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    MT3S06T Search Results

    MT3S06T Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S06T Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    MT3S06T Toshiba Scan PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic


    Original     		PDF MT6L57AFS MT3S06T MT3S06FS) MT3S04AT MT3S04AFS)

    014E

    Abstract: 200E 800E MT3S06T MT3S06AT
    Text: MT3S06T SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S06AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0


    Original     		PDF MT3S06T MT3S06AT 014E-02 260E-10 800E-13 346E-14 014E 200E 800E MT3S06AT

    MT3S06FS

    Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S11FS) MT3S06FS) MT3S11T MT3S06T MT3S06FS MT3S06T MT3S11FS MT3S11T MT6L68FS

    MT3S06T

    Abstract: No abstract text available
    Text: MT3S06T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S06T MT3S06T

    MT3S06T

    Abstract: No abstract text available
    Text: MT3S06T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06T ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz : |S21e|2 = 9.5dB


    Original     		PDF MT3S06T MT3S06T

    MT6L58AFS

    Abstract: MT3S03AFS MT3S03AT MT3S06FS MT3S06T
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05


    Original     		PDF MT6L58AFS MT3S03AFS) MT3S06FS) MT3S03AT MT3S06T MT6L58AFS MT3S03AFS MT3S03AT MT3S06FS MT3S06T

    Untitled

    Abstract: No abstract text available
    Text: MT3S06T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S06T

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S06T MT3S03AT MT3S06FS (MT3S03AFS) Corresponding three-pin products: TESM(fSM) mold products 6 2 5 3


    Original     		PDF MT6L58AFS MT3S06T MT3S06FS) MT3S03AT MT3S03AFS)

    MT3S04AS

    Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AS high dc current gain transistor
    Text: MT6L57AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L57AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.


    Original     		PDF MT6L57AS MT3S06S MT3S06T) MT3S04AS MT3S04AT) S21e2 MT3S04AS MT3S04AT MT3S06S MT3S06T MT6L57AS high dc current gain transistor

    MT3S03AS

    Abstract: MT3S03AT MT3S06S MT3S06T MT6L58AS
    Text: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.


    Original     		PDF MT6L58AS MT3S06S MT3S06T) MT3S03AS MT3S03AT) S21e2 MT3S03AS MT3S03AT MT3S06S MT3S06T MT6L58AS

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT3S06T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm


    Original     		PDF MT3S06T

    MT3S04AFS

    Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
    Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05


    Original     		PDF MT6L57AFS MT3S04AFS) MT3S06FS) MT3S04AT MT3S06T MT3S04AFS MT3S04AT MT3S06FS MT3S06T MT6L57AFS

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S06S

    Abstract: MT3S06T MT3S08T MT6L54E
    Text: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)


    Original     		PDF MT6L54E MT3S06S MT3S06T) MT3S08T MT3S06S MT3S06T MT3S08T MT6L54E

    MT3S04AS

    Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
    Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold


    Original     		PDF MT6L57AE MT3S06S MT3S04AS MT3S06T) MT3S04AT) MT3S04AS MT3S04AT MT3S06S MT3S06T MT6L57AE

    Untitled

    Abstract: No abstract text available
    Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold


    Original     		PDF MT6L57AE MT3S06S MT3S06T) MT3S04AS MT3S04AT)

    Untitled

    Abstract: No abstract text available
    Text: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6


    Original     		PDF MT6L58AS MT3S06S MT3S06T) MT3S03AS MT3S03AT)

    MT3S06T

    Abstract: No abstract text available
    Text: TO SH IBA MT3S06T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0.05 • 0.8 ± 0.05 Low Noise Figure : NF = 1.6 dB Vf!F, = 3 V, In = 3 mA, f = 2 GHz IS o i J2 = Q K r\T\ TTicrh (T -ain


    OCR Scan     		PDF MT3S06T MT3S06T

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MT3S06T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06T Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2i e|2 = 9.5 dB


    OCR Scan     		PDF MT3S06T

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MT3S06T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB


    OCR Scan     		PDF MT3S06T S21el2

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c


    OCR Scan     		PDF MT6L59E MT3S06S MT3S06T) MT3S07S MT3S07T)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES


    OCR Scan     		PDF MT6L58AE MT3S06S MT3S06T) MT3S03AS MT3S03AT)

    MT3S06S

    Abstract: MT3S06T MT6C06E
    Text: TO SH IBA MT6C06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C06E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 Three-pins (SSM/TESM) mold products are


    OCR Scan     		PDF MT6C06E MT3S06S MT3S06T) MT3S06S MT3S06T MT6C06E