MARK E1 Search Results

JRC 14

Abstract: jrc 8 pin MARK H1 SOT-89 MARK MARK D2 SOT23 jrc 14 pin MARK C3 SOT23 56A1 SDMP30 144L1
Contextual Info: STANDARD MARK LAYOUT 7. STANDARD MARK LAYOUT The standard mark layout of our packages are as follows. For further information, please contact to our sales offices. <Lead Insertion Type> Name Number of pins TO-220 3, 4 ,5 Mark Layout Device name JRC Logo Device name

Contextual Info: BC857S PNP, Multi-Chip, General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector currents to 200 mA. Sourced from Process 68. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .3C Mark: .2A

Contextual Info: NIPCDOOOl O •OS-CON’ is SANYO ELECTRIC CO.,LTD. Trade Mark. CAT. No. E1002B

SOD123 footprint

Abstract: MINI-MELF schottky BLUE CATHODE MARKING CODE diode sod123 W1 MINI-MELF schottky BLUE CBVK741B019 F63TNR MBR0520L MMSZ5221B MBR0520L SOD123
Contextual Info: MBR0520L MBR0520L Features • 0.5 Ampere, low forward voltage, less then 385mV • 400 milliwatt Power Dissipation package • Compact surface mount package with the same footprint as mini-melf SOD123 SOD123 Mark:B2 Mark: B4 CATHODE COLOR BAND DENOTES Mark:

84-BALL

Abstract: EDE2508AEBG
Contextual Info: EDE2508AEBG, EDE2516AEBG 84-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 12.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.1 S 0.35 ± 0.05 B φ0.15 M S A B 0.8 84-φ0.45 ± 0.05 11.2 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0224-01 Data Sheet E1175E20 Ver. 2.0 74

mark Bb

Abstract: e5 marking
Contextual Info: SEMICONDUCTOR USFB13L MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 BB JA 1 CATHODE MARK No. Item Marking Description Device Mark BB USFB13L * Lot No. JA Manufacturing date Year/Week Note) * Lot No. marking method Year Periode (Year)

1P NPN

Abstract: FFB2222A FMB2222A MMPQ2222A SC70-6 SOIC-16
Contextual Info: Is S'-^iC T Z3 NSCJLJC: * "T»»? FMB2222A MMPQ2222A C2 E1 C1 E1 pin#1 p-E2 B1 B2 % SC70-6 SuperSOT -6 Mark: .1P Mark: .1P / MMPQ2222A pin#1 • C1 SOIC-16 C1 NPN Multi-Chip General Purpose Amplifier This device is for use as a medium power am plifier and switch requiring collector

Contextual Info: ^ F M ic n ^ r a jr : T n p FM B2907A FFB2907A M M PQ2907A E2 pin #1 E1 S C 7 0 -6 Mark: ,2F Mark: ,2F PNP Multi-Chip General Purpose Amplifier This device is designed for use as a general purpose amplifier and switch requiring collector currents to 500 mA. Sourced from Process 63.

2G MARKING

Abstract: PG12GSUSC
Contextual Info: SEMICONDUCTOR PG12GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 2G 0 1 2 1 No. Item Marking Description Device Mark 2G PG12GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

PG15FBUSC

Contextual Info: SEMICONDUCTOR PG15FBUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 BD 1 0 1 2 1 No. Item Marking Description Device Mark BD PG15FBUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

3J10

Abstract: PG03JSUSC
Contextual Info: SEMICONDUCTOR PG03JSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 3J 1 0 1 2 1 No. Item Marking Description Device Mark 3J PG03JSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

sd marking

Abstract: PG15GSUSC
Contextual Info: SEMICONDUCTOR PG15GSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 SD 1 0 1 2 1 No. Item Marking Description Device Mark SD PG15GSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

marking 4f

Contextual Info: SEMICONDUCTOR PG24FSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 4F 1 0 1 2 1 No. Item Marking Description Device Mark 4F PG24FSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

USFB13

Abstract: Device Marking A3 A301
Contextual Info: SEMICONDUCTOR USFB13 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 A3 0 1 1 CATHODE MARK No. Item Marking Description Device Mark A3 USFB13 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

in5351b

Abstract: 0505-0671 EN 50065-1 LAL05TB120K PLT-22 MOTOROLA Neuron Chip 470k RESISTORS 50065-1 Using the LONWORKS PLT- 22 Power Line Transceiver PL-20A-LOW
Contextual Info: Using the LONWORKS PLT-22 Power Line Transceiver in European Utility Applications 70kHz – 95kHz Operation Version 1 Corporation 078-0180-01A Echelon, LON, LON W ORKS, LonBuilder, NodeBuilder, LonManager, LonTalk, LON MARK , Neuron, 3120, 3150, the LonUsers logo, the LON MARK logo, and

5H MARKING

Abstract: PG05HSUSC mark J2 marking 5h
Contextual Info: SEMICONDUCTOR PG05HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 5H 1 0 1 2 1 No. Item Marking Description Device Mark 5H PG05HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

Contextual Info: EDE2508AEBG, EDE2516AEBG Package Drawing 60-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 9.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.20 max. S 0.35 ± 0.05 0.1 S 60-φ0.45 ± 0.05 φ0.15 M S A B 0.8 B 8.0 A INDEX MARK 1.6 6.4 0.8 ECA-TS2-0225-01 Data Sheet E1175E20 Ver. 2.0

E1390E30

Abstract: EDE1108AFSE EDE1104AFSE
Contextual Info: EDE1104AFSE, EDE1108AFSE Package Drawing 60-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 10.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.18 max. S 0.1 S 0.32 ± 0.05 B φ0.15 M S A B 0.8 60-φ0.45 ± 0.05 8.0 A INDEX MARK 1.6 0.8 6.4 ECA-TS2-0286-01 Data Sheet E1390E30 Ver. 3.0

CBVK741B019

Abstract: F63TNR FDG6302P FFB3904 FFB3906 FFB3946 FMB3946 SC70-6 318 SC70-6
Contextual Info: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AB FFB3946 / FMB3946 FMB3946 FFB3946 B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .002 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is designed for use as a general purpose

96-ball FBGA

Abstract: EDJ1108BBSE EDJ1116BBSE
Contextual Info: EDJ1104BBSE, EDJ1108BBSE, EDJ1116BBSE 96-ball FBGA Unit: mm 8.0 ± 0.1 0.2 S B 13.5 ± 0.1 INDEX MARK 0.2 S A 0.2 S 1.17 max. S 0.1 S 0.32 ± 0.05 96-φ0.45 ± 0.05 φ0.12 M S A B 0.4 A 12.0 0.8 B INDEX MARK 1.6 0.8 6.4 ECA-TS2-0277-01 Data Sheet E1375E50 Ver. 5.0

PG08HSUSC

Contextual Info: SEMICONDUCTOR PG08HSUSC MARKING SPECIFICATION USC PACKAGE 1. Marking method Laser Marking 2. Marking CATHODE MARK 2 8H 1 0 1 2 1 No. Item Marking Description Device Mark 8H PG08HSUSC hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character]

USFB073

Contextual Info: SEMICONDUCTOR USFB073 MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 73 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 73 USFB073 * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

plessey mark 22 connectors

Abstract: plessey connector assembly CT 00 RT 53884 05124 circular connector plessey connectors AB Connectors "1.6 - 20 UNEF-2A LL 20 AB plessey mark 14 connectors
Contextual Info: Mk 22 Connectors Index CIRCULAR CONNECTORS MARK 22 General Description and Classification The Mark 22 Connector Family Orientation Insulator Shelf Size/Contact Arrangements 1 2 3 4, 5 Free U nit Cable Clamping Style A Free U nit with Shrink Sleeve Outlet Style G

USFZ5.6V

Contextual Info: SEMICONDUCTOR USFZ5.6V MARKING SPECIFICATION USF PACKAGE 1. Marking method Laser Marking 2. Marking 2 56 0 1 1 CATHODE MARK No. Item Marking Description Device Mark 56 USFZ5.6V * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method