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    MA9264 Search Results

    MA9264 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MA9264 Dynex Radiation Hard 8192x8 Bit Static RAM Original PDF

    MA9264 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA9264

    Abstract: No abstract text available
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original
    PDF MA9264 8192x8 DS3692-7 MA9264

    MA9264

    Abstract: No abstract text available
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces June 1999 version, DS3692-6.0 DS3692-7.0 January 2000 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original
    PDF MA9264 8192x8 DS3692-6 DS3692-7 MA9264

    MA9264

    Abstract: MA92 CS209
    Text: MARCH 1995 MA9264 ADVANCE DATA DS3692-5.1 MA9264 RADIATION HARD 8192 x 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original
    PDF MA9264 DS3692-5 MA9264 8192x8 MA92 CS209

    MA9264

    Abstract: MAX9264 XG404
    Text: MA9264 MA9264 Radiation Hard 8192x8 Bit Static RAM Replaces January 2000 version, DS3692-7.0 DS3692-7.1 July 2002 The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5µm technology. The design uses a 6 transistor cell and has full static operation with


    Original
    PDF MA9264 8192x8 DS3692-7 MA9264 MAX9264 XG404

    atmel 424

    Abstract: AT65609EHW AT65609EHW-CI40SV AT65609E MA9264 ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs


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    PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791C atmel 424 AT65609EHW-CI40SV AT65609E ATMel 046 MIL-PRF38535 AT65609EHW-CI40MQ AT65609EHW-CI40SR

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption • • • • • • • • • – Active: 440mW Max – Standby: 10mW (Typ) Wide Temperature Range: -55°C to +125°C 600 Mils Width Package: SB28 TTL Compatible Inputs and Outputs


    Original
    PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791Câ

    Untitled

    Abstract: No abstract text available
    Text: Features • Operating Voltage: 5V • Access Time: 40ns • Very Low Power Consumption – Active: 440mW Max – Standby: 10mW (Typ) • Wide Temperature Range: -55°C to +125°C • 600 Mils Width Package: SB28 • TTL Compatible Inputs and Outputs • Asynchronous


    Original
    PDF 440mW MIL-PRF38535 AT65609EHW MA9264 7791Dâ

    Untitled

    Abstract: No abstract text available
    Text: S i GEC PLESSEY S F M ADVANCE DATA ¡ C O N D U C T O R S DS3692-5.1 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5nm technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan
    PDF DS3692-5 MA9264 MA9264 8192x8 37bfl522 0D23flfl7

    Untitled

    Abstract: No abstract text available
    Text: Si GEC PLESSEY ADVANCE DATA S E M I C O N D U C T O R S DS3692-4.3 MA9264 RADIATION HARD 8192 X 8 BIT STATIC RAM The MA9264 64k Static RAM is configured as 8192x8 bits and manufactured using CMOS-SOS high performance, radiation hard, 1.5|±m technology. The design uses a 6 transistor cell and has full static operation with


    OCR Scan
    PDF DS3692-4 MA9264 MA9264 8192x8 110lOO 37tjflS22

    Untitled

    Abstract: No abstract text available
    Text: G E C P L E S S E Y ma9264 S I M 1 C N 1) I) ( I () K Radiation Hard 8192x8 Bit Static R A M S (Advance Data) S10301 A D S Issue 2.1 October 1990 Features Block Diagram • 1.5(im CMOS-SOS technology • Latch up free • Fast access time 45ns • Total dose 106 rad (Si)


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    PDF ma9264 8192x8 S10301 MA9264 alt-60 1x10fi 1x10ls