diode ZENER 927
Abstract: diode 913b 1PMT5918B diode MARKING CODE 917 954 zener 1N5913B 1N5956B 1PMT5913B 1PMT5914B 1PMT5956B
Text: 1PMT5913Be3 thru 1PMT5956Be3 POWERMITETM 3.0 WATT Zener Diodes SCOTTSDALE DIVISION APPEARANCE DO-216 WWW . Microsemi .C OM DESCRIPTION This surface mountable 3.0 W Zener diode series in the JEDEC DO-216 package is similar in electrical features to the JEDEC registered 1N5913B
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1PMT5913Be3
1PMT5956Be3
DO-216
1N5913B
1N5956B
1PMT5913B
1PMT5956B
diode ZENER 927
diode 913b
1PMT5918B
diode MARKING CODE 917
954 zener
1N5913B
1PMT5914B
1PMT5956B
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ZV950
Abstract: ZV952V2TA
Text: 950 series SILICON LOW VOLTAGE HYPERABRUPT VARACTOR DIODES ZV950, ZV952, ZV953, ZMDC953 Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics, low voltage operation and high Q. Low reverse current ensures very low phase
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ZV950,
ZV952,
ZV953,
ZMDC953
200pA)
Wi222
ZV950
ZV952V2TA
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1PMT5918B
Abstract: diode ZENER 927 1PMT5913B 1PMT5914B 1PMT5915B 1PMT5916B 1PMT5917B 1PMT5919B 1PMT5956B MSC0995
Text: POWERMITE 8700 E. Thomas Road Scottsdale, AZ 85251 Tel: 480 941-6300 Fax: (480) 947-1503 3.0 WATT Zener Diodes 1PMT5913B thru 1PMT5956B DESCRIPTION ® In Microsemi's Powermite surface mount package, these zener diodes provide power-handling capabilities (3.0 WATTS) found in larger packages.
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1PMT5913B
1PMT5956B
DO-216
MSC0995
1PMT5918B
diode ZENER 927
1PMT5913B
1PMT5914B
1PMT5915B
1PMT5916B
1PMT5917B
1PMT5919B
1PMT5956B
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Untitled
Abstract: No abstract text available
Text: NVA4153N, NVE4153N Small Signal MOSFET 20 V, 952 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 Features • • • • • Low RDS on Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate AEC−Q101 Qualified and PPAP Capable
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NVA4153N,
NVE4153N
NTA4153N/D
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SMD Transistors w04
Abstract: smd transistor w18 w2f smd transistor w18 smd transistor smd transistor w04 SMD Transistor W03 TRANSISTOR w2f sot23 transistor SMD w04 SMD W2f transistor smd transistor marking e5
Text: Vishay Telefunken Marking on Packages1 view from top Cathodering unwind TO50 3 Pin and TO50 (4 Pin) SOD80 – QuadroMELF Label with information of TYPE on reel and package view from top view from top Cathodering unwind Cathodering unwind SOD80 MiniMELF Label with information of TYPE on reel and package
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OT143
BFS17W
BFS17AW
S858TA3
TSDF1205W
S503TRW
TSDF1220W
S504TRW
TSDF1250W
S505TRW
SMD Transistors w04
smd transistor w18
w2f smd transistor
w18 smd transistor
smd transistor w04
SMD Transistor W03
TRANSISTOR w2f sot23
transistor SMD w04
SMD W2f transistor
smd transistor marking e5
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Untitled
Abstract: No abstract text available
Text: LED HIGH POWER M13 Product Series LED HIGH POWER M13 CoB Product Series Data Sheet Created Date: 01 / 23 / 2014 Revision: 3.0, 05 / 08 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M13 Product Series 1. Description
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BNC-OD-C131/A4
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Lm 304 PN
Abstract: No abstract text available
Text: LED HIGH POWER M13 Product Series LED HIGH POWER M13 CoB Product Series Data Sheet Created Date: 01 / 23 / 2014 Revision: 2.4, 06 / 03 / 2014 1 BNC-OD-C131/A4 Created Date : 05/26/2007 Revison : 1.01, 05/26/2008 LED HIGH POWER M13 Product Series 1. Description
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BNC-OD-C131/A4
Lm 304 PN
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AO4701
Abstract: aos Lot Code Week
Text: July 2001 AO4701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4701 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the
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AO4701
AO4701
aos Lot Code Week
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SSG4801
Abstract: MosFET 4801ss
Text: SSG4801 -5 A, -30 V, RDS ON 50 m Dual-P Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8 DESCRIPTION The SSG4801 uses advanced trench technology to provide excellent on-resistance, low gate charge and
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SSG4801
SSG4801
4801SS
10sec.
19-Jan-2011
MosFET
4801ss
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stk0460
Abstract: STK0460F stk046 KSD-T0O005-004 stk04 16NC 1/equivalent to stk0460
Text: STK0460F Semiconductor Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATIONS Features • • • • PIN Connection High Voltage: BVDSS=600V Min. Low Crss : Crss=7.5pF(Typ.) Low gate charge : Qg=16nC(Typ.) Low RDS(on) :RDS(on)=2.5Ω(Max.) D G Ordering Information
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STK0460F
STK0460F
STK0460
O-220F-3L
KSD-T0O005-004
stk046
KSD-T0O005-004
stk04
16NC
1/equivalent to stk0460
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S952T
Abstract: S952TR
Text: S952T/S952TR MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC – MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications RFC C block Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.
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S952T/S952TR
S952T
D-74025
27-May-97
S952TR
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S952T
Abstract: S952TR S952TRW
Text: S952T/S952TR/S952TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and
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S952T/S952TR/S952TRW
S952T
D-74025
20-Jan-99
S952TR
S952TRW
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Untitled
Abstract: No abstract text available
Text: S952T/S952TR/S952TRW Vishay Telefunken MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and
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S952T/S952TR/S952TRW
S952T
D-74025
29-Jan-01
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Untitled
Abstract: No abstract text available
Text: S952T/S952TR/S952TRW Vishay Semiconductors MOSMIC for TV–Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and
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S952T/S952TR/S952TRW
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: BUK952R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK952R8-60E
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Untitled
Abstract: No abstract text available
Text: BUK9E2R8-60E N-channel TrenchMOS logic level FET 11 September 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high
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BUK9E2R8-60E
OT226
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Untitled
Abstract: No abstract text available
Text: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement Low Gate Charge Fast Switching BVDSS D2 -30V RDS ON D2 D1 D1 53m ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the
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AP4953GM
4953GM
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Untitled
Abstract: No abstract text available
Text: MA2404C1000000 N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2404C1 is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2404C1000000
MA2404C1
OT363
SC-70-6L
D032610
OT-363
3000pcs
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4953gm
Abstract: AP4953GM
Text: AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D2 ▼ Low Gate Charge ▼ Fast Switching D2 D1 D1 BVDSS -30V RDS ON 53mΩ ID -5A G2 S2 SO-8 S1 G1 Description D2 D1 Advanced Power MOSFETs from APEC provide the
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AP4953GM
4953GM
4953gm
AP4953GM
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Untitled
Abstract: No abstract text available
Text: MA2504W10000000 Dual N-Ch 20V Fast Switching MOSFETs General Description Product Summery The MA2504W is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the small power switching and load
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MA2504W10000000
MA2504W
D020210
3000pcs
6000pcs
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zener 416
Abstract: 934b MOTOROLA 929B PLASTIC SURFACE MOUNT ZENER DIODES marking 918b ca 944B 953B b946 932 b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts
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03A-03
zener 416
934b
MOTOROLA 929B
PLASTIC SURFACE MOUNT ZENER DIODES marking 918b
ca 944B
953B
b946
932 b
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PLASTIC SURFACE MOUNT ZENER DIODES marking 918b
Abstract: MOTOROLA 929B TVS marking LZ ON b941 marking zk TVS 923b 930 920B Marking 913b 924b
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1SMB5913BT3 through 1SMB5956BT3 3 Watt Plastic Surface Mount Silicon Zener Diodes This complete new line of 3 Watt Zener Diodes offers the following advantages. Specification Features: • A Complete Voltage Range — 3.3 to 200 Volts
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03A-03
PLASTIC SURFACE MOUNT ZENER DIODES marking 918b
MOTOROLA 929B
TVS marking LZ ON
b941
marking zk TVS
923b
930 920B
Marking 913b
924b
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S952T
Abstract: S952TR Telefunken Transistors
Text: Tem ic S952T/S952TR S e m i c o n d u c t o r s MOSMIC for TV-Tuner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.
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s952t/s952tr
S952T
27-May-97
S952TR
Telefunken Transistors
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Untitled
Abstract: No abstract text available
Text: Tem ic S952T/S952TR Semiconductors MOSMIC for TV-Tùner Prestage with 9 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit £ Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise gain controlled input stages in UHF- and VHFtuner with 9 V supply voltage.
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S952T/S952TR
S952T
S952TR
D-74025
27-May-97
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