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    MARKING 02J Search Results

    MARKING 02J Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING 02J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    sst5114

    Abstract: No abstract text available
    Text: SST502 Series Vishay Siliconix Current Regulator Diodes—POV min 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) PRODUCT SUMMARY Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43


    Original     		PDF SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 O-236 sst5114

    SST510

    Abstract: SST507 vishay 70711 SST502 SST503 SST504 SST505 SST506 SST507 SST508
    Text: SST502 Series Vishay Siliconix Current Regulator Diodes—POV min 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) PRODUCT SUMMARY Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43


    Original     		PDF SST502 SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST510 SST507 vishay 70711 SST503 SST504 SST505 SST506 SST507 SST508

    SST508 Vishay

    Abstract: SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510
    Text: SST502 Series Vishay Siliconix Current Regulator Diodes—POV min 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) PRODUCT SUMMARY Anode Part Number Typ IF (mA) Marking Part Number Typ IF (mA) Marking SST502 0.43


    Original     		PDF SST502 SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST508 Vishay SST503 SST504 SST505 SST506 SST507 SST508 SST509 SST510

    cny70

    Abstract: TCST1230 TCPT1300
    Text: CNY70 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E D • Peak operating distance: < 0.5 mm


    Original     		PDF CNY70 CNY70 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TCST1230 TCPT1300

    Untitled

    Abstract: No abstract text available
    Text: CNY70 www.vishay.com Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E D • Peak operating distance: < 0.5 mm


    Original     		PDF CNY70 CNY70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Motorola transistor smd marking codes

    Abstract: SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d
    Text: Eugene Turuta 2 - pins SOT - 89 databook 3 - pins Acti ve Activ SMD components mar king codes marking Introduction SMD-codes for semiconductor components in 3-pins cases SMD-codes for semiconductor components in SOT-89 cases SMD-codes for semiconductor components in BGA and LPP cases


    Original     		PDF OT-89 OT-223 C-120, 2001MD, Motorola transistor smd marking codes SMD TRANSISTOR MARKING 5c SMD code smd TRANSISTOR code marking 2F toshiba smd marking code transistor TRANSISTOR SMD MARKING CODE 1P smd transistor 5c Diode SOT-23 marking 15d SMD TRANSISTOR MARKING 6B TRANSISTOR SMD MARKING CODE 1d

    MYS 99

    Abstract: STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics
    Text: AN926 Application note Brand traceability Introduction To ensure traceability to specific assembly and test operations, ST clearly brands a date code on every device, as well as an encapsulation code on CAPHAT products. STMicroelectronics is implementing a new marking and traceability scheme due to the sizes


    Original     		PDF AN926 MYS 99 STMicroelectronics marking code date MYS 99 STMicroelectronics Date Code Marking STMicroelectronics STMicroelectronics date code format st marking code st MYS 99 stmicroelectronics assembly site date code format LOT code stmicroelectronics marking code stmicroelectronics

    transistor k74

    Abstract: transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k
    Text: IG N TSA1201 12-BIT, 50MSPS, 150mW A/D CONVERTER P 40mW @5Msps, 150mW @ 50Msps P 2.5V supply voltage with 2.5V/3.3V compatiP P P P Temperature Range D Package Conditioning Marking TSA1201IF -40 C to +85 C TQFP48 Tray SA1201I TSA1201IFT -40 C to +85 C TQFP48


    Original     		PDF 12-BIT, 50MSPS, 150mW 150mW 50Msps 15MHz TSA0801, transistor k74 transistor SMD k74 smd TRANSISTOR code marking 7k transistor k74 smd lg dd SMD TRANSISTOR MARKING NK TRANSISTOR SMD MARKING CODE 8D N7 2C SMD Transistor transistor SMD MARKING CODE 772 smd transistor 7k

    Untitled

    Abstract: No abstract text available
    Text: 2SC4083 NPN Silicon Transistor 3 P b Lead Pb -Free 1 FEATURES: 1. BASE 2. EMITTER 3. COLLECTOR * Radio frequency amplifier * High transition frequency * High gain with low collector-to base time constant * Low noise (NF) * Marking: 1D 2 SOT-323(SC-70) Maximum Ratings ( TA=25°C unless otherwise noted)


    Original     		PDF 2SC4083 OT-323 SC-70) 500MHz 500MHz 02-Jun-10

    TCPT1300

    Abstract: CE marking code
    Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E 21835 D Top view 19158_1 DESCRIPTION The CNY70 is a reflective sensor that includes an infrared


    Original     		PDF CNY70 CNY70 2002/95/EC 2002/96/EC 11-Mar-11 TCPT1300 CE marking code

    CNY70

    Abstract: tcrt500 TCST1030L CE marking code
    Text: CNY70 Vishay Semiconductors Reflective Optical Sensor with Transistor Output Marking area FEATURES • Package type: leaded • Detector type: phototransistor • Dimensions L x W x H in mm : 7 x 7 x 6 E 21835 D Top view 19158_1 DESCRIPTION The CNY70 is a reflective sensor that includes an infrared


    Original     		PDF CNY70 CNY70 2002/95/EC 2002/96/EC 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 tcrt500 TCST1030L CE marking code

    83854

    Abstract: 02-JUN 180MILS
    Text: VISHAY Vishay Semiconductors Part Marking 1.2±0.2 mm (0.6±0.3 mm) VDE logo XXXXXXWWW XXXX V D E XXXXY RL (1.2±0.2 mm) (1.2±0.2 mm) 15 mils (0.4±0.2 mm) (0.6±0.1 mm) 0.89 mm dia. (Pin 1 Identifier) 17946 Figure 1. 6-pin and 8-pin SSRs XXXXY LH 1546


    Original     		PDF 02-Jun-03 83854 02-JUN 180MILS

    Untitled

    Abstract: No abstract text available
    Text: AZ5123-02J Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection Preliminary Features ESD Protect for 2 Lines with Bi-directional z Provide ESD protection for the protected line to z IEC 61000-4-2 ESD ±15kV (air), ±15kV (contact)


    Original     		PDF AZ5123-02J 5/50ns) AZ5123-02J FBP1006P03E05

    Amazing Microelectronics

    Abstract: No abstract text available
    Text: AZ5125-02J Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection Preliminary Features ESD Protect for 2 Lines with Bi-directional z Provide ESD protection for the protected line to z IEC 61000-4-2 ESD ±15kV (air), ±15kV (contact)


    Original     		PDF AZ5125-02J 5/50ns) FBP1006P03E05 Amazing Microelectronics

    Untitled

    Abstract: No abstract text available
    Text: AZ5023-02J Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection Features AZ5023-02J is a unique design which includes proprietary clamping cell in a single package. During transient conditions, the proprietary clamping cell prevents over-voltage on the power


    Original     		PDF AZ5023-02J AZ5023-02J 5/50ns) WBFBP-03E FBP1006P03E05.

    Untitled

    Abstract: No abstract text available
    Text: SHV-02JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 1.0 kV ▪ Low Forward Voltage, VF : 2.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA


    Original     		PDF SHV-02JN UL94V-0 SHV-02JN SHV02JN-DS 200ty

    Untitled

    Abstract: No abstract text available
    Text: AZ5015-02J Transient Voltage Suppressing Device Tiny Pacakge for ESD/Transient Protection Features AZ5015-02J is a unique design which includes proprietary clamping cells in a single package. During transient conditions, the proprietary clamping cell prevents over-voltage on the power


    Original     		PDF AZ5015-02J AZ5015-02J 5/50ns) WBFBP-03E FBP1006P03E05.

    Untitled

    Abstract: No abstract text available
    Text: SHV-02JN High Voltage Rectifier Diode Features and Benefits Description ▪ High Peak Reverse Voltage, VRM : 1.0 kV ▪ Low Forward Voltage, VF : 2.0 V max. at IF = 10 mA ▪ Peak Forward Surge Current, IFSM : 3 A ▪ Average Forward Current, IF(AV) : 30 mA


    Original     		PDF SHV-02JN UL94V-0 SHV-02JN SHV02JN-DS

    marking L2

    Abstract: No abstract text available
    Text: SST502 Series Vishay Siliconix Current Regulator Diodes— P o v m in 45 V SST502 SST504 SST506 SST508 SST510 SST503 SST505 SST507 SST509 SST511 TO-236 (SOT-23) > PRODUCT SUMMARY Part Number Typ lF (mA) Part Number tvp if Marking (mA) Marking S ST502 0.43


    OCR Scan     		PDF SST502 SST503 SST504 SST505 SST506 SST507 SST508 SST509 O-236 marking L2

    Untitled

    Abstract: No abstract text available
    Text: BCW67, A, B, C BCW68, F, G, H GENERAL PURPOSE TRANSISTOR P -N -P transistor Marking PACKAGE OUTLIN E DETAILS ALL DIM EN SION S IN mm BCW67A = DA BCW67B = DB BCW67C » DC BCW68F = DF BCW68G = DG BCW68H = DH 3.0 2.8 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR


    OCR Scan     		PDF BCW67, BCW68, BCW67A BCW67B BCW67C BCW68F BCW68G BCW68H 67series BCW67A,

    TRANSISTOR BL 100

    Abstract: CSC2712 CSC2712BL CSC2712GR CSC2712Y
    Text: CDU CSC2712 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor PA CKA G E OU TLIN E DETAILS A LL DIM ENSIO NS IN m m Marking CSC2712Y=1E CSC2712GR G =1 F CSC2712BL(L)=1 G _3.0_ 2.8 0.14 0.48 0.33 Pin configuration 3 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.6


    OCR Scan     		PDF CSC2712 CSC2712Y CSC2712GR CSC2712BL TRANSISTOR BL 100 CSC2712

    82HS641B

    Abstract: 82HS641B/BJA 82HS641 8200901JX 8200902JA 82HS641A CDFP M38510/8200901JA 93Z667DMQB45 e174
    Text: R EV ISIO N S A P P R O V ED D A TE YR-MO-DA D ESC R IPTIO N LTR Redrawn with changes. Delete vendor C A G E 27014 for PINs 01J , 01L, 013, 02J , 02L, 023, 03J, 03L, and 033. Add vendor C A G E 07933 for PINs 01 J , 01X , and 01L Change vendor C A G E 18324 similar PIN for


    OCR Scan     		PDF T00470Ã 82HS641B 82HS641B/BJA 82HS641 8200901JX 8200902JA 82HS641A CDFP M38510/8200901JA 93Z667DMQB45 e174