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    2SC5256 Search Results

    2SC5256 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2SC5256 Unknown NPN Transistor Scan PDF
    2SC5256 Unknown Japanese Transistor Cross References (2S) Scan PDF
    2SC5256 Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5256 Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATON) Scan PDF
    2SC5256F Toshiba Transistor Silicon NPN Epitaxial Planar Type Scan PDF
    2SC5256F-O Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5256F-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5256FT Unknown NPN Transistor Scan PDF
    2SC5256FT Toshiba NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) Scan PDF
    2SC5256FT Toshiba TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF
    2SC5256-R Toshiba TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Scan PDF

    2SC5256 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VHF-UHF Band Low Noise Amplifier

    Abstract: 2SC5256F
    Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2lel2= 9.5dB (f=2GHz) 1.6 ± 0.1 0.85 ± 0.1 MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5256F VHF-UHF Band Low Noise Amplifier 2SC5256F

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE R9 R f i F T Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain NF = 1.5dB f=2GHz ISoi J 2= 9.5dB (f = 2GHz) 1.2 ± 0.05 u .o = u.uo MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5256FT

    transistor H1A

    Abstract: 2SC5256
    Text: TO SH IBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • Unit in mm 1.6 ± 0.2 : NF = 1.5dB f = 2GHz Low Noise Figure ,0.8 ±0.1, • High Gain : Gain = 8.5dB (f = 2GHz) in o O p tr>


    OCR Scan     		PDF 2SC5256 0024g transistor H1A 2SC5256

    2SC5256FT

    Abstract: No abstract text available
    Text: TO SH IBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain 1.2 ±0 .0 5 : NF = 1.5dB f = 2GHz : |S2iel2—9.5dB (f = 2GHz) 0.8 ± 0.05


    OCR Scan     		PDF 2SC5256FT 0022g 2SC5256FT

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL v CBO


    OCR Scan     		PDF 2SC5256

    2SC5256FT

    Abstract: VHF-UHF Band Low Noise Amplifier
    Text: TOSHIBA 2SC5256FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256FT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High Gain : NF = 1.5dB f=2GHz : |S2l e|2= 9.5dB (f=2GHz) 1.2 ± 0.05 0.8 ± 0.05 M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC5256FT 2SC5256FT VHF-UHF Band Low Noise Amplifier

    transistor H1A

    Abstract: 2SC5256 marking H1A h1a transistor
    Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO


    OCR Scan     		PDF 2SC5256 transistor H1A 2SC5256 marking H1A h1a transistor

    transistor H1A

    Abstract: marking H1A 2SC5256 marking MK
    Text: TOSHIBA 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATION • • : NF = 1.5dB f = 2GHz : Gain = 8.5dB (f = 2GHz) Low Noise Figure High Gain MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO


    OCR Scan     		PDF 2SC5256 transistor H1A marking H1A 2SC5256 marking MK

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SC5256 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256 VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • t Low Noise Figure High Gain : NF = 1.5dB f=2GHz : Gain = 8.5dB (f = 2GHz) MAXIMUM RATINGS (Ta = 25°C) SYMBOL VCBO VCEO Ve BO


    OCR Scan     		PDF 2SC5256

    transistor marking MK

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE 2SC5256F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5256F VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATION • • Low Noise Figure High. Gain : NF = 1.5dB f=2GHz : |S21el2= 9-5dB (f=2GHz) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC


    OCR Scan     		PDF 2SC5256F S21el2= 20mAlease transistor marking MK

    Untitled

    Abstract: No abstract text available
    Text: MT6L50AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF MT6L50AT 2SC5256 MT3S04AS 5256FT) MT3S04AT)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN9C04FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N9C04FT Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 MOUNTED DEVICES


    OCR Scan     		PDF HN9C04FT N9C04FT 2SC5256 2SC5091 CB--10V, --20mA, 1000MHz 2000MHz

    Untitled

    Abstract: No abstract text available
    Text: HN9C15FT TO SHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H N Q T 1 R FT • ■ u m ■ MF ■ ■ Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6


    OCR Scan     		PDF HN9C15FT 2SC5091 2SC5256 1000MHz 2000MHz c2000MHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE HN9C02FT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE H M Q f 17 F T • ■ ■ V V m m Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini (6pins package : TU6


    OCR Scan     		PDF HN9C02FT 2SC5256 2SC5086 2000MHz 1000M 500MHz --20mA,

    2SC5256

    Abstract: MT3S03AS MT3S03AT MT6L51AE
    Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES


    OCR Scan     		PDF MT6L51AE 2SC5256 5256FT) MT3S03AS MT3S03AT) 2SC5256 MT3S03AS MT3S03AT MT6L51AE

    MT6L51AE

    Abstract: 2SC5256 MT3S03AS MT3S03AT
    Text: TO SH IBA MT6L51AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L 51 AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö in Oin ino 2V -O 11


    OCR Scan     		PDF MT6L51AE 2SC5256 5256FT) MT3S03AS MT3S03AT) 2SC5256 MT3S03AS MT3S03AT

    Untitled

    Abstract: No abstract text available
    Text: MT6L51AT TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF MT6L51AT 2SC5256 5256FT) MT3S03AS MT3S03AT)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MT6L50AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES


    OCR Scan     		PDF MT6L50AE 2SC5256 MT3S04AS 5256FT) MT3S04AT)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE HN9C15FT TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN9C15FT Unit in mm V H F -U H F B AN D LO W NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6pins package : TU6 M O U N T E D DEVICES


    OCR Scan     		PDF HN9C15FT 2SC5091 2SC5256 2000MHz 1000MHz --20mA,

    2SC144

    Abstract: 2SD466 2sc5266
    Text: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *


    OCR Scan     		PDF T258-OMI FAX06 2SC144 2SD466 2sc5266

    2SC5256

    Abstract: MT3S03AS MT3S03AT MT6L51AT
    Text: TO SH IBA MT6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE M T 6 L 5 1 AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF MT6L51AT MT6L51 2SC5256 5256FT) MT3S03AS MT3S03AT) 2SC5256 MT3S03AS MT3S03AT

    2SC5256

    Abstract: MT3S04AS MT3S04AT MT6L50AE
    Text: TOSHIBA MT6L50AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L50AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö V -O 1 1 ir> IT) in O O o 2


    OCR Scan     		PDF MT6L50AE 2SC5256 5256FT) MT3S04AS MT3S04AT) 2SC5256 MT3S04AS MT3S04AT

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA M T6L51AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51AT Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES


    OCR Scan     		PDF T6L51AT MT6L51AT 2SC5256 MT3S03AS 5256FT) MT3S03AT)

    Untitled

    Abstract: No abstract text available
    Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES


    OCR Scan     		PDF MT6L51AE MT6L51 2SC5256 5256FT) MT3S03AS MT3S03AT)