-1246W Tyco Electronics DIODE SCHOTTKY DIODE 5V 0.02A A-405 Original PDF

    MA4E2502 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    schottky diode MACOM SPICE model

    Abstract: schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    PDF MA4E2502 schottky diode MACOM SPICE model schottky diode MACOM SPICE model Cjpar MA4E2502L-1246 Advanced Schottky Family

    MA4E2502L-1246

    Abstract: MA4E2502 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    PDF MA4E2502 MA4E2502L-1246 ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W MADS-002502

    65rj

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    PDF MA4E2502 65rj

    Untitled

    Abstract: No abstract text available
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    PDF MA4E2502

    MA4E2502L

    Abstract: 50E-01
    Text: MA4E2502L SurMount Surface Mount Chip Monolithic Low Barrier Schottky Diodes Preliminary Features n n n n n n n n Case Style1, 2 Reliable, Multi-layer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours Lower Susceptibility to ESD Damage


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    PDF MA4E2502L 56E-08 95E-15 37E-02 76E-14 0E-01 00E-05 50E-01

    MA4E2502L-1246T

    Abstract: ma*2502 MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W
    Text: SURMOUNTTM Low, Medium and High Barrier Silicon Schottky Diodes MA4E2502 Series V 4.00 Features Case Style 1246 Extremely Low Parasitic Capitance and Inductance Suface Mountable in Microwave Circuits , No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch


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    PDF MA4E2502 MA4E2502L-1246W MA4E2502L-1246 MA4E2502L-1246T MA4E2502M-1246W MA4E2502M-1246 MA4E2502M-1246T MA4E2502H-1246W MA4E2502H-1246 MA4E2502L-1246T ma*2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246 MA4E2502M-1246W

    MA4E2502_Series

    Abstract: MA4E2502 Series mads-002502-1246hp MA4E2502 MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246
    Text: MA4E2502 Series SURMOUNTTM Low, Medium, and High Barrier Silicon Schottky Diodes Features • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwavable Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


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    PDF MA4E2502 MA4E2502_Series MA4E2502 Series mads-002502-1246hp MA4E2502H MA4E2502L MA4E2502L-1246 MA4E2502L-1246W MA4E2502M MA4E2502M-1246

    Untitled

    Abstract: No abstract text available
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original
    PDF MA4E2508

    low barrier schottky

    Abstract: MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom
    Text: MA4E2532L-1113, MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features M/A-COM Products Rev. V3 Case Style 1113 • Extremely Low Parasitic Capacitance and Inductance • Surface Mountable in Microwave Circuits, No


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    PDF MA4E2532L-1113, MA4E2532M-1113 MA4E2532-1113 low barrier schottky MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 macom

    MA4E2508L-1112

    Abstract: MA4E2502 MA4E2508 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112
    Text: SURMOUNTTM Low and Medium & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required • Rugged HMIC Construction with Polyimide


    Original
    PDF MA4E2508 MA4E2508M MA4E2508H MA4E2508L-1112 MA4E2502 MA4E2508H MA4E2508L MA4E2508L-1112T MA4E2508L-1112W MA4E2508M MA4E2508H-1112

    MA4E2502

    Abstract: MA4E2514 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W
    Text: MA4E2514 Series SURMOUNTTM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair V 2.00 Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch


    Original
    PDF MA4E2514 MA4E2514L MA4E2514M MA4E2514L-1116W MA4E2514L-1116 MA4E2514L-1116T MA4E2514M-1116W MA4E2514M-1116 MA4E2502 MA4E2514L MA4E2514L-1116 MA4E2514L-1116W MA4E2514M MA4E2514M-1116 MA4E2514M-1116W

    Untitled

    Abstract: No abstract text available
    Text: SURMOUNT TM Low and Medium Barrier Silicon Schottky Diodes: Tee Pair MA4E2514 SERIES Version 3.00 Features • Extremely Low Parasitic Capitance and Inductance • Surface Mountable in Microwave Circuits , No Wirebonds Required • Rugged HMIC Construction with Polyimide Scratch Protection


    Original
    PDF MA4E2514 MA4E2514L MA4E2514M

    schottky diode MACOM SPICE model Cjpar

    Abstract: MACOM Schottky Diode
    Text: MA4E2508 Series SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair Features M/A-COM Products Rev. V3 Case Style 1112 • Extremely Low Parasitic Capitance & Inductance • Surface Mountable in Microwave Circuits, No Wirebonds Required


    Original
    PDF MA4E2508 schottky diode MACOM SPICE model Cjpar MACOM Schottky Diode

    smr-3822

    Abstract: x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter
    Text: final covers_2008.qxd 5/8/08 3:20 PM Page 1 We work with you The M/A-COM brand of radio frequency RF and microwave components is one of the broadest lines of reliable components for the wireless telecom, automotive, aerospace and military industries. From semiconductors to components, to subsystems and small systems, there are many new M/A-COM


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    PDF Jun08 smr-3822 x-band power transistor 50W SMR-5550 x-band mmic lna HF multicoupler GAAS FET AMPLIFIER x-band 10w x-band microwave fet SM4T mixer PALLET FM AMPLIFIER 300 WATTS x-band limiter

    XM0830SJ

    Abstract: smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563
    Text: Selection Guide RF & Protection Devices [ www.infineon.com/rfandprotectiondevices ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


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    PDF 24GHz BF517 BF770A BF771 BF775 BF799 BF799W BFP181 BFP181R BFP182 XM0830SJ smd code marking 162 sot23-5 MARKING V14 SOT23-5 RF Transistor Selection smd code marking rf ft sot23 smd code marking NEC rf transistor sot-363 inf smd marking D3 SOT363 XM0860SH MGA51563

    MA4E2502

    Abstract: MA4E2514M-1116 MA4E2514M-1116T MA4E2514M-1116W
    Text: MA4E2514M-1116 SURMOUNTTM Medium Barrier Silicon Schottky Diodes: Tee Pair V 1.00 Case Style 1116 Features A Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch


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    PDF MA4E2514M-1116 MA4E2514M-1116 dielectri-8296, MA4E2502 MA4E2514M-1116T MA4E2514M-1116W

    BGT24MTR11

    Abstract: AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586
    Text: Selection Guide RF & Protection Devices www.infineon.com/rfandprotectiondevices 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 9 RF MOSFET 16 RF Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original
    PDF 24GHz BF517 BF770A BF771 BF799 BF799W BFP181 BFP182 BFP182R BFP182W BGT24MTR11 AZ1045-04F BAR86-02LRH 24GHz Radar BGA628L7 SMV1705 BFR181W ALPHA&OMEGA DATE CODE marking code onsemi Diode 2SC4586

    PH1819-60

    Abstract: SMR-5550 SMR-5550i smr-3822 HF multicoupler transistor MY51 GPS Antenna AT65 TU-3840 Wideband ELINT Tuner agastat 2400 x-band power transistor 50W
    Text: We work with you RF & Microwave Product Solutions June 2006 M/A-COM, Inc., a business unit of Tyco Electronics, is an established industry leader in the design, development, and manufacture of radio frequency RF , microwave and millimeter wave semiconductors, components and technologies


    Original
    PDF

    1113T

    Abstract: MA4E2502 MA4E2532 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 ESD Diodes Semiconductor ring structure
    Text: MA4E2532L-1113 MA4E2532M-1113 SURMOUNTTM Low & Medium Barrier Silicon Schottky Diodes: Ring Quad Series Features V 2.00 Case Style 1113 Extremely Low Parasitic Capitance and Inductance Surface Mountable in Microwave Circuits, No Wirebonds Required n Rugged HMIC Construction with Polyimide Scratch


    Original
    PDF MA4E2532L-1113 MA4E2532M-1113 MA4E2532-1113 MA4E2532 1113T MA4E2502 MA4E2532L-1113 MA4E2532L-1113T MA4E2532L-1113W MA4E2532M-1113 ESD Diodes Semiconductor ring structure

    cdma Booster schematic

    Abstract: uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz
    Text: May 2007 Product & Application Guide 2007 Small Signal Discretes www.infineon.com/smallsignaldiscretes Table of Contents Applications Mobile Communication ……………. Consumer …………………………………. Automotive & Industrial.………….


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    PDF B132-H9014-X-X-7600 NB07-1094 cdma Booster schematic uwb transceiver BGH182M ESDOP8RFL bridge 45 b 50 20 c1v TRANSISTOR SMD CODE PACKAGE SOT89 52 10A DVB-T Schematic set top box BF776 DVB-t receiver schematic diagram microstrip Antenna 5.8ghz

    MAAM-008863

    Abstract: MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer
    Text: Corporate Headquarters Richardson Electronics 40W267 Keslinger Road P.O. Box 393 LaFox, IL USA 60147-0393 Phone: 1 800 737-6937 630-208-3637 Fax: (630) 208-2550 Internet: www.rell.com Email: Canada Brampton, Ontario Torod, Norway 1 (800) 737-6937 Latin America


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    PDF 40W267 MAAM-008863 MAMU-009156 transistor MY52 200W MOSFET POWER AMP transistor MY51 GPS Antenna AT65 MA4ST350 MADR-007690-DR0002 a74 sot-89 SM4T mixer

    Untitled

    Abstract: No abstract text available
    Text: > « fc ç ô M Preliminary Specification m a n A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V 2.00 Features • Singles, Pairs, Tees, Ring and Cross-over Q uads • Reliable, M ultilayer Metalization with a Diffusion


    OCR Scan
    PDF MIL-S-883 MA4E2500 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L

    MA4E2502L

    Abstract: No abstract text available
    Text: V f lf c w H SurMount Chip Schottky Diodes SurMount Chip Surface Mount Monolithic Low Barrier Schottky Diodes M A 4 E 2 5 0 0 Series Features • Singles, Pairs, Ring and Crossover Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization


    OCR Scan
    PDF MIL-S-883 MA4E2500L MA4E2502L

    Untitled

    Abstract: No abstract text available
    Text: an A M P com pany Surface Mount Chip Monolithic Low Barrier Schottky Diodes MA4E2500 Surmount Series V3.00 Features • Singles, Pairs, Tees, Ring and Cross-over Quads • Reliable, Multilayer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours


    OCR Scan
    PDF MIL-S-883 MA4E2500 MA4E2500L MA4E2544L MA4E2545L MA4E2514L MA4E2515L