24-hour
Abstract: NE46134 NE85634
Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 34 0.41 +0.03 -0.05 1.5±0.1 0.8 MIN E 0.42±0.06 4.5±0.1 1.5 C 0.47±0.06 1.6±0.2 1.5 B 0.42±0.06 2.5±0.1 4.0±0.25 PART NUMBER MARKING
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NE46134
NE85634
24-Hour
NE46134
NE85634
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STw3500
Abstract: tunable antenna IEC6100-4-2 JESD97 wcdma receiver STW3550 ic tad 2070
Text: 34 .80 7IRELESS STW3550 4-band WCDMA receiver module Preliminary Data Features • Green product: lead-free/RoHs compliant ■ True single-chip module, 4 band WCDMA RF receiver from antenna input to digital interface to base band – SAW filters integrated inside module
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STW3550
STw3500
tunable antenna
IEC6100-4-2
JESD97
wcdma receiver
STW3550
ic tad 2070
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Untitled
Abstract: No abstract text available
Text: Surface Acoustic Wave Filter SAW Filter TQS-939EA-7R Application Features Ultra miniature size : 2.5(W) x 2.0(D) x 1.1(H)mm High attenuation RF filter for GPS Specifications Type TQS-939EA-7R Nominal frequency 1575.42 MHz Pass band 1573.42 to 1577.42 MHz
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TQS-939EA-7R
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DIODE MARKING CODE A1
Abstract: RFID 5.8Ghz HSMS286F marking code e1 DIODE 286E HSMS-286F HSMS-286K package marking AVAGO DATE CODE MARKING sc70-3 PCB PAD
Text: Products > RF ICs/Discretes > Schottky Diodes > Surface Mount > HSMS-286F HSMS-286F High frequency detector diode Description Lifecycle status: Active Features The HSMS-286F family of biased detector diodes have been designed and optimised for use from 915MHz to 5.8GHz. They are ideal for RF/ID and RF tag applications as well as large
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HSMS-286F
HSMS-286F
915MHz
14Ohms,
HSMS-286x
HSMS286x
OT-363
SC-70
DIODE MARKING CODE A1
RFID 5.8Ghz
HSMS286F
marking code e1 DIODE
286E
HSMS-286K
package marking
AVAGO DATE CODE MARKING
sc70-3 PCB PAD
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smd diode marking 325
Abstract: F3256
Text: SAW Bandpass Filter F3256 z RF bandpass filter z High attenuation z Usable bandwidth 6.6MHz z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device SMD Package 2.08±0.15 Package Dimensions 5.00±0.15 1.2±0.15 3 7 7 1 6 6 2 5 5 3 4 1.27±0.05
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F3256
300mm/min
NS3002-AS01
smd diode marking 325
F3256
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4264
Abstract: F4264
Text: SAW Bandpass Filter F4264 Features z RF bandpass filter z High attenuation z Usable bandwidth 4MHz z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device SMD Package 1.00±0.15 1.90±0.15 0.44 3.80±0.15 0.64±0.05 Package Dimensions
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F4264
300mm/min
NS3009-AS02
4264
F4264
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GEX 51 DIODE
Abstract: Gex DIODE Gex 66 diode marking code SM diode 218 Gex marking code KE diode diode GEP 86 A DIODE gde 18 diode gde 78 Diode GEG
Text: SURFACE MOUNT TVS DIODE Electrical Characteristics, 5.0 to 30 Volts TRANSIENT VOLTAGE SUPPRESSOR DIODE Operating Teperature: -55°c to 150°c RF Working Break Down Maximum Maximum Reverse Part Peak Voltage Clamping Current & Leakage Number Reverse VBR @ IT Voltage
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C5DB02
GEX 51 DIODE
Gex DIODE
Gex 66 diode
marking code SM diode
218 Gex
marking code KE diode
diode GEP 86 A
DIODE gde 18
diode gde 78
Diode GEG
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947 smd
Abstract: 4948
Text: SAW Bandpass Filter F9472 Features z RF bandpass filter z High attenuation z Usable bandwidth 25MHz z No matching 50Ω single-ended operation z Ceramic Surface Mounted Device SMD Package 1.00±0.15 1.90±0.15 0.44 3.80±0.15 0.64±0.05 Package Dimensions
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F9472
25MHz
300mm/min
DR3008-PS02
947 smd
4948
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SOIC8 package
Abstract: rf match soic-8 c101 JESD22-A114 J-STD-020B MH103A MH103A-G MH103A-PCB
Text: MH103A The Communications Edge TM High Dynamic Range UMTS-Band MMIC Mixer Product Features Product Information Product Description Functional Diagram • +34 dBm IIP3 • RF: 1900 – 2200 MHz • LO: 1600 – 2150 MHz • IF: 50 – 300 MHz • +17 dBm Drive Level
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MH103A
MH103A
JESD22-A114
JESD22-C101
J-STD-020B
1-800-WJ1-4401
SOIC8 package
rf match
soic-8 c101
JESD22-A114
J-STD-020B
MH103A-G
MH103A-PCB
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emc fi
Abstract: filters B84143-B400-S20 B84144 B84143-B320-S20 Converter for Induction Heating B84144-G500-S B84143-G20-R11 SPACE POWER ELECTRONICS B84142-B16-R
Text: Filters for Converters and Power Electronics Collection 2000 http://www.epcos.com Filters for Converters and Power Electronics EMC filters are indispensable in industrial installations when it comes to preventing RF disturbance in order to ensure trouble-free operation. The filters reduce both RFI emission and susceptibility to
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SSB0999-Z
B84144
B84144-A16-R
-A36-R
B84144-A50-R
B84144-A80-R
B84144-A120
-A150-R
B84144-A180-R
emc fi
filters
B84143-B400-S20
B84144
B84143-B320-S20
Converter for Induction Heating
B84144-G500-S
B84143-G20-R11
SPACE POWER ELECTRONICS
B84142-B16-R
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7476
Abstract: 7824
Text: SAW Bandpass Filter F9421 Features z RF bandpass filter for UCAM z Usable bandwidth 30MHz 927.5MHz ~ 957.5 MHz z No matching single-ended operation z Ceramic Surface Mounted Device Package ( 3.0 mm x 3.0 mm ) Package Dimensions 1 2 I 9421 3 6 6 1 5 5 2
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F9421
30MHz
300mm/min
NR4009-AS01
7476
7824
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Untitled
Abstract: No abstract text available
Text: TQS5200 PRELIMINARY DATASHEET WLAN PRODUCTS OUT1 CTRL1 1 6 2 5 GND SPDT Switch for Singleband and Dual-band, 802.11a/b/g Systems RFC OUT2 7 CTRL2 4 3 Features Integrated SPDT Switch for Singleband and Dual-band 802.11a/b/g WLAN Systems Product Description:
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TQS5200
11a/b/g
11a/b/g
TQS5200
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B39202-B7777-C810
Abstract: B7777
Text: SAW Components Data Sheet B7777 SAW Components B7777 1950,0 MHz Low-Loss Filter for Mobile Communication Data Sheet Chip sized SAW package Features 0,1 ● Low-loss RF filter for W-CDMA mobile tele- 1 0,1 2 0,6 bottom view Terminals ● Ni, gold-plated Data Sheet
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B7777
B39202-B7777-C810
B39202-B7777-C810
B7777
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Untitled
Abstract: No abstract text available
Text: BGA751N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA751N7
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Untitled
Abstract: No abstract text available
Text: BGA711N7 SiGe Bipolar 3G/3.5G/4G Single-Band LNA Data Sheet Revision 3.1, 2013-01-31 RF & Protection Devices Edition 2013-01-31 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer
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BGA711N7
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RF transistor marking IN SOT-89
Abstract: JESD97 J-STD-020B PD84001
Text: PD84001 RF power transistor The LdmoST plastic family Features • Excellent thermal stability ■ Common source configuration ■ Broadband performances POUT = 1W with 15dB gain @ 870MHz ■ Plastic package ■ ESD protection ■ Supplied in tape and reel
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PD84001
870MHz
2002/93/EC
OT-89
PD84001
RF transistor marking IN SOT-89
JESD97
J-STD-020B
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Untitled
Abstract: No abstract text available
Text: Technical Data MMM5062/D Rev. 2, 07/2002 MMM5062 Quad-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5062 See Figure 30 Module The MMM5062 is a quad-band single supply RF Power Amplifier for GSM850/GSM900/
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MMM5062/D
MMM5062
MMM5062
GSM850/GSM900/
DCS1800/PCS1900
GSM850/900
DCS1800
PCS1900
MMM5062/D
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MURATA GSM FILTER
Abstract: No abstract text available
Text: Advance Information MMM5063/D Rev. 0.1, 07/2003 MMM5063 Tri-Band GSM GPRS 3.5 V Power Amplifier Scale 1:1 Package Information Plastic Package Case 1383 (Module, 7x7 mm) Ordering Information Device Device Marking Package MMM5063 See Figure 25 Module The MMM5063 is a tri-band single supply RF Power Amplifier for GSM900/DCS1800/
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MMM5063/D
MMM5063
MMM5063
GSM900/DCS1800/
PCS1900
GSM900
DCS1800
MMM5063/D
MURATA GSM FILTER
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1750 MHz Filter
Abstract: B39202-B7754-C810 B7754
Text: SAW Components Data Sheet B7754 SAW Components B7754 1950,0 MHz Low-Loss Filter for Mobile Communication Data Sheet Chip sized SAW package DCS4D Features ● Low-loss RF filter for W-CDMA mobile tele- phone system, transmit path High stopband attenuation Usable passband 60 MHz
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B7754
B39202-B7754-C810
1750 MHz Filter
B39202-B7754-C810
B7754
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RLS135
Abstract: No abstract text available
Text: Diode, band switching, leadless RLS135 Dimensions Units : mm This small diode is suitable for high density surface mounting on a printed circuit board. CATHODE BAND Features • • available in LLDS (LL-34) package part marking, see following table •
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RLS135
LL-34)
RLS135
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1SS135
Abstract: No abstract text available
Text: 1SS135 Diode, band switching, leaded Dimensions Units : mm These diodes are in a glass sealed envelope and are suitable for lead mounting on printed circuit boards. CATHODE BAND Features • • available in DO-34 package part marking, see following table
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1SS135
DO-34
0015H
1SS135
001S44A
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diode pj 916
Abstract: IC la 4148
Text: A I R C H I L D is c re te PO W E R & S ig n a l Technologies D SEMICONDUCTOR tm 1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 CO LO R BAND MARKING DEVICE LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION OF THE CATHODE TERMINAL
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914/A/B
916/A/B
FDLL914
FDLL914A
FDLL914B
FDLL916
FDLL916A
FDLL916B
diode pj 916
IC la 4148
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1728830000
Abstract: No abstract text available
Text: Range- S2L/B2L 3.5 Pin headers S2L3.5/180F rfiJfjMrJTwfäswlrfiiifftlJfJJvf.}f HNIHIIHIHiHNHHHHIHMHHfll"i rfSstfiffUtilt iff¿4ts/fA/’ JL U> ri CM _i CQ Technical data VDE UL CSA Rated voltage (V 50* 150 50 Rated current (A) 7.5 1> Technical data • Rated voltage (V)
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5/180F
So80F
5/34/180F
5/36/180F
1728830000
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saj 141
Abstract: MPR 55 F resistor ceramic
Text: Detailed Product Index cn -o c BOOKS FILM CAPACITORS CERAMIC CAPACITORS INDUS 1 RIAL RErERENCE S u rfa c e M ount T e c h n o lo g y A scientific Guide to Surface M ount Technology S etting up In-House Surface M ount Technology Surface M ount & Mixed Technology
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