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    MARKING 61 SOT 163 Search Results

    MARKING 61 SOT 163 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING 61 SOT 163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UMA4NT1, UMA6NT1 Preferred Devices Dual Common Emitter Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com The BRT Bias Resistor Transistor contains a single transistor with a monolithic bias network consisting of two resistors; a series base


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    PDF OT-353

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


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    PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    MMBR571LT1

    Abstract: 2S110
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


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    PDF MMBR571LT1/D MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF5711LT1 2S110

    MRF5711LT1

    Abstract: MMBR571LT1 MRF571 11608A ZO 103 MA 75 603
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


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    PDF MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF5711LT1 MRF571 11608A ZO 103 MA 75 603

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR911LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistors MMBR911LT1 MPS911 . . . designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


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    PDF MMBR911LT1/D MMBR911LT1 MPS911 226AA A/500 MMBR911LT1 MMBR911LT1/D*

    PRF10

    Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


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    PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, PRF10 MBC13916T1 937 motorola 0933 34 motorola zc 527

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


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    PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916/D

    motorola zc 527

    Abstract: S12 sot 23-6
    Text: MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


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    PDF MBC13916 MBC13916 MRFIC0916 MRFIC0916, motorola zc 527 S12 sot 23-6

    sot-23 marking 113

    Abstract: sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MMBR571LT1 MRF571 11608a
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF5711LT1 Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


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    PDF MMBR571LT1/D MMBR571LT1 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 sot-23 marking 113 sot-23 MARKING GU MMBR571L MRF5711LT1 SF-11N MRF571 11608a

    MBC13916

    Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
    Text: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with


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    PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916T1 motorola zc 527 Motorola Zc 34

    rn2015

    Abstract: AT-41533
    Text: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses


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    PDF AT-41511, AT-41533 AT-41511 AT-41533 OT-23, OT143. 5989-2649EN AV02-0798EN rn2015

    AT-41511

    Abstract: AT-41533-TR1G AT-41533 AT415 zo 103 ma S21E AT-41511-TR1G AT-41533-BLKG AV02-0798EN AT-41511-BLKG
    Text: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses


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    PDF AT-41511, AT-41533 AT-41511 AT-41533 OT-23, OT143. 5989-2649EN AV02-0798EN AT-41533-TR1G AT415 zo 103 ma S21E AT-41511-TR1G AT-41533-BLKG AT-41511-BLKG

    MRF571

    Abstract: MMBR571LT1 MRF5711LT1 NF50 11608a J500
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic packages. This


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    PDF MMBR571LT1/D MMBR571LT1 MRF571 MRF5711LT1 MRF5711LT1, MRF571) A/500 MMBR571LT1) MRF5711LT1) MMBR571LT1 MRF571 MRF5711LT1 NF50 11608a J500

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MMBR571LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MMBR571LT1 MPS571 MRF571 MRF5711LT1 NPN Silicon High-Frequency Transistors Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package, as well as


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    PDF MMBR571LT1/D MMBR571LT1 MPS571 MRF571 MRF5711LT1 226AA MRF5711LT1, MRF571) A/500 MMBR571LT1)

    MMBR521LT1

    Abstract: MRF5211LT1
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


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    PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MRF5211LT1

    MMBR521LT1

    Abstract: MRF5211LT1 TO-236-AA
    Text: MOTOROLA Order this document by MMBR521LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 Designed primarily for use in the high–gain, low–noise small–signal amplifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


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    PDF MMBR521LT1/D MMBR521LT1 MRF5211LT1 MMBR521LT1) MRF5211LT1) MMBR521LT1 MMBR521LT1/D* MRF5211LT1 TO-236-AA

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


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    PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71

    melf diode marking

    Abstract: A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT
    Text: PCN PART NUMBER LISTING Part Number PCN Title Rel date Comments 1.5KE100A-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100A-T 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-B 1049 Lead-Free Lead Finish NOT RELEASED 1.5KE100CA-T 1049 Lead-Free Lead Finish


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    PDF 5KE100A-B 5KE100A-T 5KE100CA-B 5KE100CA-T 5KE10A-A 5KE10A-B 5KE10A-T 5KE10CA-B 5KE10CA-T 5KE110A-B melf diode marking A180-WLA RS503s SBR130S3 Schottky melf hall sensor 35l 5KE91A-B PR1005G-A GBPC3504L STPR2020CT

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF9331LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF9331LT1 Designed primarily for use in low power amplifiers to 1.0 GHz. Ideal for pagers and other battery operated systems where low power consumption is


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    PDF MRF9331LT1/D MRF9331LT1 MRF9331LT1/D*

    AT-41533-TR1G

    Abstract: AT-41511 AT-41533 S21E AT-41511-BLK AT-41511-TR1G MARKING CODE 618 SOT23 1820 0183 sot23 1303
    Text: AT-41511, AT-41533 General Purpose, Low Noise NPN Silicon Bipolar Transistors Data Sheet Description Features Avago’s AT-41511 and AT-41533 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41533 uses


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    PDF AT-41511, AT-41533 AT-41511 AT-41533 OT-23, OT-143. 5989-2649EN AV02-0798EN AT-41533-TR1G S21E AT-41511-BLK AT-41511-TR1G MARKING CODE 618 SOT23 1820 0183 sot23 1303

    LTspice

    Abstract: lt08 C1055 LT3008 LT3008MPTS8 3008 so8 LT3008MPTS8#TRPBF
    Text: LT3008 Series 3µA IQ, 20mA, 45V Low Dropout Linear Regulators FEATURES DESCRIPTION n The LT 3008 series are micropower, low dropout voltage LDO linear regulators. The devices supply 20mA output current with a dropout voltage of 300mV. No-load quiescent


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    PDF LT3008 300mV. C1003 C1040 C1055 P86928 06-Oct-2010 LTspice lt08 LT3008MPTS8 3008 so8 LT3008MPTS8#TRPBF

    ON Semiconductor marking

    Abstract: fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline
    Text: DLD601/D Rev. 1, Mar-2001 One-Gate Logic One-Gate Logic ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does


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    PDF DLD601/D Mar-2001 r14525 DLD601 ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 diode w2d SOT-353 MARKING L5 marking code vk, sot-363 va sot-353 1C SOT353 MC74VHC1G135 vsop8 package outline

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


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    PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Silicon PIN Diodes BAR 60 BAR 61 • RF switch • RF attenuator for frequencies above 10 MHz Type Marking Ordering Code tape and reel BAR 60 60 Q62702-A786 Pin Configuration Package1) SOT-143 i• n0 M M kNl o 5i ■• EHA07Q13 BAR 61 Q62702-A120


    OCR Scan
    PDF Q62702-A786 OT-143 Q62702-A120 023SbQS 015DS01 fi235b05 0120EQ2 0535bQS 012D2D3