MARKING 3FS Search Results

MARKING 68W SOT-23

Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
Contextual Info: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06

transistor Bc 540

Abstract: 68W SOT marking codes transistors a1 sot-23 MARKING 68W SOT-23 sot 223 marking code AH dk marking code sot-89 MARKING CODE DH SOT 23 sot-89 MARKING CODE BN 1Bs sot-23 MY sot-89
Contextual Info: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BA 895 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 50-02V BAR 50-03W BAR 50-05 BAR 60 BAR 61 BAR 63 BAR 63-02V BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W

TRANSISTOR 131-6 BJ 946

Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Contextual Info: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise

MARKING 3FS

Contextual Info: BC857BT PNP Silicon AF Transistor • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Complementary type: BC847BT 2 1 Type Marking BC857BT 3Fs Pin Configuration 1=B 2=E VPS05996 Package 3=C

BC847

Abstract: BC857AT BC857BT BC857T SC75
Contextual Info: BC857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B

BC847

Abstract: BC857AT BC857BT BC857T SC75 VPS05996
Contextual Info: BC857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC847.T 2 1 Type Marking Pin Configuration BC857AT 3Es 1=B 2=E 3=C SC75 BC857BT 3Fs 1=B

857T

Abstract: 857BT
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

857T

Abstract: BC857AT BC857BT SC-75
Contextual Info: BC 857T PNP Silicon AF Transistor 3
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs

tr 30 f 124

Abstract: SS124
Contextual Info: SIEMENS BSS 124 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • ^GS th = 1 5 - 2-5 v Pin 1 Pin 2 Type BSS 124 VDS 400 V b 0.12 A Type BSS 124 BSS 124 Ordering Code Q62702-S614 Q67000-S172 flDS(on) 28 Q Pin 3 D G Package Marking TO-92

smd DIODE 3FS

Abstract: smd diode marking 3fs
Contextual Info: Schottky Barrier Diode wnnm o u t l i n e Single Diode D3FS6 U n it! mm Package : 2F W eight 0.16g Typ ij 7 - K v - * ' C ulliod o mm k 3FS 6 8D 60V 3A Feature • /jv s y s M D yîsxMîS. • P rrs m ;F K 5 • Small SMD • P h r s m Rating W T y p e No.

Contextual Info: Ordering number : ENA2236 NDFPD1N150C N-Channel Power MOSFET 1500V, 0.1A, 150Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS on =100Ω(typ.) • Input Capacitance Ciss=80pF(typ.) • 10V drive Specifications TO-220F-3FS Absolute Maximum Ratings at Ta = 25°C

IAV2A

Contextual Info: Ordering number : ENA2232 NDFP03N150C N-Channel Power MOSFET 1500V, 2.5A, 10.5Ω, TO-220F-3FS http://onsemi.com Features • On-resistance RDS on =8Ω(typ.) • Input Capacitance Ciss=650pF(typ.) • 10V drive Specifications TO-220F-3FS Absolute Maximum Ratings at Ta = 25°C

Contextual Info: Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT http://onsemi.com 600V, 10A, VCE sat ;1.5V, TO-220F-3FS Features • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • IGBT IC=20A (Tc=25°C) • Adaption of full isolation type package • 5 s short circuit capability

Contextual Info: Ordering number : EN*A2283 NGTB10N60FG Advance Information http://onsemi.com N-Channel IGBT 600V, 10A, VCE sat ;1.5V, TO-220F-3FS Features • IGBT VCE (sat)=1.5V typ. (IC=10A, VGE=15V) • Adaption of full isolation type package • Enhansment type • 5 s short circuit capability

Contextual Info: Ordering number : ENA1775B TIG056BF N-Channel IGBT http://onsemi.com 430V, 240A, VCE sat ; 3.6V TO-220F-3FS Features • • • Low-saturation voltage Ultrahigh speed switching Enhansment type • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C

transistor C6144

Abstract: 2SC6144 c6144
Contextual Info: Ordering number : ENA1800B 2SC6144SG Bipolar Transistor 50V, 10A, Low VCE sat NPN TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacitance (IC=10A) Adoption of MBIT process

Contextual Info: Ordering number : ENA1368B 2SK4197FS N-Channel Power MOSFET http://onsemi.com 600V, 3.5A, 3.25Ω, TO-220F-3FS Features • • • ON-reistance RDS on =2.5Ω(typ.) Input capacitance Ciss=260pF(typ.) 10V drive TO-220F-3FS Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1368A 2SK4197FS N-Channel Power MOSFET 600V, 3.5A, 3.25Ω, TO-220F-3FS http://onsemi.com Features • • • High-speed switching. Avalanche resistance guarantee. 10V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter

Contextual Info: Ordering number : EN8635A 2SK3745LS N-Channel Power MOSFET http://onsemi.com 1500V, 2A, 13Ω, TO-220F-3FS Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching High reliability Adoption of HVP process Micaless package facilitating mounting

transistor A2222

Abstract: a2222 2sa2222
Contextual Info: Ordering number : ENA1799B 2SA2222SG Bipolar Transistor –50V, –10A, Low VCE sat PNP TO-220F-3FS http://onsemi.com Applications • Relay drivers, lamp drivers, motor drivers Features • • • • Large current capacity (IC=-10A) Adoption of MBIT process

Contextual Info: Ordering number : ENA1796A BFL4004 N-Channel Power MOSFET http://onsemi.com 800V, 6.5A, 2.5Ω, TO-220F-3FS Features • • ON-resistance RDS on =1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive • Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number : ENA1830A BFL4036 N-Channel Power MOSFET http://onsemi.com 500V, 14A, 0.52Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.4Ω (typ.) 10V drive • Input capacitance Ciss=1000pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

FL4037

Contextual Info: Ordering number : ENA1831A BFL4037 N-Channel Power MOSFET http://onsemi.com 500V, 16A, 0.43Ω, TO-220F-3FS Features • • ON-resistance RDS on =0.33Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C

K4087

Abstract: 000-009-30
Contextual Info: Ordering number : ENA0555E 2SK4087LS N-Channel Power MOSFET http://onsemi.com 600V, 14A, 610mΩ, TO-220F-3FS Features • • ON-resistance RDS on =0.47Ω (typ.) 10V drive • Input capacitance Ciss=1200pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C