chip resistor marking
Abstract: NRC06FxxxxTR 604K-Ohm marking 53d marking 34x NRC06F1273TR 511K-Ohm NRC06F21R0TR NRC06F20R5TR NRC06F2000TR
Text: NIC COMPONENTS CORP. www.nicccomp.com NRC06FxxxxTR 0603 Size Thick Film Chip Resistor Marking Guide 3-Digit Marking Codes for +/-1% F tolerance E96 Values RESISTANCE VALUE NIC P/N 3 DIGIT MARKING 10.0 Ohm NRC06F10R0TR 01X 10.2 Ohm NRC06F10R2TR 02X 10.5 Ohm
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NRC06FxxxxTR
NRC06F10R0TR
NRC06F10R2TR
NRC06F10R5TR
NRC06F10R7TR
NRC06F11R0TR
NRC06F11R3TR
NRC06F11R5TR
NRC06F11R8TR
NRC06F12R1TR
chip resistor marking
604K-Ohm
marking 53d
marking 34x
NRC06F1273TR
511K-Ohm
NRC06F21R0TR
NRC06F20R5TR
NRC06F2000TR
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Untitled
Abstract: No abstract text available
Text: 6104500 5x20 Fuse ̋" Plastic Body: Rqn{cokfg"808 Fuse 6104110 5x20 LED 6104600 5x20 Disconnect ̋"Clamp: Jctfgpgf"uvggn."gngevtq/ rncvgf"ykvj"|kpe"{gnqy"ejtqocvgf ̋"Screws: Uvggn."|kpe"rncvgf"cpf" {gnnqy"ejtqocvgf ̋"Marking: 6"unqvu"qp"dqvj"ukfgu ̋"Tracking Resistance: "
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32/24X
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gaas fet marking B
Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source
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QL-1104E-A
July/2008)
GD-26,
MGF4951A/52A
MGF4953A/54A
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF4851A
gaas fet marking B
gaas fet micro-X Package marking
gaas fet marking a
marking K gaas fet
MGF1961A
gaas fet micro-X Package
gaas fet marking J
MGF1964A
MGF1963A
Micro-X marking "K"
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marking ss14
Abstract: ss14 do-214ac SS14 marking SS15 sma ss14 sma SS15 SS16 ss12 marking ss14 do-214ac sma SS13
Text: LESHAN RADIO COMPANY, LTD. SS12 – SS16 1A 1A SCHOTTKY SMA DIODES TYPE Marking SS12 SS13 SS14 SS15 SS16 20 30 40 50 60 S12 S13 S14 S15 S16 V F V IF (A) VRRM(V) 0.50 0.50 0.50 0.70 0.70 1.0 IRMI(µA) IP8M(A) 1000 Package Dimensions Trr(ns) – – – –
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214AC
-SS15
50mVp-p
marking ss14
ss14 do-214ac
SS14
marking SS15 sma
ss14 sma
SS15
SS16
ss12 marking
ss14 do-214ac sma
SS13
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marking code BC
Abstract: Si5445DC
Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX
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Si5445DC
S-63999--Rev.
04-Oct-99
marking code BC
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marking code BC
Abstract: No abstract text available
Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BC XX S
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Si5445DC
S-63999--Rev.
04-Oct-99
marking code BC
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52N20
Abstract: fdb fairchild FDB52N20
Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB52N20
FDB52N20
FDB52N20TM
52N20
fdb fairchild
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP52N20
FDPF52N20T
FDPF52N20T
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9467gh
Abstract: ap9467 ap9467gh AP9467GJ
Text: AP9467GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Single Drive Requirement ▼ Fast Switching Characteristics BVDSS 40V RDS ON 11mΩ ID G 52A S Description Advanced Power MOSFETs from APEC provide the
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AP9467GH/J
O-252
AP9467GJ)
O-251
O-251
9467GJ
9467gh
ap9467
ap9467gh
AP9467GJ
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Untitled
Abstract: No abstract text available
Text: KSM52N20 / KSMF52N20T N-Channel MOSFET 200V, 52A, 0.049Ω TO-220F TO-220 Features • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A • Low gate charge ( Typ. 49nC) • Low Crss ( Typ. 66pF) • Fast switching • 100% avalanche tested • Improve dv/dt capability
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KSM52N20
KSMF52N20T
O-220F
O-220
54TYP
00x45Â
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N-Channel MOSFET 200v
Abstract: FDB52N20 FDB52N20TM
Text: UniFET TM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB52N20
FDB52N20
N-Channel MOSFET 200v
FDB52N20TM
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDB52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB52N20
FDB52N20
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N-Channel MOSFET 200v
Abstract: FDP52N20
Text: TM UniFET FDP52N20 200V N-Channel MOSFET Features Description • 52A, 200V, RDS on = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDP52N20
O-220
FDP52N20
N-Channel MOSFET 200v
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FDP52N20
Abstract: FDP52 FDPF52N20T poweredge 2900
Text: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP52N20
FDPF52N20T
FDP52
FDPF52N20T
poweredge 2900
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FDP52N20
Abstract: FDPF52N20T poweredge 2900
Text: UniFETTM FDP52N20 / FDPF52N20T tm N-Channel MOSFET 200V, 52A, 0.049Ω Features Description • RDS on = 0.041Ω ( Typ.)@ VGS = 10V, ID = 26A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,
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FDP52N20
FDPF52N20T
FDPF52N20T
poweredge 2900
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Untitled
Abstract: No abstract text available
Text: AP9467GS RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low On-resistance BVDSS D 40V RDS ON Single Drive Requirement Fast Switching Characteristics ID G 11m 52A S Description Advanced Power MOSFETs from APEC provide the
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AP9467GS
O-263
O-263
9467GS
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9467g
Abstract: AP9467GS ap9467
Text: AP9467GS RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low On-resistance D ▼ Single Drive Requirement ▼ Fast Switching Characteristics BVDSS 40V RDS ON 11mΩ ID G 52A S Description Advanced Power MOSFETs from APEC provide the
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AP9467GS
O-263
O-263
9467GS
9467g
AP9467GS
ap9467
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W52NK25Z
Abstract: No abstract text available
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
W52NK25Z
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Untitled
Abstract: No abstract text available
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET PRODUCT PREVIEW Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω
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STW52NK25Z
O-247
2004STMicroelectronics
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w52nk25z
Abstract: STW52NK25Z zener diode - C 10 ST st 0560
Text: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY
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STW52NK25Z
O-247
w52nk25z
STW52NK25Z
zener diode - C 10 ST
st 0560
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zener zp 278
Abstract: Zener Diode minimelf Zener diode wz 162 krc 118 056 diode 918b zener diode 182 KD6 Z7 ZENER DIODE 18-2 diode 368b h25b
Text: MCC TM Micro Commercial Components ZENER DIODES 500mW ZENER DIODE / DODO-35 MCC PART NUMBER NOMINAL ZENER VOLTAGE VZ @ IZT VOLTS TEST CURRENT IZT mA MAXIMUM ZENER IMPEDANCE ‘B’ SUFFIX ONLY ZZT @ IZT Ω 1N5221B 2.4 20 30 1N5222B 2.5 20 30 1N5223B 2.7 20
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500mW
DODO-35
1N5221B
1N5222B
1N5223B
1N5224B
1N5225B
1N5226B
1N5227B
1N5228B
zener zp 278
Zener Diode minimelf
Zener diode wz 162
krc 118 056
diode 918b
zener diode 182
KD6 Z7
ZENER DIODE 18-2
diode 368b
h25b
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JMS27656
Abstract: ZD - 98F FFD socapex MIL-PRF-87937 amphenol 900047 DOC-000503-ANG JMS27468 900142 ZD 98F DOC-000030-ANG
Text: Amphenol LJT / HE 308 MIL-DTL-38999 Series I Subminiature cylindrical connectors www.amphenol-socapex.com - www.38999-solutions.com Amphenol <<< LJT / HE 308 Description Amphenol Socapex is a MIL-DTL-38999 series I standard QPL and HE308 qualified manufacturer. The LJT product
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MIL-DTL-38999
38999-solutions
HE308
DOC-000031-ANG/B
JMS27656
ZD - 98F
FFD socapex
MIL-PRF-87937
amphenol 900047
DOC-000503-ANG
JMS27468
900142
ZD 98F
DOC-000030-ANG
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transistor marking A9
Abstract: diode MARKING A9 diode MARKING CODE A9 A9 sot223 mosfet marking a9 L55012 p1 52ax 52LX marking 24b sot-23 51DX
Text: APL5501/2/3 Low IQ, Low Dropout 500mA Fixed Voltage Regulator Features APL5501 BP 5 1 2 3 V IN GND Notebook Computer PDA or Portable Equipments Noise-Sensitive Instrumentation Systems General Description IN 1 8 OU T GND 2 7 GN D GND 3 6 GN D SHDN 4 5 BY P
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APL5501/2/3
500mA
150mA
OT-23-5,
OT-89,
OT-89-5,
OT-223,
O-252
O-252-5
APL5501
transistor marking A9
diode MARKING A9
diode MARKING CODE A9
A9 sot223
mosfet marking a9
L55012
p1 52ax
52LX
marking 24b sot-23
51DX
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TRANSISTOR BI 237
Abstract: NPN/TRANSISTOR BI 237
Text: 2SD1766 Transistor, NPN Features • available in MPT3 MPT, SOT-89, SC-62 package • package marking: 2SD1766; DB-fr, where * is hFE code • Pq = 2 W, when mounted on 40 x 40 x 0.7 mm ceramic substrate • low collector saturation voltage, typically, VCE(Sat)=0.16 V for
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OCR Scan
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2SD1766
OT-89,
SC-62)
2SD1766;
2SB1188
max70
2SD1766
TRANSISTOR BI 237
NPN/TRANSISTOR BI 237
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