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    MARKING AJ TOSHIBA Search Results

    MARKING AJ TOSHIBA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation

    MARKING AJ TOSHIBA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3164165

    Abstract: TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805
    Text: HYB 3164 5 400/5 AJ/AT -40/-50/-60 64M x 4 - Bit Dynamic RAM HYB 3164(5)800/5 AJ/AT -40/-50/-60 8M x 8 - Bit Dynamic RAM HYB 3164(5,6)160/5 AT -40/-50/-60 4M x 16 -Bit Dynamic RAM INFORMATION NOTE 64M - Bit DYNAMIC MEMORIES (Second Generation) General Information


    Original     		PDF Info64M3 64M-Bit HYB3164 400/800/160AJ/AT 405/805/165AJ/AT 400mil SOJ-24 3164165 TSOP-II-32 GPJ05855 hyb3165165 cmos dram 8m x 16 TSOPII-50 3165165AT 64M-DRAM marking AJ 7 3164805

    TA79L12F

    Abstract: TA79L05 TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L15F TA79L18F TA79L20F
    Text: TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F Three-Terminal Negative Voltage Regulators −5 V, −6 V, −8 V, −9 V, −10 V, −12 V, −15 V, −18 V, −20 V, −24 V


    Original     		PDF TA79L05 TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L12F TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L15F TA79L18F TA79L20F

    Untitled

    Abstract: No abstract text available
    Text: TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F Three-Terminal Negative Voltage Regulators −5 V, −6 V, −8 V, −9 V, −10 V, −12 V, −15 V, −18 V, −20 V, −24 V


    Original     		PDF TA79L05 TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F,

    TA79L12F

    Abstract: TA79L05 TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L15F TA79L18F TA79L20F
    Text: TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F Three-Terminal Negative Voltage Regulators −5 V, −6 V, −8 V, −9 V, −10 V, −12 V, −15 V, −18 V, −20 V, −24 V


    Original     		PDF TA79L05 TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L12F TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L15F TA79L18F TA79L20F

    TA79L05

    Abstract: TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L12F TA79L15F TA79L18F TA79L20F
    Text: TA79L05,06,08,09,10,12,15,18,20,24F TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L24F Three-Terminal Negative Voltage Regulators −5 V, −6 V, −8 V, −9 V, −10 V, −12 V, −15 V, −18 V, −20 V, −24 V


    Original     		PDF TA79L05 TA79L05F, TA79L06F, TA79L08F, TA79L09F, TA79L10F, TA79L12F, TA79L15F, TA79L18F, TA79L20F, TA79L05F TA79L06F TA79L08F TA79L09F TA79L10F TA79L12F TA79L15F TA79L18F TA79L20F

    2-4F1C

    Abstract: 2SC330 OQ10
    Text: TOSHIBA 9 2SC3301 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AM PLIFIER APPLICATIONS Features: Unii in mm • NF = 1.5 dB, • N F*1 .7 dB, S21e 2 = 16.5 dB f = 500 MHz S21e 2 - 11 dB (f = 1000 MHz) Maximum Ratings (Ta = 25°C)


    OCR Scan     		PDF 2SC330Ã 55-m25 2-4F1C 2SC330 OQ10

    ICA10

    Abstract: YTS2907A 150fps
    Text: TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS YTS2907A FOR HIGH SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND +Q5 Z5-(X3 COMPLEMENTARY CIRCUITRY FEATURES: . High DC Current Gain Specified : -0.1— -500mA . High Transition Frequency


    OCR Scan     		PDF YTS2907A -500mA fT-200MHz YTS2222A -500mA, -50mA Ta-25 -15mA 500mA, -50mA ICA10 YTS2907A 150fps

    transistor marking c3n

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5262 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5262 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure : N F = 1.7dB f=2G H z H igh Gain : Gain = lld B (f= 2 G H z ) MAXIMUM RATINGS (Ta = 25°C) SYM BOL CHARACTERISTIC


    OCR Scan     		PDF 2SC5262 transistor marking c3n

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE 5JLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER • 5 1 I 7 d SILICON EPITAXIAL TYPE 7 A Unit in mm SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 53.2 ± 0.2 ; 0.3 M A X . Repetitive Peak Reverse Voltage V r r m = 600V


    OCR Scan     		PDF 5JLZ47A 5JLZ47A 5JLZ47

    MT3S06S

    Abstract: No abstract text available
    Text: TO SH IBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.6 dB V C E = 3 V, In = 3 mA, f = 2 GHz TTicrh (T-ain IS o i J 2 = 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1


    OCR Scan     		PDF MT3S06S MT3S06S

    10GWJ2CZ47C

    Abstract: No abstract text available
    Text: TO SHIBA 10GWJ2CZ47C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 1 n n w \J C 7 d i r Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION • • • .10.3MAX. , 0 3 2 + 0.2 Repetitive Peak Reverse Voltage : V r r ;m = 40V


    OCR Scan     		PDF 10GWJ2CZ47C 500ns, 12-10C1A 961001EAA2' 10GWJ2CZ47C

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2782 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE L^ tt-M O S V 2SK2782 HIGH SPEED. HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : RdS ( O N ) -Û039O (Typ.)


    OCR Scan     		PDF 2SK2782 IDR--20A,

    2SA1298

    Abstract: 2SC3265
    Text: TO SH IBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS 2 .5 0.5 0.3 + - + High DC Current Gain : hjpg (1) —100~320 Low Saturation Voltage : Vqe (sa^) = 0.4 V (Max.)


    OCR Scan     		PDF 2SC3265 2SA1298 2SA1298 2SC3265

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 30FWJ2C48M,U30FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2C48M, U30FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage


    OCR Scan     		PDF 30FWJ2C48M U30FWJ2C48M 30FWJ2C48M, 30FWJ2C48M U30FW J2C48M 12-10D1A 12-10D2A

    2SK210

    Abstract: RS1N
    Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210 RS1N

    2SK210

    Abstract: No abstract text available
    Text: 2SK210 TO SH IBA TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL JUNCTION TYPE 2SK210 Unit in mm FM TUNER APPLICATIONS VHF BAND AMPLIFIER APPLICATIONS • • • + 0.5 2 .5 -0.3 + 0.25 1.5-0.15 High Power Gain : Gpg = 24dB Typ. (f = 100MHz) Low Noise Figure


    OCR Scan     		PDF 2SK210 100MHz) SC-59 2SK210

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A SF8G48/SF8J48/USF8G48/USF8J48 TOSHIBA THYRISTOR SILICON PLANAR TYPE SF8G48, SF8J48, USF8G48, USF8J48 MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-St ate Voltage Repetitive Peak Reverse Voltage Average On-State Current Gate Trigger Current


    OCR Scan     		PDF SF8G48/SF8J48/USF8G48/USF8J48 SF8G48, SF8J48, USF8G48, USF8J48 SF8G48-SF8J48 USF8G48-USF8J48 13-10J2B F8G48

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA 30FWJ2C48M,U30FWJ2C48M TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 30FWJ2C48M, U30FWJ2C48M LOW FORWARD VOLTAGE SCHOTTKY BARRIER DIODE SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • Peak Forward Voltage


    OCR Scan     		PDF 30FWJ2C48M U30FWJ2C48M 30FWJ2C48M, 30FWJ2C48M U30FW J2C48M 12-10D1A 12-10D2A

    MT3S06T

    Abstract: No abstract text available
    Text: TO SH IBA MT3S06T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0.05 • 0.8 ± 0.05 Low Noise Figure : NF = 1.6 dB Vf!F, = 3 V, In = 3 mA, f = 2 GHz IS o i J2 = Q K r\T\ TTicrh (T -ain


    OCR Scan     		PDF MT3S06T MT3S06T

    Untitled

    Abstract: No abstract text available
    Text: TO SH IB A 2SK2602 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-M OSV] 2SK2602 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS SWITCHING REGULATOR APPLICATIONS • • • • Low Drain-Sorce ON Resistance : RdS ( O N = 0-9^ (Typ.)


    OCR Scan     		PDF 2SK2602

    05Z5.1

    Abstract: irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y
    Text: b7 TOSHIBA { DI SCRET E/ OP TO } 9097250 T O SH I BA dF D IS C R E TE/OPTO > 05Z5.1 -05Z24 I tchtesd 67C 09277 .* oocna? a 1 ~ 0 T ' / / ‘// • Silicon Planar Type Zener Diode Unit in mm CONSTANT VOLTAGE REGULATION APPLICATIONS. REFERENCE VOLTAGE APPLICATIONS.


    OCR Scan     		PDF -05Z24 500mW DO-35 BO-40 05Z5.1 irf 1820 Irf 1540 N 05Z5.6 05Z12Y 05Z6.2 05Z12 05Z16 05Z6.8 05Z5.6Y

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC4322 Transistor U n it in m m i-0 5 2 5 -0 3 -0.25 1.5 - 0 . 1 5 , Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications - o o o Egi F e a tu re s • Low Noise Figure, High Gain + • NF = 1 ,8dB, IS21ei2 = 7.5dB f = 2GHz


    OCR Scan     		PDF 2SC4322 IS21ei2

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SK2385 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2- tt-M OSV 2SK2385 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 4V Gate Drive Low Drain-Source ON Resistance : Rj)g (ON) = 22mQ (Typ.)


    OCR Scan     		PDF 2SK2385 100/zA 20kfi) gK2385

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK207 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL DUAL GATE MOS TYPE 3<;K7fl7 TV TUNER, UHF RF AMPLIFIER APPLICATIONS. — +rnr Unit in mm 2.9 - Q 3 • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Cr^ = 0.015pF Typ.


    OCR Scan     		PDF 3SK207 015pF