Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V 2.00 Case Style Features • Superior High Spued M icrow ave Switching Diode • 2-3 Nanosecond Sw itching W h e n D riven From T i l Logic • Capacitance as Low as 0.025 pF Specified at 10 G H z

schematic WELDER

Abstract: als38a PIN Diode Driver Circuit PIN DIODE SPDT DRIVER CIRCUITS
Contextual Info: MA4GP900 Series & GaAs Beam Lead PIN Diodes Features • SUPERIOR HIGH SPEED MICROWAVE SWITCHING DIODE ■ 2-3 NANOSECOND SWITCHING WHEN DRIVEN FROM TTL LOGIC ■ CAPACITANCE AS LOW AS 0.025 pF SPECIFIED AT 10 GHz ■ SERIES RESISTANCE AS LOW AS 2 OHMS SPECIFIED AT 10 GHz

Contextual Info: Ajál, M ah A M P tcompany GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Case Style Features • Superior High Speed Microwave Switching Diode • 2-3 N anosecond Switching When Driven From TTL Logic • Capacitance as Low as 0.025 pF Specified at 10 GHz

schematic WELDER

Abstract: capacitor welder schematic
Contextual Info: GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Case Style Features ● ● ● ● ● Superior High Speed Microwave Switching Diode 2-3 Nanosecond Switching When Driven From TTL Logic Capacitance as Low as 0.025 pF Specified at 10 GHz Series Resistance as Low as 2 Ohms Specified at

Contextual Info: an A M P com pany GaAs Beam-Lead PIN Diodes MA4GP900 Series V3.00 Features Case Style • Superior High Speed Microwave Switching Diode • 2-3 Nanosecond Switching When Driven From TTL Logic • Capacitance as Low as 0.025 pF Specified at 10 GHz • Series Resistance as Low as 2 Ohms Specified at