MA9264
Abstract: No abstract text available
Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with
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MA9264
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MA9264
Abstract: No abstract text available
Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with
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MA9264
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MA9264
Abstract: MA92 CS209
Text: MARCH 1995 MA9264 ADVANCE DATA DS3692-5.1 MA9264 RADIATION HARD 8192 x 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with
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MA9264
DS3692-5
MA9264
8192x8
MA92
CS209
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MA9264
Abstract: MAX9264 XG404
Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with
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MA9264
8192x8
DS3692-7
MA9264
MAX9264
XG404
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atmel 424
Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791C
atmel 424
AT65609EHW-CI40SV
AT65609E
ATMel 046
MIL-PRF38535
AT65609EHW-CI40MQ
AT65609EHW-CI40SR
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Untitled
Abstract: No abstract text available
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791Câ
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Untitled
Abstract: No abstract text available
Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous
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440mW
MIL-PRF38535
AT65609EHW
MA9264
7791Dâ
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Untitled
Abstract: No abstract text available
Text: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with
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DS3692-5
MA9264
MA9264
8192x8
37bfl522
0D23flfl7
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Untitled
Abstract: No abstract text available
Text: Si GEC PLESSEY ADVANCE DATA S E M I C O N D U C T O R S DS3692-4.3 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5|±m technology. The design uses a 6 transistor cell and has full static operation with
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DS3692-4
MA9264
MA9264
8192x8
110lOO
37tjflS22
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Untitled
Abstract: No abstract text available
Text: G E C P L E S S E Y ma9264 S I M 1 C N 1) I) ( I () K Radiation Hard 8192x8 Bit Static R A M S (Advance Data) S10301 A D S Issue 2.1 October 1990 Features Block Diagram • 1.5(im CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 106 rad (Si)
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ma9264
8192x8
S10301
MA9264
alt-60
1x10fi
1x10ls
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