2SC2735
Abstract: 2SC4265 DSA003637
Text: 2SC4265 Silicon NPN Epitaxial ADE-208-1102A Z 2nd. Edition Mar. 2001 Application VHF RF amplifier, Local oscillator, Mixer Outline CMPAK 3 1 2 Note: Marking is “JC”. 1. Emitter 2. Base 3. Collector 2SC4265 Absolute Maximum Ratings (Ta = 25°C) Item Symbol
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2SC4265
ADE-208-1102A
2SC2735
2SC4265
DSA003637
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3SK296
Abstract: DSA003641
Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1
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3SK296
ADE-208-388A
3SK296
DSA003641
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3SK295
Abstract: DSA003641
Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1
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3SK295
ADE-208-387A
3SK295
DSA003641
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3SK297
Abstract: DSA003642
Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source
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3SK297
ADE-208-389A
3SK297
DSA003642
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Hitachi DSA0076
Abstract: 1SV70 BB303C SOT343 C5 K-806
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303C
ADE-208-698B
200pF,
OT-343
BB303C
Hitachi DSA0076
1SV70
SOT343 C5
K-806
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Hitachi DSA0076
Abstract: 1SV70 BB403M
Text: BB403M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-699B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB403M
ADE-208-699B
200pF,
OT-143
BB403M
Hitachi DSA0076
1SV70
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PDF
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Hitachi DSA0076
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697B Z 3rd. Edition Mar. 2001 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697B
200pF,
OT-143R
BB303M
Hitachi DSA0076
1SV70
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Untitled
Abstract: No abstract text available
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
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P1025-BD
Abstract: 30MPA0562 DM6030HK TS3332LD XP1025-BD XP1025-BD-000V ka-band bare
Text: 28.0-31.0 GHz GaAs MMIC Power Amplifier P1025-BD March 2007 - Rev 05-Mar-07 Features Ka-Band 1 W Power Amplifier 27.0 dB Small Signal Gain +30.0 dBm Saturated Output Power 100% On-Wafer RF, DC and Output Power Testing 100% Visual Inspection to MIL-STD-883
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P1025-BD
05-Mar-07
MIL-STD-883
XP1025-BD
XP1025-BD-000V
XP1025-BD-EV1
XP1025-BD
P1025-BD
30MPA0562
DM6030HK
TS3332LD
XP1025-BD-000V
ka-band bare
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3sk300
Abstract: DB64 DSA003642
Text: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449A Z 2nd. Edition Mar. 2001 Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline MPAK-4 2 3 1 4 Note: Marking is “ZR–”
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3SK300
ADE-208-449A
3sk300
DB64
DSA003642
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VD F1 SMD
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0921A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0921A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=33dBm TYP. @f=1.9GHz,Pin=17dBm
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MGF0921A
MGF0921A
33dBm
17dBm
500mA
50pcs)
VD F1 SMD
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60Ghz
Abstract: MGF0952P 211G idq042a
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0952P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0952P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=36.5dBm TYP. @f=2.15GHz,Pin=25Bm
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MGF0952P
MGF0952P
15GHz
15GHz
25dBm
700mA
60Ghz
211G
idq042a
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Untitled
Abstract: No abstract text available
Text: TGC4403-SM 8 - 15 GHz Packaged Doubler with Amplifier Key Features • • • • • • • Measured Performance Bias conditions: Vd = 5 V, Id = 150 mA, Vdbl = -0.8 V, Vg = -0.5 V Typical RF Output Frequency Range: 16-30 GHz Input Frequency Range: 8 - 15 GHz
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TGC4403-SM
TGC4403-SM
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0951P
Abstract: MGF0951P 60Ghz mitsubishi mgf
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0951P L & S BAND GaAs FET [ Plastic Mold Lead-less PKG ] DESCRIPTION The MGF0951P GaAs FET with an N-channel schottky Gate, is designed for use L/S band amplifiers. FEATURES • High output power Po=31dBm TYP. @f=2.15GHz,Pin=20dBm
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MGF0951P
MGF0951P
31dBm
15GHz
20dBm
15GHz
200mA
0951P
60Ghz
mitsubishi mgf
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Untitled
Abstract: No abstract text available
Text: TGA2525 2-18 GHz Low Noise Amplifier with AGC Key Features • • • • • • • • • • Measured Performance Primary Applications • • • 10 20 9 18 8 16 7 NF 14 6 Gain 12 5 10 4 8 3 6 2 4 1 2 4 6 8 10 12 14 16 18 Gain, IRL, ORL dB Frequency (GHz)
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TGA2525
0007-inch
TGA2525
EAR99
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RA60H1317M1A
Abstract: RA60H1317M1 RF MOSFET MODULE RF MODULE RA60H1317M1A rf transistor mar 8 MITSUBISHI marking example 174MHZ marking code transistor ND F1361 MAR 601 transistor
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H1317M1A RoHS Compliance ,136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H1317M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 136- to
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RA60H1317M1A
136-174MHz
RA60H1317M1A
60-watt
174-MHz
RA60H1317M1
RF MOSFET MODULE
RF MODULE RA60H1317M1A
rf transistor mar 8
MITSUBISHI marking example
174MHZ
marking code transistor ND
F1361
MAR 601 transistor
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RD16HHF1
Abstract: RD16HHF1-101 RD 15 hf mitsubishi transistor d 1564 MITSUBISHI RF POWER MOS FET MITSUBISHI RF POWER MOS FET rd 100 RD16HHF Transistor D 1747 MAR 637 rf transistor mar 8
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.
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RD16HHF1
30MHz
RD16HHF1
30MHz
RD16HHF1-1th
RD16HHF1-101
RD 15 hf mitsubishi
transistor d 1564
MITSUBISHI RF POWER MOS FET
MITSUBISHI RF POWER MOS FET rd 100
RD16HHF
Transistor D 1747
MAR 637
rf transistor mar 8
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c814C
Abstract: DS4990
Text: EUA4990 1.36 Watt Audio Power Amplifier DESCRIPTION FEATURES The EUA4990 is an audio power amplifier designed for portable communication device applications such as mobile phone applications. The EUA4990 is capable of delivering 1.36W of continuous average power to an 8Ω
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EUA4990
EUA4990
460mW
DS4990
c814C
DS4990
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CHA8100
Abstract: x-Band High Power Amplifier AN0020 CHA8100-99F 41dBm vcx8 mar105
Text: CHA8100 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC TI Description Vc TO9 Vc Vctrl Vc TO8 The CHA8100 chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power
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CHA8100
CHA8100
DSCHA81000069
x-Band High Power Amplifier
AN0020
CHA8100-99F
41dBm
vcx8
mar105
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400M
Abstract: 430M 470M RA30H4047M1
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4047M1 RoHS Compliance, 400-470MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to
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RA30H4047M1
400-470MHz
RA30H4047M1
30-watt
470-MHz
400M
430M
470M
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lt 7210
Abstract: 470M RA30H4552M1 RA30H4552M1-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H4552M1 RoHS Compliance, 450-520MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to
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RA30H4552M1
450-520MHz
RA30H4552M1
30-watt
520-MHz
lt 7210
470M
RA30H4552M1-101
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MGH80
Abstract: TRANSISTOR SMD catalog AN98017 AN98020 AN98026 BLV909 SMD TRANSISTOR
Text: APPLICATION NOTE 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz AN98020 Philips Semiconductors 9 W Linear Class-AB Amplifier with the BLV909 for 935 − 960 MHz CONTENTS 1 INTRODUCTION 2 TRANSISTOR BACKGROUND 3 AMPLIFIER BACKGROUND 4 AMPLIFIER PERFORMANCE
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BLV909
AN98020
BLV909.
SCA57
MGH80
TRANSISTOR SMD catalog
AN98017
AN98020
AN98026
SMD TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: SMC2933L6012R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 700W typ. @ Pin=31.6W (45dBm) High Efficiency: 50%(typ.) @ Pin=31.6W (45dBm) Power Gain : 13.5dB(typ.) Impedance Matched Zin/Zout = 50 ohm
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SMC2933L6012R
45dBm)
SMC2933L6012R
300usec
25deg
200msec,
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mar 536
Abstract: No abstract text available
Text: SMC2933L1512R High Voltage - High Power GaN-HEMT Pallet Amplifier FEATURES • • • • • High Voltage Operation : VDS=50V High Power : 180W typ. @ Pin=6.3W (38dBm) High Efficiency: 50%(typ.) @ Pin=6.3W (38dBm) Power Gain : 14.5dB(typ.) Impedance Matched Zin/Zout = 50 ohm
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SMC2933L1512R
38dBm)
SMC2933L1512R
300usec
25deg
200msec,
mar 536
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