AS5SS256K36
Abstract: AS5SS256K36A 876-3210
Text: SSRAM AS5SS256K36 & AS5SS256K36A Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM 100-pin TQFP (DQ) (2-chip enable version, “A” indicator) FEATURES ! ! ! ! ! ! ! ! ! ! ! OPTIONS MARKING DQ No. 1001
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AS5SS256K36
AS5SS256K36A
100-pin
AS5SS256K36
AS5SS256K36ADQ-8
AS5SS256K36A
876-3210
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lpddr2 256mb
Abstract: NT6DM8M32AC-T1 NT6DM16M16AD NT6DM8M32AC lpddr2 layout NT6DM8M32 Dual LPDDR2 lpddr2 256mb kgd lpddr2-s2
Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking VDD /VDDQ
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256Mb
NT6DM16M16AD
NT6DM8M32AC
-16Meg
16M16
lpddr2 256mb
NT6DM8M32AC-T1
NT6DM8M32AC
lpddr2 layout
NT6DM8M32
Dual LPDDR2
lpddr2 256mb kgd
lpddr2-s2
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NT6DM16M16AD-T1
Abstract: 64M32 HP 3458 NT6DM16M16AD-T1I
Text: 256Mb LPDDR SDRAM NT6DM16M16AD / NT6DM8M32AC Options Feature Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with data, to be used in capturing data at the receiver Marking VDD /VDDQ
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256Mb
NT6DM16M16AD
NT6DM8M32AC
-16Meg
16M16
NT6DM16M16AD-T1
64M32
HP 3458
NT6DM16M16AD-T1I
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NT6DM16M
Abstract: No abstract text available
Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with Marking VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver
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512Mb
NT6DM32M16AD
NT6DM16M32AC
-32Meg
32M16
-16Meg
16M32
NT6DM16M
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NT6DM32M16AD-T1
Abstract: NT6DM32M16AD NT6DM16M32AC-T1 NT6DM16M32AC NT6DM16M32AC-T3 216-ball NT6DM32M16AD-T3 256M16 lpddr2 256mb lpddr2 layout
Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with Marking VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver
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512Mb
NT6DM32M16AD
NT6DM16M32AC
-32Meg
-16Meg
-60-ball
-90-ball
NT6DM32M16AD-T1
NT6DM16M32AC-T1
NT6DM16M32AC
NT6DM16M32AC-T3
216-ball
NT6DM32M16AD-T3
256M16
lpddr2 256mb
lpddr2 layout
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LPDDR 8Gb
Abstract: lpddr2 256mb NT6DM32M16AD-T1 NT6DM32M16AD nanya lpddr2 spec
Text: 512Mb LPDDR SDRAM NT6DM32M16AD / NT6DM16M32AC Feature Options Double-data rate architecture; two data transfer per clock cycle Bidirectional, data strobe DQS is transmitted/received with Marking VDD /VDDQ -1.8V/1.8V M data, to be used in capturing data at the receiver
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512Mb
NT6DM32M16AD
NT6DM16M32AC
-32Meg
-16Meg
-60-ball
-90-ball
LPDDR 8Gb
lpddr2 256mb
NT6DM32M16AD-T1
nanya lpddr2 spec
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MT42L32M32D2
Abstract: micron lpddr2 LPDDR2 SDRAM LPDDR2 SDRAM micron MT42L32M32
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks
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512Mb
MT42L32M16D1,
MT42L32M32D2,
MT42L16M32D1
09005aef84d56533
MT42L32M32D2
micron lpddr2
LPDDR2 SDRAM
LPDDR2 SDRAM micron
MT42L32M32
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Untitled
Abstract: No abstract text available
Text: 512Mb: x16 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package – 121-ball FBGA 6.5mm x 8mm
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512Mb:
MT42L32M16D1
09005aef8467caf2
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MT41K256M16HA
Abstract: D9PZD MT41K256M16H MT41K256M16HA-107 5CK 055 MARKING CCK -SDRAM MT41K256M16 MT41K256M16HA-107G smd CCK 96-ball FBGA
Text: 4Gb: x16 gDDR3L SDRAM Graphics Addendum Features gDDR3L SDRAM Graphics Addendum MT41K256M16 – 32 Meg x 16 x 8 Banks Features Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. E • Timing – cycle time
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MT41K256M16
09005aef84b213dd
MT41K256M16HA
D9PZD
MT41K256M16H
MT41K256M16HA-107
5CK 055
MARKING CCK -SDRAM
MT41K256M16
MT41K256M16HA-107G
smd CCK
96-ball FBGA
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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Untitled
Abstract: No abstract text available
Text: Preliminary‡ 512Mb Automotive Mobile LPDDR2 SDRAM Features Automotive Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L32M32D2 Features Options Marking • VDD2: 1.2V • Configuration – 8 Meg x 16 x 4 banks – 2 x 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package
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512Mb
MT42L32M16D1,
MT42L32M32D2
121-ball
134-ball
09005aef84d56533
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MT41K128M16JT
Abstract: No abstract text available
Text: 2Gb: x16 gDDR3L SDRAM Graphics Addendum Features gDDR3L SDRAM Graphics Addendum MT41K128M16 – 16 Meg x 16 x 8 Banks Features Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (8mm x 14mm) Rev. K • Timing – cycle time
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MT41K128M16
96-ball
gDDR3L-1800)
09005aef84c55782
MT41K128M16JT
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MT41K256M16
Abstract: No abstract text available
Text: 4Gb: x16 gDDR3L SDRAM Graphics Addendum Features gDDR3L SDRAM Graphics Addendum MT41K256M16 – 32 Meg x 16 x 8 Banks Features Options Marking • Configuration – 256 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. E • Timing – cycle time
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MT41K256M16
96-ball
gDDR3-1800)
09005aef84b213dd
MT41K256M16
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MT41K128M16JT
Abstract: MT41K128m16j MT41K128M16JT-107 MT41K128M16 MT41K128M16JT-107G
Text: 2Gb: x16 gDDR3L SDRAM Graphics Addendum Features gDDR3L SDRAM Graphics Addendum MT41K128M16 – 16 Meg x 16 x 8 Banks Features Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (8mm x 14mm) Rev. K • Timing – cycle time
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MT41K128M16
09005aef84c55782
MT41K128M16JT
MT41K128m16j
MT41K128M16JT-107
MT41K128M16
MT41K128M16JT-107G
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AS5SS256K36
Abstract: 43251 876-3210
Text: SSRAM Austin Semiconductor, Inc. 256K x 36 SSRAM PIN ASSIGNMENT Top View Flow-Through, Synchronous Burst SRAM FEATURES z z z z z z z z z z z OPTIONS MARKING Timing 8.5ns/10ns/100MHz 10ns/15ns/66MHz z Packages 100-pin TQFP (2-chip enable) z Pinout 3-chip Enable
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100-pin
portableS5SS256K36
AS5SS256K36
-40oC
85oC1
-55oC
125oC
AS5SS256K36
43251
876-3210
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MT47H128M8CF-25
Abstract: 8 resistor array 10k smd 103
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H128M8
MT47H64M16
18-compatible)
8192-cycle
09005aef840eff89
MT47H128M8CF-25
8 resistor array 10k smd 103
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Untitled
Abstract: No abstract text available
Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H256M8
MT47H128M16
60-ball
84-ball
DDR2-800)
DDR2-667)
09005aef8441c566
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D9PRS
Abstract: MT41J128M16JT-125 MICRON gddr3 mt41j128m16ha MT41J128M16JT gddr3 GDDR3-1800 MT41J128M16HA-125 MT41J128M16HA-107G MT41J128M16JT-107G
Text: 2Gb: x16 gDDR3 SDRAM Graphics Addendum Features gDDR3 SDRAM Graphics Addendum MT41J128M16 – 16 Meg x 16 x 8 Banks Features Options Marking • Configuration – 128 Meg x 16 • FBGA package Pb-free – x16 – 96-ball (9mm x 14mm) Rev. D – 96-ball (8mm x 14mm) Rev. K
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MT41J128M16
64mBox
09005aef84255871
D9PRS
MT41J128M16JT-125
MICRON gddr3
mt41j128m16ha
MT41J128M16JT
gddr3
GDDR3-1800
MT41J128M16HA-125
MT41J128M16HA-107G
MT41J128M16JT-107G
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MT42L16M32
Abstract: MT42L16M32D1 MT42L16M32D MT42L32M16D1 MT42L32M16D PS 229 LPDDR2 PoP LPDDR2 DRAM LPDDR2-1066 Micron LPDDR2
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
MT42L16M32
MT42L16M32D
MT42L32M16D1
MT42L32M16D
PS 229
LPDDR2 PoP
LPDDR2 DRAM
LPDDR2-1066
Micron LPDDR2
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MT42L16M32D1
Abstract: 7600B Dynamic Memory Refresh Controller LPDDR2-1066 121ball
Text: 512Mb: x16, x32 Mobile LPDDR2 SDRAM S4 Features Mobile LPDDR2 SDRAM MT42L32M16D1, MT42L16M32D1 Features Options Marking • VDD2: 1.2V • Configuration – 4 Meg x 32 x 4 banks – 8 Meg x 16 x 4 banks • Device type – LPDDR2-S4, 1 die in package • FBGA “green” package
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512Mb:
MT42L32M16D1,
MT42L16M32D1
09005aef8467caf2
7600B
Dynamic Memory Refresh Controller
LPDDR2-1066
121ball
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Elpida LPDDR2 Memory
Abstract: MT46H32M32LF MT46H64M16LF
Text: 1Gb: x16, x32 Mobile LPDDR SDRAM Features Mobile Low-Power DDR SDRAM MT46H64M16LF – 16 Meg x 16 x 4 Banks MT46H32M32LF – 8 Meg x 32 x 4 Banks Features Options Marking • VDD/VDDQ – 1.8V/1.8V • Configuration – 64 Meg x 16 16 Meg x 16 x 4 banks
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MT46H64M16LF
MT46H32M32LF
09005aef82ce3074
Elpida LPDDR2 Memory
MT46H32M32LF
MT46H64M16LF
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Untitled
Abstract: No abstract text available
Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration
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MT47H128M8
MT47H64M16
84-ball
60-ball
DDR2-800)
DDR2-667)
09005aef85a711f4
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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OCR Scan
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PDF
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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Untitled
Abstract: No abstract text available
Text: CMBT4123 GENERAL PURPOSE TRANSISTOR N -P-N transistor Marking CMBT4123 = 5B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.09 0.48 0.38 § 3 Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR Ï 1.4 1.2 2.6 2.4 R0.1 CckhT I f<R 0 .0 5 J 1’.0 2 ]
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OCR Scan
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PDF
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CMBT4123
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