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    MARKING CODE DIODE CMPAK Search Results

    MARKING CODE DIODE CMPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING CODE DIODE CMPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking code 62z

    Abstract: philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent
    Text: 2001.05 Summary Application Example ANT The HVD141/142 features very small capacitance and on- resistance. These superior characteristics can provide isolation for the transmitting and receiving antenna switch sections and improve the insertion loss. TX RX


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    PDF HVD141/142 HZU16 HZU10 HZU18 HZU11 HZU20 HZU12 HZU22 HZU13 HZU24 marking code 62z philips surface mount zener diode v6 marking 68m sot 23-5 1S2473 equivalent DIODE ROHM 3pin Marking A7 IPS302 marking 62z SOT23 diode S4 68a 1ss81 diode equivalent 1S2473 DIODE equivalent

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


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    PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    1pw diode

    Abstract: Hitachi DSA002753
    Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • • • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) 4 V gate drive device. Small package (CMPAK)


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    PDF 2SK3289 ADE-208-743C 2SK3289 1pw diode Hitachi DSA002753

    Hitachi 2SJ

    Abstract: Hitachi DSA002752
    Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • • • Low on-resistance RDS =2.8 Ω typ. (VGS = -10 V , ID = -50 mA) RDS =5.7 Ω typ. (VGS = -4 V , ID = -50 mA) 4 V gate drive device. Small package (CMPAK)


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    PDF 2SJ576 ADE-208-741B 2SJ576 Hitachi 2SJ Hitachi DSA002752

    2SK3288

    Abstract: 2SK3378 DSA003644
    Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)


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    PDF 2SK3378 ADE-208-805 2SK3288 2SK3378 DSA003644

    2SJ575

    Abstract: 2SJ576 marking code diode CMPAK Hitachi 2SJ DSA003643
    Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)


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    PDF 2SJ576 ADE-208-741B 2SJ575 2SJ576 marking code diode CMPAK Hitachi 2SJ DSA003643

    2SK3288

    Abstract: 2SK3378 Hitachi DSA00384 DSA0038471
    Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • Low on-resistance R DS =2.7 Ω typ. (V GS = 10 V , ID = 50 mA) R DS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) • 4 V gate drive device. • Small package (CMPAK)


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    PDF 2SK3378 ADE-208-805 2SK3288 2SK3378 Hitachi DSA00384 DSA0038471

    2SJ575

    Abstract: 2SJ576 Hitachi 2SJ Hitachi DSA00397
    Text: 2SJ576 Silicon P Channel MOS FET High Speed Switching ADE-208-741B Z 3rd.Edition. June 1999 Features • Low on-resistance R DS =2.8 Ω typ. (V GS = -10 V , I D = -50 mA) R DS =5.7 Ω typ. (V GS = -4 V , ID = -50 mA) • 4 V gate drive device. • Small package (CMPAK)


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    PDF 2SJ576 ADE-208-741B 2SJ575 2SJ576 Hitachi 2SJ Hitachi DSA00397

    2SK3287

    Abstract: 2SK3289 DSA003721 DA300
    Text: 2SK3289 Silicon N Channel MOS FET High Speed Switching ADE-208-743C Z 4th.Edition. June 1999 Features • Low on-resistance R DS =1.26 Ω typ. (V GS = 10 V , ID = 150 mA) R DS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. • Small package (CMPAK)


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    PDF 2SK3289 ADE-208-743C 2SK3287 2SK3289 DSA003721 DA300

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3378 Silicon N Channel MOS FET High Speed Switching ADE-208-805 Z 1st.Edition. June 1999 Features • • • Low on-resistance RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA) 4 V gate drive device. Small package (CMPAK)


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    PDF 2SK3378 ADE-208-805 2SK3378 Hitachi DSA002753

    cmpak6

    Abstract: SMD MARKING RFC 1SV70 TBB1010 TBB1010KMTL-E
    Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0500 Rev.5.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2 Suitable for World Standard Tuner RF amplifier.


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    PDF TBB1010 REJ03G0844-0500 PTSP0006JA-A TBB1010 cmpak6 SMD MARKING RFC 1SV70 TBB1010KMTL-E

    ADE-208-1607B

    Abstract: 1607B 1SV70 TBB1010 TBB1010KMTL-E
    Text: TBB1010 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier REJ03G0844-0400 Previous ADE-208-1607B Rev.4.00 Aug.10.2005 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. High |yfs|=29mS x 2


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    PDF TBB1010 REJ03G0844-0400 ADE-208-1607B) PTSP0006JA-A TBB1010 ADE-208-1607B 1607B 1SV70 TBB1010KMTL-E

    Hitachi DSA002753

    Abstract: No abstract text available
    Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA) 2.5 V gate drive device. Small package (CMPAK)


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    PDF 2SK3348 ADE-208-772 2SK3348 Hitachi DSA002753

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet TBB1010 R07DS0316EJ0600 Previous: REJ03G0844-0500 Rev.6.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/VHF RF Amplifier Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.


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    PDF TBB1010 R07DS0316EJ0600 REJ03G0844-0500) PTSP0006JA-A TBB1010

    MOS TECHNOLOGY INC

    Abstract: 1SV70 TBB1004 TBB1004DMTL-E
    Text: TBB1004 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0842-1100 Rev.11.00 Aug 22, 2006 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.


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    PDF TBB1004 REJ03G0842-1100 200pF, PTSP0006JA-A TBB1004 MOS TECHNOLOGY INC 1SV70 TBB1004DMTL-E

    1SV70

    Abstract: TBB1005 TBB1005EMTL-E
    Text: TBB1005 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0843-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.


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    PDF TBB1005 REJ03G0843-0900 PTSP0006JA-A TBB1005 1SV70 TBB1005EMTL-E

    smd code marking BM

    Abstract: RG 56 smd diode marking BM 1SV70 TBB1002 TBB1002BMTL-E
    Text: TBB1002 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier REJ03G0841-0900 Rev.9.00 Aug 22, 2006 Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.


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    PDF TBB1002 REJ03G0841-0900 PTSP0006JA-A TBB1002 smd code marking BM RG 56 smd diode marking BM 1SV70 TBB1002BMTL-E

    2SJ586

    Abstract: Hitachi 2SJ Hitachi DSA00396
    Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 Ω typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)


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    PDF 2SJ586 ADE-208-771A 2SJ586 Hitachi 2SJ Hitachi DSA00396

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


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    PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    Hitachi 2SJ

    Abstract: Hitachi DSA002752
    Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • • • Low on-resistance RDS = 4.1 Ω typ. (VGS = -4 V , ID = -50 mA) RDS = 6.0 Ω typ. (VGS = -2.5 V , ID = -50 mA) 2.5 V gate drive device. Small package (CMPAK)


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    PDF 2SJ586 ADE-208-771A 2SJ586 Hitachi 2SJ Hitachi DSA002752

    1SV70

    Abstract: MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076 TBB1001
    Text: TBB1001 Twin Build in Biasing Circuit MOS FET IC VHF RF Amplifier ADE-208-986E Z 6th. Edition Dec. 2000 Features • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space. Suitable for World Standard Tuner RF amplifier.


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    PDF TBB1001 ADE-208-986E 200pF, TBB1001 1SV70 MARKING CODE SMD IC g1 cmpak6 SMD MARKING CODE hitachi HITACHI RF EDITION cmpak6 marking Hitachi DSA0076

    2SJ586

    Abstract: Hitachi 2SJ DSA003643
    Text: 2SJ586 Silicon P Channel MOS FET High Speed Switching ADE-208-771A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 4.1 typ. (VGS = -4 V , I D = -50 mA) R DS = 6.0 typ. (VGS = -2.5 V , ID = -50 mA) • 2.5 V gate drive device. • Small package (CMPAK)


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    PDF 2SJ586 ADE-208-771A 2SJ586 Hitachi 2SJ DSA003643

    2SK3348

    Abstract: DSA003643
    Text: 2SK3348 Silicon N Channel MOS FET High Speed Switching ADE-208-772 A Z 2nd.Edition. June 1999 Features • Low on-resistance R DS = 1.6 typ. (VGS = 4 V , ID = 50 mA) R DS = 2.2 typ. (VGS = 2.5 V , I D = 50 mA) • 2.5 V gate drive device. • Small package (CMPAK)


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    PDF 2SK3348 ADE-208-772 2SK3348 DSA003643

    PF0131

    Abstract: PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147 PF0040
    Text: FET MODULE •High frequency amplifier Package Type No. cods RF-B2 PF0Q3Q PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 RF-B3 PF0040 PF0042 RF-E PFÓ02S PF0026 PF0027 PFQ04S PF0045A PF0047A PF0049A PFÖ065 PF0065A PF0O67A PF0144 PF0145 PF0146 PF0150 PF0231


    OCR Scan
    PDF PF0031 PF0032 PF0120 PF0121 PF0130 PF0131 PF0210 PF0040 PF0042 PF0026 PF0141 PF0144 PF0145 PF0148 PFS 3000 PF0310A PF0049A PF0147