SC74A
Abstract: ME-R5511N R5511N022DB transistor SOT-23-5 R5511N004CB R5511N008CB R5511N009BB R5511N010AB R5511N011AB R5511N018AB
Text: MARK INFORMATION ME-R5511N-0510 R5511N SERIES MARK SPECIFICATION • SOT-23-5 SC-74A 1 • 2 3 4 1 , 2 4 , 5 , 3 5 Part Number vs. Product Code Part Number Product Code 1 2 3 R5511N004CB N R5511N008CB N 1 R5511N009BB N 2 R5511N010AB N 3 R5511N011AB N 4 R5511N018AB
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ME-R5511N-0510
R5511N
OT-23-5
SC-74A)
R5511N004CB
R5511N008CB
R5511N009BB
R5511N010AB
R5511N011AB
R5511N018AB
SC74A
ME-R5511N
R5511N022DB
transistor SOT-23-5
R5511N004CB
R5511N008CB
R5511N009BB
R5511N010AB
R5511N011AB
R5511N018AB
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT2369 SILICON PLANAR EPITAXIAL SWITCHING TRANSISTOR N–P N transistor Mark ing CMBT2369 = lJ PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm
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OT-23
CMBT2369
C-120
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A12 marking
Abstract: A12S MARKING A12 SOT-23 n-channel SOT-89 P-channel A12 s M/TOREX MARKING RULE
Text: XP13/15/16 Series •MARKING RULE ① Represents channel and product group MARK CHANNEL/PRODUCT GROUP ●XP13x Series 1 2 3 4 5 ①②③ N-Channel, Single P-Channel, Single N-Channel, Dual P-Channel, Dual N-Channel, P-Channel, Complementary ②,③ Represents Product number
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XP13/15/16
XP13x
XP131A*
XP132A*
XP133A*
XP134A*
XP135A*
XP15x
OT-23
XP16x
A12 marking
A12S
MARKING A12 SOT-23
n-channel SOT-89
P-channel
A12 s
M/TOREX MARKING RULE
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Untitled
Abstract: No abstract text available
Text: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBF102
MMBF102
OT-23
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MMBF102
Abstract: fairchild amplifier Fairchild Semiconductor - Process Fairchild Semiconductor
Text: MMBF102 N-Channel RF Amplifier Features • This device is designed primarily for electronic switching applications such as low On Resistance analog switching. • Sourced from process 50 SOT - 23 Mark : 61Y Absolute Maximum Ratings* Ta=25°C unless otherwise noted
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MMBF102
MMBF102
OT-23
fairchild amplifier
Fairchild Semiconductor - Process
Fairchild Semiconductor
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BCW65C
Abstract: No abstract text available
Text: N BCW65C C E SOT-23 B Mark: ED NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 500 mA. Sourced from Process 19. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BCW65C
OT-23
BCW65C
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5485 transistor
Abstract: DATASHEET OF TRANSISTOR 2N5485 MMBF5484 OF TRANSISTOR 2N5485 2N5485 equivalent 2N5484 2N5485 2N5486 CBVK741B019 MMBF5485
Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching
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2N5484
MMBF5484
MMBF5484
MMBF5485
MMBF5486
2N5484
2N5485
2N5486
OT-23
5485 transistor
DATASHEET OF TRANSISTOR 2N5485
OF TRANSISTOR 2N5485
2N5485 equivalent
2N5485
2N5486
CBVK741B019
MMBF5485
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BCV27
Abstract: No abstract text available
Text: N BCV27 C E SOT-23 Mark: FF B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCV27
OT-23
BCV27
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5-486
Abstract: 5484 junction MMBF5485 6B-6M cg100
Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G G S S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching
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2N5484
MMBF5484
2N5485
2N5486
MMBF5485
MMBF5486
OT-23
5-486
5484 junction
6B-6M
cg100
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BCW68C
Abstract: BCW68G
Text: N BCW68G C E SOT-23 B Mark: DG PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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BCW68G
OT-23
BCW68C
BCW68G
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BCV26
Abstract: PNP DARLINGTON SOT-23
Text: N BCV26 C E SOT-23 B Mark: FD PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter
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BCV26
OT-23
BCV26
PNP DARLINGTON SOT-23
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2N5486
Abstract: 2N5484 2N5485 CBVK741B019 MMBF5484 MMBF5485 MMBF5486
Text: 2N5484 / 5485 / 5486 / MMBF5484 / 5485 / 5486 MMBF5484 MMBF5485 MMBF5486 2N5484 2N5485 2N5486 G S G S TO-92 SOT-23 D D Mark: 6B / 6M / 6H NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed primarily for electronic switching
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2N5484
MMBF5484
MMBF5484
MMBF5485
MMBF5486
2N5484
2N5485
2N5486
OT-23
2N5486
2N5485
CBVK741B019
MMBF5485
MMBF5486
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Untitled
Abstract: No abstract text available
Text: PN4391 / 4392 / 4393 / MMBF4391 / 4392 / 4393 MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 G S G S TO-92 SOT-23 D D Mark: 6J / 6K / 6G NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample
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PN4391
MMBF4391
MMBF4391
MMBF4392
MMBF4393
PN4391
PN4392
PN4393
OT-23
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MMBF4091
Abstract: No abstract text available
Text: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample
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PN4091
MMBF4091
PN4092
PN4093
MMBF4092
MMBF4093
OT-23
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4093 N
Abstract: 4093 application 4093 datasheet MMBF4091 CBVK741B019 J111 MMBF4092 MMBF4093 PN4091 PN4092
Text: PN4091 / 4092 / 4093 / MMBF4091 / 4092 / 4093 MMBF4091 MMBF4092 MMBF4093 PN4091 PN4092 PN4093 G D G S TO-92 S SOT-23 D Mark: 61J / 61K / 61L NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample
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PN4091
MMBF4091
MMBF4091
MMBF4092
MMBF4093
PN4091
PN4092
PN4093
OT-23
4093 N
4093 application
4093 datasheet
CBVK741B019
J111
MMBF4092
MMBF4093
PN4092
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4392
Abstract: 4393
Text: PN4391 / 4392 / 4393 / MMBF4391 / 4392 / 4393 MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 G S G S TO-92 SOT-23 D D Mark: 6J / 6K / 6G NOTE: Source & Drain are interchangeable N-Channel Switch This device is designed for low level analog switching, sample
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PN4391
MMBF4391
PN4392
PN4393
MMBF4392
MMBF4393
OT-23
4392
4393
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Untitled
Abstract: No abstract text available
Text: H E M iQ Q N P U S T O R PN2222A C< B' MMBT2222A PZT2222A TO-92 SOT-23 B SOT-223 Mark: 1P MMPQ2222 NMT2222 Mark: .1B SOIC-16 NPN General Purpose Amplifier This device is for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Pro
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PN2222A
MMBT2222A
PZT2222A
OT-23
OT-223
MMPQ2222
NMT2222
SOIC-16
PN2222A
MMBT2222A
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NPN sot23 mark NF
Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
Text: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.
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BC846A
BC846B
OT-23
BC847A
BC847B
BC847C
BC846
BC847
NPN sot23 mark NF
BC846B
BC847C
S0113D
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Untitled
Abstract: No abstract text available
Text: PN2369A / MMBT2369A / MMPQ2369 D iscrete P O W E R & S ig n a l T e c h n o lo g ie s National Semiconductor PN2369A MMBT2369A SOT-23 MMPQ2369 B SOIC-16 Mark: 1S NPN Switching Transistor This device is designed for high speed saturation switching at collector
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PN2369A
MMBT2369A
MMPQ2369
PN2369A
MMBT2369A
OT-23
SOIC-16
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MMBF4391
Abstract: PN4392 PN4393 J111 MMBF4392 MMBF4393 PN4391
Text: S em ico n d u cto r" PN4391 PN4392 PN4393 MMBF4391 MMBF4392 MMBF4393 SOT-23 Mark: 6 J/6 K /6 G N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J 111 for characteristics.
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PN4391
PN4392
PN4393
MMBF4391
MMBF4392
MMBF4393
OT-23
PN4391
PN4392
PN4393
J111
MMBF4393
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MMBT3702
Abstract: MMBT4403 2T MMBT2907 MMBT2907A MMBT4403 MMPQ2907 MMPQ6502
Text: This I O- Material In □ b-1 t-1 UJ Discrete POWER & Signal Technologies . É f^ Æ N a t i o n a l Semiconductor'" \y . Surface Mount Transistors CD Copyrighted □ O -C Ln a -p j: - i -J PNP General Purpose Amplifiers and Switches Device No. SOT-23 Mark
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OT-23
MMBT2907
O-236
MMBT3702
MMBT4403
MMPQ2907
SO-16
MMPQ6502*
MMBT3702
MMBT4403 2T
MMBT2907
MMBT2907A
MMBT4403
MMPQ6502
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l5 transistor PNP
Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Text: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high
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MPSA64
MMBTA64
OT-23
PZTA64
OT-223
004G77S
l5 transistor PNP
PNP DARLINGTON SOT-23
MMBTA64
MPSA64
PZTA64
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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pn4391
Abstract: process 51
Text: V : iC D N D U C T C 'R MMBF4391 MMBF4392 MMBF4393 PN4391 PN4392 PN4393 TO-92 G SOT-23 D S Mark: 6J / 6K / 6G N-Channel Switch This device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Process 51. See J111 for characteristics.
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PN4391
PN4392
PN4393
MMBF4391
MMBF4392
MMBF4393
PN4393
process 51
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