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    MT3S11T Search Results

    MT3S11T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S11T Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO


    Original     		PDF MT6L11FS MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz


    Original     		PDF MT3S11T 0022g MT3S11T

    VHF-UHF Band Low Noise Amplifier

    Abstract: IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics : NF = 2.4 dB, |S21e|2 = 3.5 dB f = 2 GHz


    Original     		PDF MT3S11T 0022g VHF-UHF Band Low Noise Amplifier IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T

    MT3S06FS

    Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S11FS) MT3S06FS) MT3S11T MT3S06T MT3S06FS MT3S06T MT3S11FS MT3S11T MT6L68FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


    Original     		PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S11T ○ VHF~UHF 低雑音増幅用 単位: mm • OSC 用途に優れています。 • 雑音特性が優れています。 : NF = 2.4 dB⎪S21e⎪2 = 3.5 dB f = 2 GHz


    Original     		PDF MT3S11T dBS21e2 MT3S11T

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04


    Original     		PDF MT6L11FS MT3S11T MT3S11FS)

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz


    Original     		PDF MT3S11T 0022g MT3S11T

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol


    Original     		PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


    Original     		PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


    Original     		PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage


    Original     		PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S11FS

    Abstract: MT3S11T MT6L11FS
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.


    Original     		PDF MT6L11FS MT3S11T MT3S11FS) MT3S11FS MT3S11T MT6L11FS

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original     		PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509