Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. GENERAL PURPOES LUMH14NDW1T1 dual digital transistors 6 5 4 1 2 3 SC-88/SOT-363 3 (2) (1) R1 Q1 Q2 R1 MAXIMUM RATINGS (TA = 25°C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation
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LUMH14NDW1T1
SC-88/SOT-363
LUMH14NDW1T1
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BFR106
Abstract: No abstract text available
Text: , Unc. LS 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 BFR106 Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 2.5 dB TYP. @VCE = 8 V, lc = 20 mA, f = 900 MHz • High Gain I S2ie I 2 = 10.5 dB TYP. @VCE= 8 V,lc = 70 mA,f = 900 MHz
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BFR106
500MHz
900MHz
BFR106
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Untitled
Abstract: No abstract text available
Text: WT431LT1 PROGRAMMABLE PRECISION REFERENCE P b Lead Pb -Free 3 1 Features: * Programmagle output voltage to 36V. * Low dynamic output impedance 0.2Ω. * Sink current capability of 1 to 100mA. * Equivalent full-range temperature coefficient of 50ppm/°C typical for operation over full rated operating temperature range.
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WT431LT1
100mA.
50ppm/Â
OT-23
WT431
OT-23
03-Nov-06
WT431
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Untitled
Abstract: No abstract text available
Text: WT431LT1 PROGRAMMABLE PRECISION REFERENCE P b Lead Pb -Free 3 1 Features: * Programmagle output voltage to 36V. * Low dynamic output impedance 0.2Ω. * Sink current capability of 1 to 100mA. * Equivalent full-range temperature coefficient of 50ppm/°C typical for operation over full rated operating temperature range.
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WT431LT1
100mA.
50ppm/Â
OT-23
WT431
OT-23
03-Nov-06
WT431
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marking codes SOT23 SS
Abstract: marking 7T
Text: IIV C CMPT3904 NPN CMPT3906 PNP COMPLEMENTARY SILICON TRANSISTORS bvceo b v ebo VCE SAT VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE r a l The C E NTRAL S E M IC O N D U C TO R CM P T3904, CM P T3906 types are co m p le m e n ta ry s ilico n tra n s is to rs
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CMPT3904
CMPT3906
T3904,
T3906
OT-23
100MHz
marking codes SOT23 SS
marking 7T
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s 8550 d
Abstract: s8550LT1 8550 sot-23 pnp SS8550LT1 SS8550
Text: MC C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ ^ 1.BASE 2.EMITTER 3.COLLECTOR S S 8550LT 1 TR A N S IS TO R PNP 7T oi FEATURES '¿ r Power dissipation PCM: 0.625 W CTamb=25T ) Collector current ICM: -1.5 A Collector-base voltage V(BR)CBo:-40V
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OT-23
8550LT
SS8550LT1
s 8550 d
s8550LT1
8550 sot-23 pnp
SS8550LT1
SS8550
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Untitled
Abstract: No abstract text available
Text: KSC2734 NPN EPITAXIAL SILICON TRANSISTOR MIXER, OSC. FOR UHF TV TUNER SOT-23 High fT: 3.5GHz TYP ABSOLUTE MAXIMUM RATINGS (Ta= 25°C ) Characteristic Collector-Base Voltage Collector-Emltter Voltage Emitter-Base Voltage Collector Current (DC) Collector Dissipation
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KSC2734
OT-23
D0247Ã
DD24765
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AOE SOT-23
Abstract: No abstract text available
Text: Central CMPT4401 NPN CMPT4403 PNP Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMPT4401, CM PT4403 types are com plem entary silicon tra n sisto rs manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CMPT4401
CMPT4403
CMPT4401,
PT4403
OT-23
CMPT44Q3
CMPT44Q1
AOE SOT-23
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CMXT2222A
Abstract: NPN transistor marking NY
Text: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:
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CMXT2222A
OT-26
CMXT2222A
150mA,
OT-26
NPN transistor marking NY
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marking 6a2 smd
Abstract: No abstract text available
Text: BSS 123 In fin e o n technologies SIPMOS Small-Signal T ransistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type l'os fc BDS(on) Package Marking BSS 123 100 V 0.17 A 6Í2 SOT-23 SAs Type BSS 123 BSS 123
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OT-23
Q62702-S512
Q67000-S245
E6327
E6433
S35bG5
Q133777
SQT-89
B535bQ5
D13377Ã
marking 6a2 smd
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E200765
Abstract: style 20276 hdmi. cable HDMI cable CONNECTOR HIGH SPEED HDMI Connector HDMI hdmi 20276 STYLE 20276 hdmi
Text: 171 L ± 3% y / 19 CN1 MATERIAL LIST: 1 NO. PARTS NAME SPECIFICATION DESCRIPTIO N UL20276 30AWC* 1P+AL+D+MYLA *4+30AWG* 1P+30AWG*5C CABLE <2> HOMI CONNECTOR ÏÏ w ~ OUT CN2 CN1 RED 1 0 7T W— 12.-M _ WHITE 2 ^ 1 1 ii D R A IN D R A IN ^ 2 +AL+D+B(AL 60%) 0 0 :6 .0 ± 0 .2 m m COLOR:BLACK
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UL20276
E200765
19-SHELb-
2000i50nnn
style 20276
hdmi. cable
HDMI cable CONNECTOR
HIGH SPEED HDMI
Connector HDMI
hdmi 20276
STYLE 20276 hdmi
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marking 7T
Abstract: PF0224US6
Text: SEM ICO NDUCTO R PF0224US6 TECHNICAL DATA EMI Filtering TVS APPLICATION EMI Filter and line termination for USB upstream ports on. • USB Hubs • PC peripherals DIM A Al B Bl C D G H T FEATURES • EMI/RFI filtering. • ESD Protection to IEC 61000-4-2 Level 4.
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PF0224US6
marking 7T
PF0224US6
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Untitled
Abstract: No abstract text available
Text: S C S -IH O M S O N I0 J I« W B e S Í t p s Ü ocÍ STPS240CE SCHOTTKY RECTIFIER PRELIMINARY DATA . • ■ ■ ■ ■ VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD VOLTAGE DROP LOW THERMAL RESISTANCE EXTREMELY FAST SWITCHING SURFACE MOUNTED DEVICE
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STPS240CE
STPS220CE/STPS230CE/STPS240CE
00L0371
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marking r2k
Abstract: marking r1c GAJ SOT23 R1P SOT-223
Text: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.
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OT-23)
SSTH30
MMST1130
SC-59/Japanese
BCX70K
BCX71G
BCX71H
BCX71J
BFS17
marking r2k
marking r1c
GAJ SOT23
R1P SOT-223
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pt2222a
Abstract: MARKING code oJ sot23 PT2222
Text: TM C C M PT2222A e n t r a l Sem i c o n d u c t o r C o r p . NPN SILICON TRANSISTOR DESCRIPTION: The C ENTRAL S E M IC O N D U C TO R CMPT2222A type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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PT2222A
CMPT2222A
OT-23
pt2222a
MARKING code oJ sot23
PT2222
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Untitled
Abstract: No abstract text available
Text: Central CM PT4401 NPN C M PT4403 PN P Semiconductor Corp. COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The C E N T R A L S EM IC O N D U C T O R C M P T4401, CM PT4403 types are com plem entary silicon tran sisto rs manufactured by the epitaxial planar process,
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PT4401
PT4403
T4401,
OT-23
CMPT4401
CMPT4403
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON * 7 # . l« e iI Í L I « M D g t BAT 17, D S SMALL SIGNAL SCHOTTKY DIODES DESCRIPTION BAT 17 is a metal silioon junction diode featuring low turn-on voltage, low capacitance and ultrafast switching. Single or double series connected di odes are available. Two double diodes can be
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BAT17
7TBTE37
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Untitled
Abstract: No abstract text available
Text: SILICON HOT-CARRIER DIODE SCHOTTKY BARRIER DIODE . designed primarily for UHF mixer applications but suitable also for use in detector and ultra-fast switching circuits. Supplied in an inexpensive plas tic package for low-cost, high-volume consum er requirements. A lso avail
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MBD101*
MMBD101LT1*
O-226AC)
OT-23
O-236AB)
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j 6910
Abstract: transistor j 6910
Text: S IE M E N S PNP Silicon AF Transistor • • • • • BCP 69 For general AF application High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCP 68 NPN Type Marking Ordering Code (tape and reel) Pin Coni igura tion
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Q62702-C2130
Q62702-C2131
Q62702-C2132
Q62702-C2133
OT-223
EHP002M
fiS35fe05
j 6910
transistor j 6910
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Untitled
Abstract: No abstract text available
Text: C A L IF O R N IA MICRO DEVICES CMC71 01A ► ► ► ► ► CM C710 1A Low Power Operational Amplifier, RRIO, SOT23-5 Features A pplications Tiny SOT23-5 package Guaranteed specs at 2.7V, 3V and 5V Low supply current typically 300/j A Rail-to-Rail input and output RRIO
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CMC71
OT23-5
OT23-5
300/j
CMC7101A
CMC7101A
com/prod/data/package/sot-23
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smd code HF transistor
Abstract: transistor SMD MARKING CODE HF marking code CIE SMD Transistor transistor smd marking hf SMD HF transistor smd code marking rf ft sot23 SMD Transistor 7e K TRANSISTOR SMD MARKING CODE 596 m 147 smd transistor SMD TRANSISTOR MARKING 76
Text: • hbS3131 0DE47Qfl 14fl ■ N AMER P H I L I P S / D I S C R E T E APX BF824 fc.7E D J V_ H.F. SILICON PLANAR EPITAXIAL T RA N SIST O R P-N-P transistor in a plastic SO T-23 envelope especially intended for r.f. stages in f.m. front-ends in common base configuration for S M D applications.
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hbS3131
QDE47QS
BF824
OT-23
7z72158
DDEM713
BF824
7z72157
7z72161
smd code HF transistor
transistor SMD MARKING CODE HF
marking code CIE SMD Transistor
transistor smd marking hf
SMD HF transistor
smd code marking rf ft sot23
SMD Transistor 7e
K TRANSISTOR SMD MARKING CODE 596
m 147 smd transistor
SMD TRANSISTOR MARKING 76
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Untitled
Abstract: No abstract text available
Text: International [iorIRectifier PD - 2.480A 20CJQ100 2 Amp SCHOTTKY RECTIFIER Major Ratings and Characteristics C h a ra c te ris tic s 20C JQ 100 U n its 2.0 A 100 V 380 A 0.67 V -5 5 to 175 °C I f a v > R ectangular w aveform V rrm Ifsm @ Vf tp = 5ps sine
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20CJQ100
20CJQ100
40HFL40S02
554S2
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3SK240
Abstract: No abstract text available
Text: TOSHIBA 3SK240 TOSHIBA FIELD EFFECT TRANSISTOR GaAs N-CHANNEL DUAL GATE MES TYPE 3SK240 Unit in mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS + 0.2 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Gatel-Drain Voltage Gate2-Drain Voltage Gatel-Souree Voltage
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3SK240
3SK240
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QQ23b34 4tl N AflER PHILIPS/DISCRETE b?E D Philips Semiconductors Data sheet status Product specification T APX BF998 date of issue April 1991 Silicon n-channel dual gate MOS-FET FEATURES QUICK REFERENCE DATA • Short channel transistor with high
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bbS3T31
QQ23b34
BF998
OT143
LtiS3T31
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