EG 8010
Abstract: transistor 9018 NPN
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT3S04AT
EG 8010
transistor 9018 NPN
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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014E
Abstract: 200E 800E MT3S04AT 7880e13 5810E
Text: MT3S04AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S04AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0
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MT3S04AT
MT3S04AT
014E-02
260E-10
800E-13
346E-14
014E
200E
800E
7880e13
5810E
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4317 0215 transistor
Abstract: MT3S04AT IB 6415
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)
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MT3S04AT
4317 0215 transistor
MT3S04AT
IB 6415
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NPN Silicon Epitaxial Planar Transistor 9018
Abstract: MT3S04AT
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT3S04AT
NPN Silicon Epitaxial Planar Transistor 9018
MT3S04AT
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IC 14049
Abstract: MT3S04AT ic 8853 IB 6415 IC 7306
Text: MT3S04AT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AT ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz 絶対最大定格 (Ta = 25°C)
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MT3S04AT
IC 14049
MT3S04AT
ic 8853
IB 6415
IC 7306
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MT3S04AFS
Abstract: MT3S04AT MT3S06FS MT3S06T MT6L57AFS
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S06T MT3S04AT MT3S06FS (MT3S04AFS) Corresponding three-pin products: TESM(fSM) mold products 2 5 3 4 0.1±0.05
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MT6L57AFS
MT3S04AFS)
MT3S06FS)
MT3S04AT
MT3S06T
MT3S04AFS
MT3S04AT
MT3S06FS
MT3S06T
MT6L57AFS
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MT3S04AS
Abstract: MT3S04AT MT6C04AE
Text: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6C04AE
MT3S04AS
MT3S04AT)
MT3S04AS
MT3S04AT
MT6C04AE
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MT3S04AS
Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AE
MT3S06S
MT3S04AS
MT3S06T)
MT3S04AT)
MT3S04AS
MT3S04AT
MT3S06S
MT3S06T
MT6L57AE
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Untitled
Abstract: No abstract text available
Text: MT6L04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L04AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6L04AE
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AE
MT3S06S
MT3S06T)
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6C04AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C04AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
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MT6C04AE
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold
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MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 Lead Pb -free. 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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2493 transistor
Abstract: marking 9721 IC 7109
Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll
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MT3S04AT
IS21I2
2493 transistor
marking 9721
IC 7109
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toshiba 5564
Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)
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MT3S04AT
CHARAC83
toshiba 5564
6922 EH
4317 0215 transistor
MT3S04AT
NPN Silicon Epitaxial Planar Transistor 9018
9018 transistor
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Untitled
Abstract: No abstract text available
Text: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L50AT
2SC5256
MT3S04AS
5256FT)
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L52AE
MT3S03S
MT3S04AS
MT3S03T)
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: M T6L04AE TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-
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T6L04AE
MT6L04AE
MT3S04AS
MT3S04AT)
-55-12A>
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
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MT6L52AE
MT3S03S
MT3S04AS
MT3S03T)
MT3S04AT)
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2SC5256
Abstract: MT3S04AS MT3S04AT MT6L50AT
Text: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L50AT
2SC5256
5256FT)
MT3S04AS
MT3S04AT)
2SC5256
MT3S04AS
MT3S04AT
MT6L50AT
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MT3S03AS
Abstract: MT3S03AT MT3S04AS MT3S04AT MT6L52AE
Text: TOSHIBA MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 V in in in OO o 2 o o - F MOUNTED DEVICES
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MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
MT3S03AS
MT3S03AT
MT3S04AS
MT3S04AT
MT6L52AE
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MT3S04AS
Abstract: MT3S04AT MT6L04AT
Text: TO SH IBA MT6L04AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
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MT6L04AT
MT3S04AS
MT3S04AT)
MT3S04AS
MT3S04AT
MT6L04AT
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MT3S04AS
Abstract: MT3S04AT MT6L04AE
Text: TO SH IBA MT6L04AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L04AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)
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MT6L04AE
MT3S04AS
MT3S04AT)
MT3S04AS
MT3S04AT
MT6L04AE
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