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    SI5445DC Search Results

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    SI5445DC Price and Stock

    Vishay Siliconix SI5445DC-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI5445DC-T1 2,920 3
    • 1 -
    • 10 $2.1
    • 100 $1.3125
    • 1000 $0.735
    • 10000 $0.693
    		Buy Now
    Quest Components SI5445DC-T1 2,336
    • 1 $2.8
    • 10 $2.8
    • 100 $2.8
    • 1000 $0.875
    • 10000 $0.77
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    SI5445DC-T1 20
    • 1 $2.475
    • 10 $2.277
    • 100 $1.98
    • 1000 $1.98
    • 10000 $1.98
    		Buy Now

    Vishay Intertechnologies SI5445DC-T1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI5445DC-T1 1,443
    • 1 -
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    Vishay Siliconix SI5445DC-T1-E3

    5200 mA, 8 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI5445DC-T1-E3 140
    • 1 $2.212
    • 10 $2.212
    • 100 $0.8295
    • 1000 $0.8295
    • 10000 $0.8295
    		Buy Now

    Vishay Siliconix SI5445DC

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    NexGen Digital SI5445DC 1,999
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    SI5445DC Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si5445DC Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5445DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5445DC Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5445DC Vishay Telefunken Si5445BDC vs. Si5445DC Comparison Original PDF
    Si5445DC SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5445DC-T1 Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI5445DC-T1 Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF

    SI5445DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code BC

    Abstract: Si5445DC
    Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G S Marking Code BC XX


    Original     		PDF Si5445DC S-63999--Rev. 04-Oct-99 marking code BC

    SI5445DC-T1

    Abstract: 1206 8 ChipFET Si5445BDC Si5445DC
    Text: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: P-Channel, 1.8 V G-S MOSFET Package: 1206-8 ChipFET Pin Out: Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1 Replaces Si5445DC-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si5445BDC Si5445DC Si5445BDC-T1-E3 Si5445DC-T1-E3 Si5445BDC-T1 Si5445DC-T1 09-Nov-06 1206 8 ChipFET

    Si5445DC

    Abstract: No abstract text available
    Text: SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si5445DC 07-Oct-99

    Si5445DC

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF Si5445DC 18-Jul-08

    marking code BC

    Abstract: No abstract text available
    Text: Si5445DC New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –8 8 rDS(on) (W) ID (A) 0.035 @ VGS = –4.5 V "7.1 0.047 @ VGS = –2.5 V "6.2 0.062 @ VGS = –1.8 V "5.7 S 1206-8 ChipFET 1 D D G D D D D G Marking Code BC XX S


    Original     		PDF Si5445DC S-63999--Rev. 04-Oct-99 marking code BC

    marking code BC

    Abstract: No abstract text available
    Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability


    Original     		PDF Si5445DC Si5445DC-T1 08-Apr-05 marking code BC

    Si5445DC

    Abstract: No abstract text available
    Text: Click Here & Upgrade PDF Complete Expanded Features Unlimited Pages Documents SPICE Device Model Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application


    Original     		PDF Si5445DC 20-May-04

    Si5445BDC

    Abstract: Si5445DC Si5445DC-T1
    Text: Specification Comparison Vishay Siliconix Si5445BDC vs. Si5445DC Description: Package: Pin Out: P-Channel, 1.8-V G-S MOSFET 1206-8 ChipFET Identical Part Number Replacements: Si5445BDC-T1-E3 Replaces Si5445DC-T1-E3 Si5445BDC-T1-E3 Replaces Si5445DC-T1


    Original     		PDF Si5445BDC Si5445DC Si5445BDC-T1-E3 Si5445DC-T1-E3 Si5445DC-T1

    2 a diode

    Abstract: Si5445DC Si5445DC-T1 71063 marking code BC
    Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability


    Original     		PDF Si5445DC Si5445DC-T1 S-21251--Rev. 05-Aug-02 2 a diode 71063 marking code BC

    VISHAY BC 047

    Abstract: Si5445DC Si5445DC-T1
    Text: Si5445DC Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) -8 rDS(on) (Ω) ID (A) 0.035 @ VGS = -4.5 V 7.1 0.047 @ VGS = -2.5 V 6.2 0.062 @ VGS = -1.8 V 5.7 S 1206-8 ChipFETt 1 D D G D D D D G S Marking Code BC XX Lot Traceability


    Original     		PDF Si5445DC Si5445DC-T1 18-Jul-08 VISHAY BC 047

    transistor C639-c640

    Abstract: BJT C828 c828 npn transistor datasheet KBC 1091 NU kbc 1091 pin configuration NPN transistor c828 c828 transistor c1583 transistor c1583 c828 npn transistor
    Text: R Intel 830 Chipset Family Platform Design Guide October 2001 Order Number: 298339-002 ® Intel 830M Chipset Family R Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual


    Original     		PDF R1593 R1592 u5003 MAX1718 R1579 pin14 transistor C639-c640 BJT C828 c828 npn transistor datasheet KBC 1091 NU kbc 1091 pin configuration NPN transistor c828 c828 transistor c1583 transistor c1583 c828 npn transistor

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		PDF Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05

    Power Amplifier GSM

    Abstract: smd transistor A1 HB CGY2015 SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier
    Text: INTEGRATED CIRCUITS DATA SHEET CGY2015 GSM/DCS/PCS power amplifier Preliminary specification 2002 Mar 12 Philips Semiconductors Preliminary specification GSM/DCS/PCS power amplifier CGY2015 FEATURES GENERAL DESCRIPTION • 3.5 V nominal supply voltage The CGY2015 is a dual GaAs Monolithic Microwave


    Original     		PDF CGY2015 CGY2015 HVQFN16 SCA74 403506/01/pp24 Power Amplifier GSM smd transistor A1 HB SOT629-1 h2lb BA891 philips rf manual power amplifier circuit diagram with pcb layout power amplifier handbook schematics for a PA amplifier

    eta mos

    Abstract: 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4
    Text: AND8049/D SPICE Device Model NTHS5445T1 P–Channel 1.8 V G–S MOSFET http://onsemi.com APPLICATION NOTE CHARACTERISTICS • • • • • • DESCRIPTION The attached SPICE Model describes typical electrical characteristics of the p–channel vertical DMOS. The


    Original     		PDF AND8049/D NTHS5445T1 r14525 eta mos 20E-3 1100E 135E NTHS5445T1 Si5445DC PMOS MODEL PARAMETERS SPICE 85e4